JP2024516123A - システムオンチップ（ｓｏｃ）上の複数の機能ブロック - Google Patents

システムオンチップ（ｓｏｃ）上の複数の機能ブロック Download PDF

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Publication number
JP2024516123A
JP2024516123A JP2023562285A JP2023562285A JP2024516123A JP 2024516123 A JP2024516123 A JP 2024516123A JP 2023562285 A JP2023562285 A JP 2023562285A JP 2023562285 A JP2023562285 A JP 2023562285A JP 2024516123 A JP2024516123 A JP 2024516123A
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Japan
Prior art keywords
connections
dielectric layer
metal layer
different
functional block
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JP2023562285A
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English (en)
Japanese (ja)
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JP2024516123A5 (enExample
Inventor
ジョン・ジエンホン・ズ
ジュンジン・バオ
ギリダール・ナラパティ
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クアルコム，インコーポレイテッド
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Publication of JP2024516123A publication Critical patent/JP2024516123A/ja
Publication of JP2024516123A5 publication Critical patent/JP2024516123A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/42—Vias, e.g. via plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/611—Insulating or insulated package substrates; Interposers; Redistribution layers for connecting multiple chips together

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2023562285A 2021-04-19 2022-03-24 システムオンチップ（ｓｏｃ）上の複数の機能ブロック Pending JP2024516123A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/234,377 2021-04-19
US17/234,377 US20220336351A1 (en) 2021-04-19 2021-04-19 Multiple function blocks on a system on a chip (soc)
PCT/US2022/071320 WO2022226458A1 (en) 2021-04-19 2022-03-24 Multiple function blocks on a system on a chip (soc)

Publications (2)

Publication Number Publication Date
JP2024516123A true JP2024516123A (ja) 2024-04-12
JP2024516123A5 JP2024516123A5 (enExample) 2025-03-19

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JP2023562285A Pending JP2024516123A (ja) 2021-04-19 2022-03-24 システムオンチップ（ｓｏｃ）上の複数の機能ブロック

Country Status (7)

Country Link
US (1) US20220336351A1 (enExample)
EP (1) EP4327356A1 (enExample)
JP (1) JP2024516123A (enExample)
KR (1) KR20230173662A (enExample)
CN (1) CN117157745A (enExample)
BR (1) BR112023020878A2 (enExample)
WO (1) WO2022226458A1 (enExample)

Families Citing this family (3)

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Publication number Priority date Publication date Assignee Title
US20230031274A1 (en) * 2021-07-28 2023-02-02 Nanya Technology Corporation Semiconductor device structure with conductive contacts of different widths and method for preparing the same
CN115706081A (zh) * 2021-08-16 2023-02-17 联华电子股份有限公司 半导体结构及其制作方法
US20250349711A1 (en) * 2024-05-09 2025-11-13 International Business Machines Corporation Resistance and capacitance tuning in beol regions

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2011171705A (ja) * 2010-01-19 2011-09-01 Panasonic Corp 半導体装置及びその製造方法

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JP2000188332A (ja) * 1998-12-22 2000-07-04 Seiko Epson Corp 半導体装置及びその製造方法
KR100463895B1 (ko) * 2002-12-31 2004-12-30 엘지.필립스 엘시디 주식회사 콘택홀 형성방법
DE102005041283B4 (de) * 2005-08-31 2017-12-14 Globalfoundries Inc. Verfahren und Halbleiterstruktur zur Überwachung der Herstellung von Verbindungsstrukturen und Kontakten in einem Halbleiterbauelement
DE102008016431B4 (de) * 2008-03-31 2010-06-02 Advanced Micro Devices, Inc., Sunnyvale Metalldeckschicht mit erhöhtem Elektrodenpotential für kupferbasierte Metallgebiete in Halbleiterbauelementen sowie Verfahren zu ihrer Herstellung
WO2012098759A1 (ja) * 2011-01-17 2012-07-26 住友電気工業株式会社 炭化珪素半導体装置の製造方法
KR101883379B1 (ko) * 2012-06-08 2018-07-30 삼성전자주식회사 반도체 장치
US9293412B2 (en) * 2012-12-17 2016-03-22 International Business Machines Corporation Graphene and metal interconnects with reduced contact resistance
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US9070644B2 (en) * 2013-03-15 2015-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging mechanisms for dies with different sizes of connectors
US9105636B2 (en) * 2013-08-26 2015-08-11 Micron Technology, Inc. Semiconductor constructions and methods of forming electrically conductive contacts
US9564361B2 (en) * 2013-09-13 2017-02-07 Qualcomm Incorporated Reverse self aligned double patterning process for back end of line fabrication of a semiconductor device
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US10541205B1 (en) * 2017-02-14 2020-01-21 Intel Corporation Manufacture of interconnects for integration of multiple integrated circuits
US10381305B2 (en) * 2017-08-29 2019-08-13 Micron Technology, Inc. Integrated assemblies having structures along a first pitch coupled with structures along a second pitch different from the first pitch, and methods of forming integrated assemblies
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Also Published As

Publication number Publication date
WO2022226458A1 (en) 2022-10-27
BR112023020878A2 (pt) 2023-12-12
US20220336351A1 (en) 2022-10-20
CN117157745A (zh) 2023-12-01
EP4327356A1 (en) 2024-02-28
TW202245213A (zh) 2022-11-16
KR20230173662A (ko) 2023-12-27

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