JP2024537515A5 - - Google Patents
Info
- Publication number
- JP2024537515A5 JP2024537515A5 JP2024526500A JP2024526500A JP2024537515A5 JP 2024537515 A5 JP2024537515 A5 JP 2024537515A5 JP 2024526500 A JP2024526500 A JP 2024526500A JP 2024526500 A JP2024526500 A JP 2024526500A JP 2024537515 A5 JP2024537515 A5 JP 2024537515A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma power
- plasma
- silicon nitride
- mixed material
- material laminate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202163263494P | 2021-11-03 | 2021-11-03 | |
| US63/263,494 | 2021-11-03 | ||
| PCT/US2022/079143 WO2023081703A1 (en) | 2021-11-03 | 2022-11-02 | Modification of metal-containing surfaces in high aspect ratio plasma etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2024537515A JP2024537515A (ja) | 2024-10-10 |
| JP2024537515A5 true JP2024537515A5 (https=) | 2025-10-23 |
Family
ID=86242155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024526500A Pending JP2024537515A (ja) | 2021-11-03 | 2022-11-02 | 高アスペクト比プラズマエッチングにおける金属含有表面の修正 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20240420963A1 (https=) |
| JP (1) | JP2024537515A (https=) |
| KR (1) | KR20240091325A (https=) |
| CN (1) | CN118202449A (https=) |
| TW (1) | TW202335032A (https=) |
| WO (1) | WO2023081703A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20220161452A (ko) | 2020-03-31 | 2022-12-06 | 램 리써치 코포레이션 | 염소 (chlorine) 를 사용한 고 종횡비 유전체 에칭 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6339963B2 (ja) * | 2015-04-06 | 2018-06-06 | 東京エレクトロン株式会社 | エッチング方法 |
| KR101998943B1 (ko) * | 2016-01-20 | 2019-07-10 | 도쿄엘렉트론가부시키가이샤 | 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조 |
| CN118588548A (zh) * | 2018-03-16 | 2024-09-03 | 朗姆研究公司 | 在电介质中的高深宽比特征的等离子体蚀刻化学过程 |
| JP6846387B2 (ja) * | 2018-06-22 | 2021-03-24 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US10515821B1 (en) * | 2018-06-26 | 2019-12-24 | Lam Research Corporation | Method of achieving high selectivity for high aspect ratio dielectric etch |
| US10741407B2 (en) * | 2018-10-19 | 2020-08-11 | Lam Research Corporation | Reduction of sidewall notching for high aspect ratio 3D NAND etch |
-
2022
- 2022-11-02 JP JP2024526500A patent/JP2024537515A/ja active Pending
- 2022-11-02 TW TW111141762A patent/TW202335032A/zh unknown
- 2022-11-02 WO PCT/US2022/079143 patent/WO2023081703A1/en not_active Ceased
- 2022-11-02 CN CN202280073754.2A patent/CN118202449A/zh active Pending
- 2022-11-02 KR KR1020247018507A patent/KR20240091325A/ko active Pending
- 2022-11-02 US US18/705,932 patent/US20240420963A1/en active Pending
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