JP2024032827A - Thermal print head and manufacturing method for the same - Google Patents

Abstract

To provide a thermal print head in which a heat accumulation part that is arranged below a heat generation part can be simply formed.SOLUTION: The thermal print head includes a substrate 1 having a main surface 11, a heat accumulation layer 15 formed on the main surface 11 of the substrate 1, and a plurality of heat generation parts 41 arranged in a main scanning direction on an upper layer of the heat accumulation layer 15. The substrate 1 is formed of an Si wafer. Each of the heat generation parts 41 is formed to include a resistor layer 4 and an upstream-side electrode layer 31 and a downstream-side electrode layer 32 laminated on the resistor layer 4 to expose a portion of the resistor layer 4, between which electricity can be distributed. The resistor layer 4 is made from TaN, and the heat accumulation layer 15 is formed by attaching a plate-like heat accumulation member 150 to the main surface 11 of the substrate 1.SELECTED DRAWING: Figure 6

Description

The present invention relates to a thermal print head and a method for manufacturing the same.

Patent Document 1 discloses an example of a thermal print head. A thermal print head generally includes a large number of heat generating parts arranged in the main scanning direction on a head substrate. Each heat generating section is formed by laminating an upstream electrode layer and a downstream electrode layer with their ends facing each other on a resistor layer formed on the head substrate through a heat storage section, with a portion of the resistor layer exposed. It is formed by By passing current between the upstream electrode layer and the downstream electrode layer, the exposed portion (heat generating portion) of the resistor layer generates heat due to Joule heat. The heat storage section is provided for the purpose of suppressing wasteful leakage of heat generated by the heat generating section to the head substrate, etc., and enabling high-speed printing.

The thermal print head disclosed in this document also uses Si as a substrate, and each component including the resistor layer is formed by a semiconductor process. In this case, the heat storage part is formed by sputtering or CVD using SiO ₂ , but it takes a considerable amount of time to form a heat storage part of sufficient thickness, which causes a problem in that the manufacturing efficiency of the thermal print head deteriorates. There is.

JP 2017-7203 Publication

The present invention was conceived under the above circumstances, and an object of the present invention is to provide a thermal print head in which a heat storage section provided below a heat generating section can be easily formed.

In order to solve the above problems, the present invention employs the following technical means.

The thermal print head provided by the first aspect of the present invention includes a substrate having a main surface, a heat storage layer formed on the main surface of the substrate, and a heat storage layer arranged on the top layer of the heat storage layer in the main scanning direction. the substrate is made of a Si wafer, and each of the heat generating parts includes a resistor layer and a plurality of heat generating parts laminated on the resistor layer so as to expose a part of the resistor layer. The resistor layer is made of TaN, and the heat storage layer includes a plate-like heat storage layer on the main surface of the substrate. It is characterized by being formed by pasting members.

In a preferred embodiment, the plate-shaped heat storage member is made of _SiO2 .

In a preferred embodiment, the plate-shaped heat storage member has a thickness of 30 to 50 μm.

In a preferred embodiment, the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate.

The thermal print head provided by the first aspect of the present invention also includes a substrate having a recess extending in the main scanning direction on a main surface, and a substrate formed on the main surface of the substrate to cover the recess. The substrate includes a heat storage layer, and a plurality of heat generating parts arranged in the main scanning direction as an upper layer of the heat storage layer and located above the recessed part, the substrate is made of a Si wafer, and the heat generating parts are Each is formed to include a resistor layer, and an upstream electrode layer and a downstream electrode layer that are laminated on the resistor layer so as to expose a part of the resistor layer, and are capable of conducting electricity between them. The resistor layer is made of TaN, and the heat storage layer is formed by adhering a plate-shaped heat storage member to the main surface of the substrate.

In a preferred embodiment, the plate-shaped heat storage member is made of _SiO2 .

In a preferred embodiment, the plate-shaped heat storage member has a thickness of 30 to 50 μm.

In a preferred embodiment, the depth of the recess is 10 to 100 μm.

In a preferred embodiment, the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate.

