JP2024048269A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP2024048269A
JP2024048269A JP2022154209A JP2022154209A JP2024048269A JP 2024048269 A JP2024048269 A JP 2024048269A JP 2022154209 A JP2022154209 A JP 2022154209A JP 2022154209 A JP2022154209 A JP 2022154209A JP 2024048269 A JP2024048269 A JP 2024048269A
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Japan
Prior art keywords
oxide semiconductor
film
semiconductor layer
semiconductor device
oxide
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Pending
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JP2022154209A
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English (en)
Japanese (ja)
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JP2024048269A5 (https=
Inventor
創 渡壁
So Watakabe
将志 津吹
Masashi Tsubuki
俊成 佐々木
Toshinari Sasaki
尊也 田丸
Takaya Tamaru
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Japan Display Inc
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Japan Display Inc
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Publication date
Application filed by Japan Display Inc filed Critical Japan Display Inc
Priority to JP2022154209A priority Critical patent/JP2024048269A/ja
Priority to TW112133415A priority patent/TWI865007B/zh
Priority to KR1020230124710A priority patent/KR102733354B1/ko
Priority to US18/474,389 priority patent/US20240105819A1/en
Priority to CN202311249308.5A priority patent/CN117790311A/zh
Publication of JP2024048269A publication Critical patent/JP2024048269A/ja
Publication of JP2024048269A5 publication Critical patent/JP2024048269A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3426—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3454—Amorphous

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  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
JP2022154209A 2022-09-27 2022-09-27 半導体装置の製造方法 Pending JP2024048269A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2022154209A JP2024048269A (ja) 2022-09-27 2022-09-27 半導体装置の製造方法
TW112133415A TWI865007B (zh) 2022-09-27 2023-09-04 半導體裝置之製造方法
KR1020230124710A KR102733354B1 (ko) 2022-09-27 2023-09-19 반도체 장치의 제조 방법
US18/474,389 US20240105819A1 (en) 2022-09-27 2023-09-26 Method for manufacturing semiconductor device
CN202311249308.5A CN117790311A (zh) 2022-09-27 2023-09-26 半导体器件的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2022154209A JP2024048269A (ja) 2022-09-27 2022-09-27 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2024048269A true JP2024048269A (ja) 2024-04-08
JP2024048269A5 JP2024048269A5 (https=) 2025-09-22

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JP2022154209A Pending JP2024048269A (ja) 2022-09-27 2022-09-27 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US20240105819A1 (https=)
JP (1) JP2024048269A (https=)
KR (1) KR102733354B1 (https=)
CN (1) CN117790311A (https=)
TW (1) TWI865007B (https=)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871565B2 (en) 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102113160B1 (ko) * 2012-06-15 2020-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG11201505225TA (en) 2012-08-03 2015-08-28 Semiconductor Energy Lab Oxide semiconductor stacked film and semiconductor device
TWI761605B (zh) 2012-09-14 2022-04-21 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
US9190527B2 (en) * 2013-02-13 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of semiconductor device
US10304859B2 (en) * 2013-04-12 2019-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide film on an oxide semiconductor film
US9425217B2 (en) 2013-09-23 2016-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6283273B2 (ja) * 2014-07-01 2018-02-21 株式会社神戸製鋼所 薄膜トランジスタ評価用の積層構造体の評価方法
KR20180010205A (ko) * 2015-05-22 2018-01-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 상기 반도체 장치를 포함하는 표시 장치
KR102527306B1 (ko) * 2016-01-18 2023-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물막, 반도체 장치, 및 표시 장치
WO2017137869A1 (en) 2016-02-12 2017-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the semiconductor device
US11328911B2 (en) * 2016-06-17 2022-05-10 Idemitsu Kosan Co., Ltd. Oxide sintered body and sputtering target
US10923350B2 (en) * 2016-08-31 2021-02-16 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP7263013B2 (ja) * 2019-01-10 2023-04-24 株式会社ジャパンディスプレイ 配線構造体、半導体装置、及び表示装置
JP7516342B2 (ja) * 2019-02-26 2024-07-16 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及びテレビジョン装置
KR102760217B1 (ko) * 2020-06-26 2025-01-31 삼성디스플레이 주식회사 박막트랜지스터 기판 및 이를 구비한 디스플레이 장치
KR20220094735A (ko) * 2020-12-29 2022-07-06 에이디알씨 주식회사 결정성 산화물 반도체 박막 및 그 형성 방법, 박막 트랜지스터 및 그 제조 방법, 표시 패널 및 전자 장치

Also Published As

Publication number Publication date
TWI865007B (zh) 2024-12-01
US20240105819A1 (en) 2024-03-28
CN117790311A (zh) 2024-03-29
KR20240043693A (ko) 2024-04-03
KR102733354B1 (ko) 2024-11-25
TW202414609A (zh) 2024-04-01

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