CN118202449A - 高深宽比等离子体蚀刻中的含金属表面的改性 - Google Patents

高深宽比等离子体蚀刻中的含金属表面的改性 Download PDF

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Publication number
CN118202449A
CN118202449A CN202280073754.2A CN202280073754A CN118202449A CN 118202449 A CN118202449 A CN 118202449A CN 202280073754 A CN202280073754 A CN 202280073754A CN 118202449 A CN118202449 A CN 118202449A
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CN
China
Prior art keywords
gas
plasma
metal
material stack
hybrid material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202280073754.2A
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English (en)
Chinese (zh)
Inventor
张贺
李辰
凯文·赖
尼尔·马卡雷格·麦基
许东浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN118202449A publication Critical patent/CN118202449A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
CN202280073754.2A 2021-11-03 2022-11-02 高深宽比等离子体蚀刻中的含金属表面的改性 Pending CN118202449A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163263494P 2021-11-03 2021-11-03
US63/263,494 2021-11-03
PCT/US2022/079143 WO2023081703A1 (en) 2021-11-03 2022-11-02 Modification of metal-containing surfaces in high aspect ratio plasma etching

Publications (1)

Publication Number Publication Date
CN118202449A true CN118202449A (zh) 2024-06-14

Family

ID=86242155

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202280073754.2A Pending CN118202449A (zh) 2021-11-03 2022-11-02 高深宽比等离子体蚀刻中的含金属表面的改性

Country Status (6)

Country Link
US (1) US20240420963A1 (https=)
JP (1) JP2024537515A (https=)
KR (1) KR20240091325A (https=)
CN (1) CN118202449A (https=)
TW (1) TW202335032A (https=)
WO (1) WO2023081703A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220161452A (ko) 2020-03-31 2022-12-06 램 리써치 코포레이션 염소 (chlorine) 를 사용한 고 종횡비 유전체 에칭

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6339963B2 (ja) * 2015-04-06 2018-06-06 東京エレクトロン株式会社 エッチング方法
KR101998943B1 (ko) * 2016-01-20 2019-07-10 도쿄엘렉트론가부시키가이샤 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조
CN118588548A (zh) * 2018-03-16 2024-09-03 朗姆研究公司 在电介质中的高深宽比特征的等离子体蚀刻化学过程
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10515821B1 (en) * 2018-06-26 2019-12-24 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US10741407B2 (en) * 2018-10-19 2020-08-11 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3D NAND etch

Also Published As

Publication number Publication date
KR20240091325A (ko) 2024-06-21
WO2023081703A1 (en) 2023-05-11
US20240420963A1 (en) 2024-12-19
TW202335032A (zh) 2023-09-01
JP2024537515A (ja) 2024-10-10

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