A method for manufacturing a thermal print head provided by a second aspect of the present invention includes: a substrate having a main surface; a heat storage layer formed on the main surface of the substrate; the substrate is made of a Si wafer, and each of the heat generating parts includes a resistor layer and a plurality of heat generating parts arranged on the resistor layer so as to expose a part of the resistor layer. The resistor layer is made of TaN, and the heat storage layer is formed by forming a plate on the main surface of the substrate. A method of manufacturing a thermal print head formed by pasting a plate-like heat storage member, wherein the heat storage layer is formed by pasting a plate-like heat storage member on the main surface of a material substrate made of a Si wafer. It is characterized by

In a preferred embodiment, the plate-shaped heat storage member is made of _SiO2 .

In a preferred embodiment, the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate material by anodic bonding.

A method for manufacturing a thermal print head provided by a second aspect of the present invention also includes a substrate having a recess extending in the main scanning direction on a main surface, and a method for manufacturing a thermal print head such that the main surface of the substrate covers the recess. a formed heat storage layer; and a plurality of heat generating parts arranged in the main scanning direction and arranged in the main scanning direction as an upper layer of the heat storage layer, and the substrate is made of a Si wafer; Each of the heat generating parts includes a resistor layer, and an upstream electrode layer and a downstream electrode layer that are laminated on the resistor layer so as to expose a part of the resistor layer, and are capable of conducting electricity between them. The method for manufacturing a thermal print head is characterized in that the resistor layer is made of TaN, and the heat storage layer is formed by pasting a plate-shaped heat storage member on the main surface of the substrate. The heat storage layer is characterized in that it is formed by adhering a plate-shaped heat storage member to the main surface of a material substrate made of a Si wafer.

The plate-shaped heat storage member is made of SiO ₂ .

In a preferred embodiment, the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate material by anodic bonding.

Other features and advantages of the invention will become more apparent from the detailed description given below with reference to the accompanying drawings.

FIG. 1 is a plan view showing a thermal print head according to a first embodiment of the present invention. FIG. 1 is a plan view of essential parts of a thermal print head according to a first embodiment of the present invention. FIG. 1 is an enlarged plan view of a main part of a thermal print head according to a first embodiment of the present invention. 2 is a cross-sectional view taken along line IV-IV in FIG. 1. FIG. FIG. 1 is a sectional view of a main part of a thermal print head according to a first embodiment of the present invention. FIG. 1 is an enlarged sectional view of a main part of a thermal print head according to a first embodiment of the present invention. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention. 1 is a cross-sectional view of main parts showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention; FIG. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention. 1 is a cross-sectional view of a main part showing an example of a method for manufacturing a thermal print head according to a first embodiment of the present invention. FIG. 2 is a sectional view of a main part of a thermal print head according to a second embodiment of the present invention. FIG. 2 is an enlarged cross-sectional view of a main part of a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention. FIG. 7 is a cross-sectional view of essential parts showing an example of a method for manufacturing a thermal print head according to a second embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.

1 to 6 show a thermal print head according to a first embodiment of the present invention. This thermal print head A1 has a head substrate 1, a connection substrate 5, and a heat dissipation member 8. The head substrate 1 and the connection substrate 5 are mounted on the heat dissipation member 8 adjacent to each other in the sub-scanning direction y. A plurality of heat generating parts 41 arranged in the main scanning direction x are formed on the head substrate 1 according to a configuration that will be explained in detail later. The heat generating part 41 is selectively driven to generate heat by the driver IC 7 mounted on the connection board 5, and is pressed against the heat generating part 41 by the platen roller 91 in accordance with a print signal transmitted from the outside via the connector 59. Prints on print media such as thermal paper.

The head substrate 1 has an elongated rectangular planar shape with the main scanning direction x as the longitudinal direction and the sub-scanning direction y as the lateral direction. The size of the head substrate 1 is not limited, but to give an example, the dimension in the main scanning direction x is, for example, 50 to 150 mm, the dimension in the sub scanning direction y is, for example, 2.0 to 5.0 mm, and the dimension in the thickness direction z. The dimension is, for example, 725 μm. In the following description, the side of the head substrate 1 that is closer to the driver IC 7 in the sub-scanning direction y will be referred to as the upstream side, and the side that is farther from the driver IC 7 will be referred to as the downstream side.

