JP2024517612A - 直接描画応力膜を用いたウェーハの反り修正方法 - Google Patents

直接描画応力膜を用いたウェーハの反り修正方法 Download PDF

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Publication number
JP2024517612A
JP2024517612A JP2023562960A JP2023562960A JP2024517612A JP 2024517612 A JP2024517612 A JP 2024517612A JP 2023562960 A JP2023562960 A JP 2023562960A JP 2023562960 A JP2023562960 A JP 2023562960A JP 2024517612 A JP2024517612 A JP 2024517612A
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JP
Japan
Prior art keywords
stress
film
adjusting
wafer
stress film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023562960A
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English (en)
Japanese (ja)
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JP2024517612A5 (https=
Inventor
カトラー，シャーロット
マーフィー，マイケル
コンクリン，デヴィッド
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Original Assignee
Tokyo Electron Ltd
Tokyo Electron US Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron US Holdings Inc filed Critical Tokyo Electron Ltd
Publication of JP2024517612A publication Critical patent/JP2024517612A/ja
Publication of JP2024517612A5 publication Critical patent/JP2024517612A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023562960A 2021-04-15 2022-03-30 直接描画応力膜を用いたウェーハの反り修正方法 Pending JP2024517612A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US202163175123P 2021-04-15 2021-04-15
US63/175,123 2021-04-15
US17/703,072 2022-03-24
US17/703,072 US20220336226A1 (en) 2021-04-15 2022-03-24 Method of correcting wafer bow using a direct write stress film
PCT/US2022/022529 WO2022221060A1 (en) 2021-04-15 2022-03-30 Method of correcting wafer bow using a direct write stress film

Publications (2)

Publication Number Publication Date
JP2024517612A true JP2024517612A (ja) 2024-04-23
JP2024517612A5 JP2024517612A5 (https=) 2025-04-04

Family

ID=83602562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023562960A Pending JP2024517612A (ja) 2021-04-15 2022-03-30 直接描画応力膜を用いたウェーハの反り修正方法

Country Status (6)

Country Link
US (1) US20220336226A1 (https=)
JP (1) JP2024517612A (https=)
KR (1) KR20230170006A (https=)
CN (1) CN117321735A (https=)
TW (1) TW202305956A (https=)
WO (1) WO2022221060A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12455511B2 (en) * 2022-02-04 2025-10-28 Tokyo Electron Limited In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones
CN117275356B (zh) * 2023-11-23 2024-04-12 荣耀终端有限公司 柔性显示屏、电子设备及电子设备组件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230341A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体装置
JP2005158929A (ja) * 2003-11-25 2005-06-16 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
WO2006054637A1 (ja) * 2004-11-18 2006-05-26 Matsushita Electric Industrial Co., Ltd. 配線基板とその製造方法および半導体装置
JP2018041080A (ja) * 2016-09-05 2018-03-15 東京エレクトロン株式会社 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7282324B2 (en) * 2004-01-05 2007-10-16 Microchem Corp. Photoresist compositions, hardened forms thereof, hardened patterns thereof and metal patterns formed using them
JP2011201759A (ja) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法
JP6047422B2 (ja) * 2013-02-21 2016-12-21 富士フイルム株式会社 感光性組成物、光硬化性組成物、化学増幅型レジスト組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
KR101913020B1 (ko) * 2014-03-25 2018-10-29 칼 짜이스 에스엠에스 엘티디 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치
US10409163B2 (en) * 2014-09-30 2019-09-10 Toray Industries, Inc. Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device
US10975263B2 (en) * 2016-04-25 2021-04-13 Kaneka Corporation Thermosetting resin composition, cured film and method for producing same, and flexible printed board with cured film and method for producing same
JP2020047617A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 基板処理装置、半導体装置の製造方法、および被加工基板
WO2020073218A1 (en) * 2018-10-10 2020-04-16 Applied Materials, Inc. Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation
JP6867522B2 (ja) * 2020-01-21 2021-04-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230341A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体装置
JP2005158929A (ja) * 2003-11-25 2005-06-16 Shinko Electric Ind Co Ltd 半導体装置及びその製造方法
WO2006054637A1 (ja) * 2004-11-18 2006-05-26 Matsushita Electric Industrial Co., Ltd. 配線基板とその製造方法および半導体装置
JP2018041080A (ja) * 2016-09-05 2018-03-15 東京エレクトロン株式会社 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング

Also Published As

Publication number Publication date
WO2022221060A1 (en) 2022-10-20
CN117321735A (zh) 2023-12-29
KR20230170006A (ko) 2023-12-18
TW202305956A (zh) 2023-02-01
US20220336226A1 (en) 2022-10-20

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