JP2024537515A - 高アスペクト比プラズマエッチングにおける金属含有表面の修正 - Google Patents

高アスペクト比プラズマエッチングにおける金属含有表面の修正 Download PDF

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Publication number
JP2024537515A
JP2024537515A JP2024526500A JP2024526500A JP2024537515A JP 2024537515 A JP2024537515 A JP 2024537515A JP 2024526500 A JP2024526500 A JP 2024526500A JP 2024526500 A JP2024526500 A JP 2024526500A JP 2024537515 A JP2024537515 A JP 2024537515A
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JP
Japan
Prior art keywords
plasma
gas
mixed material
metal
material stack
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Pending
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JP2024526500A
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English (en)
Japanese (ja)
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JP2024537515A5 (https=
Inventor
チャン・ヒー
リー・チェン
レイ・ケヴィン
マッキー・ニール・マカラエグ
ヘオ・ドンホ
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Lam Research Corp
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Lam Research Corp
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Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of JP2024537515A publication Critical patent/JP2024537515A/ja
Publication of JP2024537515A5 publication Critical patent/JP2024537515A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP2024526500A 2021-11-03 2022-11-02 高アスペクト比プラズマエッチングにおける金属含有表面の修正 Pending JP2024537515A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202163263494P 2021-11-03 2021-11-03
US63/263,494 2021-11-03
PCT/US2022/079143 WO2023081703A1 (en) 2021-11-03 2022-11-02 Modification of metal-containing surfaces in high aspect ratio plasma etching

Publications (2)

Publication Number Publication Date
JP2024537515A true JP2024537515A (ja) 2024-10-10
JP2024537515A5 JP2024537515A5 (https=) 2025-10-23

Family

ID=86242155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024526500A Pending JP2024537515A (ja) 2021-11-03 2022-11-02 高アスペクト比プラズマエッチングにおける金属含有表面の修正

Country Status (6)

Country Link
US (1) US20240420963A1 (https=)
JP (1) JP2024537515A (https=)
KR (1) KR20240091325A (https=)
CN (1) CN118202449A (https=)
TW (1) TW202335032A (https=)
WO (1) WO2023081703A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20220161452A (ko) 2020-03-31 2022-12-06 램 리써치 코포레이션 염소 (chlorine) 를 사용한 고 종횡비 유전체 에칭

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6339963B2 (ja) * 2015-04-06 2018-06-06 東京エレクトロン株式会社 エッチング方法
KR101998943B1 (ko) * 2016-01-20 2019-07-10 도쿄엘렉트론가부시키가이샤 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조
CN118588548A (zh) * 2018-03-16 2024-09-03 朗姆研究公司 在电介质中的高深宽比特征的等离子体蚀刻化学过程
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10515821B1 (en) * 2018-06-26 2019-12-24 Lam Research Corporation Method of achieving high selectivity for high aspect ratio dielectric etch
US10741407B2 (en) * 2018-10-19 2020-08-11 Lam Research Corporation Reduction of sidewall notching for high aspect ratio 3D NAND etch

Also Published As

Publication number Publication date
KR20240091325A (ko) 2024-06-21
WO2023081703A1 (en) 2023-05-11
US20240420963A1 (en) 2024-12-19
TW202335032A (zh) 2023-09-01
CN118202449A (zh) 2024-06-14

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