The head substrate 1 of this embodiment is made of, for example, a single crystal semiconductor. Si is suitable as the single crystal semiconductor.

As shown in FIGS. 5 and 6, a heat storage layer 15 is formed on the main surface 11 of the head substrate 1. As shown in FIGS. This heat storage layer 15 is formed by adhering a plate-shaped heat storage member 150 made of, for example, SiO ₂ to the main surface 11 . According to the manufacturing method described later, this heat storage layer 15 is made by bonding an SiO ₂ wafer to a Si wafer, for example, by anodic bonding, and polishing it to obtain the required thickness. The thickness of the heat storage layer 15 thus formed can be set to a sufficient thickness of, for example, 30 to 50 μm. Further, in this embodiment, the heat storage layer 15 is formed over the entire main surface 11 of the head substrate 1.

On the upper layer of the heat storage layer 15, at least a resistor layer 4, an electrode layer 3, and a protective layer 2 are formed in this order.

The resistor layer 4 is formed above the heat storage layer 15. A portion of the resistor layer 4 that is not covered with the electrode layer 3 (described later) and is exposed forms a heat generating portion 41 . A large number of the heat generating parts 41 are arranged in the main scanning direction x. The resistor layer 4 is made of TaN, for example, and its thickness is not particularly limited, and is, for example, 0.02 μm to 0.1 μm. The resistor layer 4 has a predetermined width in the sub-scanning direction y, and is formed separately in the main-scanning direction x to make each heat generating part 41 independent in the main-scanning direction x.

The electrode layer 3 includes a plurality of individual electrode layers 31 formed on the upstream side of the head substrate 1 and a common electrode layer 32 formed on the downstream side of the head substrate 1. Each individual electrode layer 31 has a band shape that generally extends in the sub-scanning direction y, and its downstream end extends to a position overlapping the upstream end of the resistor layer 15 . An individual pad portion 311 is formed at the upstream end of each individual electrode layer 31 . The individual pad portion 311 is a portion that is connected to the drive IC 7 mounted on the connection board 5 by a wire 61. The common electrode layer 32 includes a plurality of comb-teeth portions 324 and a common portion 323 that connects the plurality of comb-teeth portions 324 in common. The common portion 323 is formed along the upstream edge of the head substrate 1 in the main scanning direction It is opposed to the tip of the electrode layer 31 with a predetermined distance therebetween. The common portion 323 has extension portions 325 that are bent from both ends in the main scanning direction x in the sub scanning direction y and reach the downstream side of the head substrate 1 . The electrode layer 3 is made of, for example, Cu, and has a thickness of, for example, 0.3 to 2.0 μm. As described above, the portions of the resistor layer 4 that are not covered by the individual electrode layer 31 and the comb tooth portions 324 of the common electrode layer 32 whose tips face each other form the respective heat generating portions 41. do.

The resistor layer 4 and the electrode layer 3 are further covered with a protective layer 2. The protective layer 2 is made of an insulating material, such as SiO ₂ , SiN, SiC, AlN, or the like. The thickness of the protective layer 2 is, for example, 1.0 to 10 μm.

As shown in FIGS. 2 and 5, the protective layer 2 has a pad opening 21. As shown in FIG. The pad opening 21 exposes the individual pad portions 311 provided in the plurality of individual electrode layers 31.

The connection board 5 is disposed adjacent to the head board 1 on the upstream side in the sub-scanning direction y. The connection board 5 is, for example, a PCB board, on which the driver IC 7 and the connector 59 are mounted. The connection board 5 has an elongated rectangular shape in plan view with the main scanning direction x as the longitudinal direction.

The driver IC 7 is mounted on the connection board 5 and is provided to individually energize the plurality of heat generating parts 41. The driver IC 7 and each individual pad portion 311 of each individual electrode layer 31 are connected by a plurality of wires 61. The driver IC 7 is also connected to a wiring pattern formed on the connection board 5 by a wire 62. A print signal transmitted from the outside is input to the driver IC 7 via the connector 59. The plurality of heat generating parts 41 are individually energized in accordance with the print signal to selectively generate heat.

