TW202305956A - 使用直寫式應力膜校正晶圓翹曲的方法 - Google Patents

使用直寫式應力膜校正晶圓翹曲的方法 Download PDF

Info

Publication number
TW202305956A
TW202305956A TW111113586A TW111113586A TW202305956A TW 202305956 A TW202305956 A TW 202305956A TW 111113586 A TW111113586 A TW 111113586A TW 111113586 A TW111113586 A TW 111113586A TW 202305956 A TW202305956 A TW 202305956A
Authority
TW
Taiwan
Prior art keywords
stress
bend
film
wafer
actinic radiation
Prior art date
Application number
TW111113586A
Other languages
English (en)
Chinese (zh)
Inventor
夏洛特 卡特勒
邁克爾 墨菲
大衛 康克林
Original Assignee
日商東京威力科創股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商東京威力科創股份有限公司 filed Critical 日商東京威力科創股份有限公司
Publication of TW202305956A publication Critical patent/TW202305956A/zh

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H10P95/906—Thermal treatments, e.g. annealing or sintering for altering the shape of semiconductors, e.g. smoothing the surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/08—Planarisation of organic insulating materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Formation Of Insulating Films (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW111113586A 2021-04-15 2022-04-11 使用直寫式應力膜校正晶圓翹曲的方法 TW202305956A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US202163175123P 2021-04-15 2021-04-15
US63/175,123 2021-04-15
US17/703,072 2022-03-24
US17/703,072 US20220336226A1 (en) 2021-04-15 2022-03-24 Method of correcting wafer bow using a direct write stress film

Publications (1)

Publication Number Publication Date
TW202305956A true TW202305956A (zh) 2023-02-01

Family

ID=83602562

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111113586A TW202305956A (zh) 2021-04-15 2022-04-11 使用直寫式應力膜校正晶圓翹曲的方法

Country Status (6)

Country Link
US (1) US20220336226A1 (https=)
JP (1) JP2024517612A (https=)
KR (1) KR20230170006A (https=)
CN (1) CN117321735A (https=)
TW (1) TW202305956A (https=)
WO (1) WO2022221060A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117275356A (zh) * 2023-11-23 2023-12-22 荣耀终端有限公司 柔性显示屏、电子设备及电子设备组件

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12455511B2 (en) * 2022-02-04 2025-10-28 Tokyo Electron Limited In-situ lithography pattern enhancement with localized stress treatment tuning using heat zones

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230341A (ja) * 2000-02-18 2001-08-24 Hitachi Ltd 半導体装置
JP3929966B2 (ja) * 2003-11-25 2007-06-13 新光電気工業株式会社 半導体装置及びその製造方法
US7282324B2 (en) * 2004-01-05 2007-10-16 Microchem Corp. Photoresist compositions, hardened forms thereof, hardened patterns thereof and metal patterns formed using them
TW200638812A (en) * 2004-11-18 2006-11-01 Matsushita Electric Industrial Co Ltd Wiring board, method for manufacturing same and semiconductor device
JP2011201759A (ja) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法
JP6047422B2 (ja) * 2013-02-21 2016-12-21 富士フイルム株式会社 感光性組成物、光硬化性組成物、化学増幅型レジスト組成物、レジスト膜、パターン形成方法、及び電子デバイスの製造方法
US9397051B2 (en) * 2013-12-03 2016-07-19 Invensas Corporation Warpage reduction in structures with electrical circuitry
KR101913020B1 (ko) * 2014-03-25 2018-10-29 칼 짜이스 에스엠에스 엘티디 광학 부품 및/또는 웨이퍼의 미리 정해진 3차원 윤곽을 생성하는 방법 및 장치
US10409163B2 (en) * 2014-09-30 2019-09-10 Toray Industries, Inc. Photosensitive resin composition, cured film, element provided with cured film, and method for manufacturing semiconductor device
US10975263B2 (en) * 2016-04-25 2021-04-13 Kaneka Corporation Thermosetting resin composition, cured film and method for producing same, and flexible printed board with cured film and method for producing same
JP7164289B2 (ja) * 2016-09-05 2022-11-01 東京エレクトロン株式会社 半導体プロセッシング中のオーバレイを制御するための湾曲を制御する応力の位置特定チューニング
JP2020047617A (ja) * 2018-09-14 2020-03-26 キオクシア株式会社 基板処理装置、半導体装置の製造方法、および被加工基板
WO2020073218A1 (en) * 2018-10-10 2020-04-16 Applied Materials, Inc. Techniques and apparatus for anisotropic stress compensation in substrates using ion implantation
JP6867522B2 (ja) * 2020-01-21 2021-04-28 デクセリアルズ株式会社 熱硬化性接着シート、及び半導体装置の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117275356A (zh) * 2023-11-23 2023-12-22 荣耀终端有限公司 柔性显示屏、电子设备及电子设备组件
CN117275356B (zh) * 2023-11-23 2024-04-12 荣耀终端有限公司 柔性显示屏、电子设备及电子设备组件

Also Published As

Publication number Publication date
JP2024517612A (ja) 2024-04-23
WO2022221060A1 (en) 2022-10-20
CN117321735A (zh) 2023-12-29
KR20230170006A (ko) 2023-12-18
US20220336226A1 (en) 2022-10-20

Similar Documents

Publication Publication Date Title
US10811265B2 (en) Location-specific tuning of stress to control bow to control overlay in semiconductor processing
US8940475B2 (en) Double patterning with inline critical dimension slimming
US20200257203A1 (en) Semiconductor Method of Protecting Wafer from Bevel Contamination
TWI862635B (zh) 在基板上調整膜應力變遷的方法
TW202305956A (zh) 使用直寫式應力膜校正晶圓翹曲的方法
US12001147B2 (en) Precision multi-axis photolithography alignment correction using stressor film
TW202020574A (zh) 基板處理方法及基板處理系統
JP6942487B2 (ja) インプリント装置、インプリント方法、および物品製造方法
KR102767600B1 (ko) 교정된 조정 선량을 사용하여 임계 치수를 보정하기 위한 방법
CN119270591A (zh) 一种深台面结构侧壁光滑成型的厚胶光刻方法
TWI238456B (en) Composite layer method for minimizing PED effect
US12381118B2 (en) 3D multiple location compressing bonded arm for advanced integration
US20250021006A1 (en) Wafer Bow Mitigation
US20240363340A1 (en) Inorganic/hybrid stress films
KR20050091255A (ko) 독립형 시스템을 채택하는 포토리쏘그라피 장비 및 이를사용하는 사진공정
JP2023163641A (ja) 基板処理方法、コンピュータ記憶媒体及び基板処理装置
KR20080109569A (ko) 포토마스크 제조방법
JPH10172892A (ja) 半導体装置の製造方法
KR20070044307A (ko) 반도체 소자 제조용 장비 제어 방법