JP2024028701A5 - - Google Patents

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Publication number
JP2024028701A5
JP2024028701A5 JP2023193056A JP2023193056A JP2024028701A5 JP 2024028701 A5 JP2024028701 A5 JP 2024028701A5 JP 2023193056 A JP2023193056 A JP 2023193056A JP 2023193056 A JP2023193056 A JP 2023193056A JP 2024028701 A5 JP2024028701 A5 JP 2024028701A5
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Japan
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processing tool
duty cycle
workpiece
frequency
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JP2023193056A
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Japanese (ja)
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JP2024028701A (ja
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Priority claimed from US15/965,621 external-priority patent/US10840086B2/en
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Publication of JP2024028701A5 publication Critical patent/JP2024028701A5/ja
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JP2023193056A 2018-04-27 2023-11-13 周期的高電圧バイアスを用いたプラズマ化学気相堆積 Pending JP2024028701A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US15/965,621 US10840086B2 (en) 2018-04-27 2018-04-27 Plasma enhanced CVD with periodic high voltage bias
US15/965,621 2018-04-27
PCT/US2019/024430 WO2019209453A1 (en) 2018-04-27 2019-03-27 Plasma enhanced cvd with periodic high voltage bias
JP2020559532A JP7678670B2 (ja) 2018-04-27 2019-03-27 周期的高電圧バイアスを用いたプラズマ化学気相堆積

Related Parent Applications (1)

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JP2020559532A Division JP7678670B2 (ja) 2018-04-27 2019-03-27 周期的高電圧バイアスを用いたプラズマ化学気相堆積

Publications (2)

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JP2024028701A JP2024028701A (ja) 2024-03-05
JP2024028701A5 true JP2024028701A5 (enExample) 2025-05-29

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JP2020559532A Active JP7678670B2 (ja) 2018-04-27 2019-03-27 周期的高電圧バイアスを用いたプラズマ化学気相堆積
JP2023193056A Pending JP2024028701A (ja) 2018-04-27 2023-11-13 周期的高電圧バイアスを用いたプラズマ化学気相堆積

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JP2020559532A Active JP7678670B2 (ja) 2018-04-27 2019-03-27 周期的高電圧バイアスを用いたプラズマ化学気相堆積

Country Status (6)

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US (2) US10840086B2 (enExample)
JP (2) JP7678670B2 (enExample)
KR (2) KR102849073B1 (enExample)
CN (1) CN112020574A (enExample)
TW (1) TWI771577B (enExample)
WO (1) WO2019209453A1 (enExample)

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US12131903B2 (en) * 2020-08-06 2024-10-29 Applied Materials, Inc. Pulsed-plasma deposition of thin film layers
US12142459B2 (en) 2020-09-08 2024-11-12 Applied Materials, Inc. Single chamber flowable film formation and treatments
US11699571B2 (en) 2020-09-08 2023-07-11 Applied Materials, Inc. Semiconductor processing chambers for deposition and etch
US20220298636A1 (en) * 2021-03-22 2022-09-22 Applied Materials, Inc. Methods and apparatus for processing a substrate
FR3131433B1 (fr) * 2021-12-29 2023-12-22 Commissariat Energie Atomique Procédé d’activation d’une couche exposée
JP2023170791A (ja) * 2022-05-20 2023-12-01 東京エレクトロン株式会社 改質方法及び改質装置
KR20240086485A (ko) * 2022-12-09 2024-06-18 성균관대학교산학협력단 고 종횡 비 반도체 구조물의 갭을 채우기 위한 다중 펄스를 이용한 원자층 증착 장치 및 이를 이용한 원자층 증착방법

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