The driver IC 7 and the wires 61 and 62 are covered with a protective resin 78 so as to straddle the head substrate 1 and the connection substrate 5. As the protective resin 78, a black insulating resin such as epoxy resin is used, for example.

The heat radiating member 8 supports the head substrate 1 and the connection substrate 5, and is provided to radiate part of the heat generated by the heat generating section 41 to the outside. The heat radiation member 8 is made of metal such as aluminum, for example.

Next, an example of a method for manufacturing the thermal print head A1 will be described with reference to FIGS. 7 to 13.

First, as shown in FIG. 7, a material substrate 1A is prepared. The material substrate 1A is made of a single crystal semiconductor, and is, for example, a Si wafer. The material substrate 1A has a flat main surface 11A, and the main surface 11A is preferably a (100) plane.

Next, as shown in FIG. 8, an SiO ₂ wafer 150A as a plate-shaped heat storage member 150 is attached over the entire principal surface 11A of the material substrate 1A. Anodic bonding is suitable as a method for this adhesion.

Next, as shown in FIG. 9, the surface of the plate-shaped heat storage member 150 is polished to set its thickness to a desired thickness, for example, 30 to 50 μm.

Next, as shown in FIG. 10, a resistor film 4A is formed. The resistor film 4A is formed by forming a thin film of TaN by sputtering, for example.

Next, as shown in FIG. 11, the resistor film 4A is etched to form a resistor layer 4 having a predetermined width in the sub-scanning direction y and extending in the main-scanning direction x.

Next, as shown in FIG. 12, a conductive film 3A is formed. The conductive film 3A is formed by forming a layer made of Cu by, for example, plating or sputtering.

Next, as shown in FIG. 13, by selectively etching the conductive film 3A and the resistor film 4A, the resistor layer 4 separated in the main scanning direction x and the heat generating part 41 are formed. The individual electrode layer 31 to be left and covered and the comb tooth portion 324 of the common electrode layer 32 are formed.

Next, the protective layer 2 is formed by depositing SiN and SiC on the electrode layer 3 and the resistor layer 4 using, for example, CVD. Further, by partially removing the protective layer 2 by etching or the like, a pad opening 21 is formed. After this, by assembling the head board 1 and the connection board 5 onto the heat dissipation member 8, mounting the driver IC 7 connection on the connection board 5, bonding the wires 61 and 62, and forming the protective resin 78, etc. The thermal print head A1 shown in FIGS. 1 to 6 is obtained.

Next, the operation of the thermal print head A1 according to the first embodiment will be explained.

The Si wafer that is the material of the head substrate 1 has relatively good thermal conductivity, and if no precautions are taken, the heat generated by the heat generating part 41 will wastefully leak toward the heat radiating member 8, making it unsuitable for high-speed printing. However, in this thermal print head A1, since a sufficiently thick heat storage layer 15 is formed below the heat generating part 41, wasteful leakage of the heat generated by the heat generating part 41 is prevented, and high-speed printing is also possible. become suitable.

Moreover, since the heat storage layer 15 is formed by adhering an SiO ₂ wafer to a Si wafer, it is much thicker and thicker than, for example, forming by adhering SiO ₂ by sputtering. It can be formed in an overwhelmingly short time, which greatly contributes to improving the manufacturing efficiency and reducing costs of the thermal print head A1.

14 to 15 show a thermal print head according to a second embodiment of the present invention. The first feature of this thermal print head A2 is that a concave portion 115 extending in the main scanning direction x with a predetermined width in the sub-scanning direction y is formed in a region located below the heat generating portion 41 on the main surface 11 of the head substrate 1. This is different from A1 of the thermal print head according to the embodiment. In FIGS. 14 and 15, members or parts that are the same or equivalent to those of the thermal print head A1 according to the first embodiment are given the same reference numerals, and detailed explanations below will be omitted.

A concave portion 115 extending in the main scanning direction x is formed at a position on the main surface 11 of the head substrate 1 that corresponds to the position of the heat generating portion 41 in the sub-scanning direction y. The depth of this concave portion 115 is, for example, 10 to 100 μm.

The heat storage layer 15 is formed by adhesion over the entire main surface 11 so as to cover the recess 115 portion. As a result, a gap 115A is formed by the concave portion 115 directly under the heat storage layer 15 corresponding to the y position of the heat generating portion 41 in the sub-scanning direction. As in the first embodiment, at least the resistor layer 4, the electrode layer 3, and the protective layer 2 are formed in this order on the heat storage layer 15.

Next, an example of a method for manufacturing the thermal print head A2 will be described with reference to FIGS. 16 to 23.

First, as shown in FIG. 16, a material substrate 1A is prepared. The material substrate 1A is made of a single crystal semiconductor, and is, for example, a Si wafer. The material substrate 1A has a flat main surface 11A, and the main surface 11A is preferably a (100) plane.

Next, as shown in FIG. 17, a recess 115 is formed in the main surface 11A of the material substrate 1A. The recessed portion 115 can be formed by, for example, anisotropic etching. As described above, the depth of the recessed portion 115A is, for example, 10 to 100 μm.

Next, as shown in FIG. 18, an SiO ₂ wafer 150A as a plate-shaped heat storage member 150 is attached over the entire main surface 11A of the material substrate 1A. Anodic bonding is suitable as a method for this adhesion.

Next, as shown in FIG. 19, the surface of the plate-shaped heat storage member 150 is polished to set the thickness of the plate-shaped heat storage member 150 to a desired thickness, for example, 30 to 50 μm.

Next, as shown in FIG. 20, a resistor film 4A is formed. The resistor film 4A is formed by forming a thin film of TaN by sputtering, for example.

Next, as shown in FIG. 21, the resistor film 4A is etched to form a resistor layer 4 having a predetermined width in the sub-scanning direction and extending in the main-scanning direction x.

Next, as shown in FIG. 22, a conductive film 3A is formed. The conductive film 3A is formed by forming a layer made of Cu by, for example, plating or sputtering.

Next, as shown in FIG. 23, by selectively etching the conductive film 3A and the resistor film 4A, the resistor layer 4 separated in the main scanning direction x and the heat generating part 41 are formed. The individual electrode layer 31 to be left and covered and the comb tooth portion 324 of the common electrode layer 32 are formed.

Next, the protective layer 2 is formed by depositing SiN and SiC on the electrode layer 3 and the resistor layer 4 using, for example, CVD. Further, by partially removing the protective layer 2 by etching or the like, a pad opening 21 is formed. After this, by assembling the head board 1 and the connection board 5 onto the heat dissipation member 8, mounting the driver IC 7 connection on the connection board 5, bonding the wires 61 and 62, and forming the protective resin 78, etc. The thermal print head A2 shown in FIGS. 14 and 15 is obtained.

The thermal print head A2 according to the second embodiment has basically the same effect as described above for the thermal print head A1 according to the first embodiment.

In addition, the thermal print head A2 according to the second embodiment has the void 115A formed by the concave portion 115 below the heat storage layer 15, so that the heat storage performance can be further improved.

Further, in the thermal print head A2 according to the second embodiment, since the heat storage layer 15 is formed by adhering the plate-shaped heat storage member 150 to the main surface 11 of the head substrate 1, the heat storage layer 15 is directly below the heat storage layer 15. A void 115A can be formed by the concave portion 115, thereby improving heat storage performance.

Of course, the scope of the present invention is not limited to the embodiments described above, and all modifications within the scope of the matters described in each claim are all included within the scope of the present invention.

For example, as for the plurality of heat generating parts 41, it is of course possible to employ any form of heat generating part that generates heat by selectively supplying electricity to exposed parts of resistor layers arranged independently in the main scanning direction x.

A1, A2: Thermal print head 1: Head substrate 1A: Material substrate 2: Protective layer 3: Electrode layer 3A: Conductive film 4: Resistor layer 4A: Resistor film 5: Connection board 7: Driver IC
8: Heat radiation member 11: Main surface 11A: Main surface 15: Heat storage layer 21: Pad opening 31: Individual electrode layer 32: Common electrode layer 41: Heat generating part 59: Connector 61: Wire 62: Wire 78: Protective resin 91: Platen roller 115: Concave portion 115A: Gap 150: Plate heat storage member 150A; SiO ₂ wafer 151: Resist 311; Electrode pad portion 323: Common portion 324: Comb tooth portion 325: Extension portion x: Main scanning direction y: Sub-scanning direction

Claims (15)

a substrate having a main surface;
a heat storage layer formed on the main surface of the substrate;
a plurality of heat generating parts arranged in the main scanning direction on the upper layer of the heat storage layer,
The substrate is made of a Si wafer,
Each of the heat generating parts includes a resistor layer, an upstream electrode layer and a downstream electrode layer that are laminated on the resistor layer so as to expose a part of the resistor layer, and are capable of conducting electricity between them. It is formed by including
The resistor layer is made of TaN,
The thermal print head, wherein the heat storage layer is formed by adhering a plate-shaped heat storage member to the main surface of the substrate. The thermal print head according to claim 1, wherein the plate-shaped heat storage member is made of _SiO2 . The thermal print head according to claim 2, wherein the plate-shaped heat storage member has a thickness of 30 to 50 μm. 4. The thermal print head according to claim 1, wherein the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate. a substrate having a concave portion extending in the main scanning direction on the main surface;
a heat storage layer formed on the main surface of the substrate so as to cover the recessed portion;
a plurality of heat generating parts arranged in the main scanning direction in an upper layer of the heat storage layer and located above the recessed part,
The substrate is made of a Si wafer,
Each of the heat generating parts includes a resistor layer, an upstream electrode layer and a downstream electrode layer that are laminated on the resistor layer so as to expose a part of the resistor layer, and are capable of conducting electricity between them. It is formed by including
The resistor layer is made of TaN,
The thermal print head, wherein the heat storage layer is formed by adhering a plate-shaped heat storage member to the main surface of the substrate. The thermal print head according to claim 5, wherein the plate-shaped heat storage member is made of _SiO2 . The thermal print head according to claim 6, wherein the plate-shaped heat storage member has a thickness of 30 to 50 μm. The thermal print head according to claim 5, wherein the depth of the recessed portion is 10 to 100 μm. 9. The thermal print head according to claim 5, wherein the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate. The substrate includes a substrate having a main surface, a heat storage layer formed on the main surface of the substrate, and a plurality of heat generating parts arranged in the main scanning direction on an upper layer of the heat storage layer, and the substrate is made of a Si wafer. , each of the heat generating parts includes a resistor layer, and an upstream electrode layer and a downstream electrode layer that are laminated on the resistor layer so as to expose a part of the resistor layer, and are capable of conducting electricity between them. A method for manufacturing a thermal print head, wherein the resistor layer is made of TaN, and the heat storage layer is formed by adhering a plate-shaped heat storage member to the main surface of the substrate. And,
A method for manufacturing a thermal print head, characterized in that the heat storage layer is formed by attaching a plate-shaped heat storage member to the main surface of a material substrate made of a Si wafer. The method for manufacturing a thermal print head according to claim 10, wherein the plate-shaped heat storage member is made of _SiO2 . 12. The method of manufacturing a thermal print head according to claim 11, wherein the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate material by anodic bonding. a substrate having a recess extending in the main scanning direction on a main surface; a heat storage layer formed on the main surface of the substrate so as to cover the recess; and a heat storage layer that is an upper layer of the heat storage layer and is above the recess. a plurality of heat generating parts arranged in the main scanning direction, the substrate being made of a Si wafer, and each of the heat generating parts having a resistor layer and a part of the resistor layer exposed. The resistor layer is made of TaN, and the heat storage layer is made of TaN. , a method for manufacturing a thermal print head, wherein a plate-shaped heat storage member is attached to the main surface of the substrate,
A method for manufacturing a thermal print head, characterized in that the heat storage layer is formed by attaching a plate-shaped heat storage member to the main surface of a material substrate made of a Si wafer. 14. The method for manufacturing a thermal print head according to claim 13, wherein the plate-shaped heat storage member is made of _SiO2 . 15. The method of manufacturing a thermal print head according to claim 14, wherein the plate-shaped heat storage member is attached to the entire surface or substantially the entire surface of the main surface of the substrate material by anodic bonding.

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