JP2024004456A - 本体及び層を含むスーパーストレート、及び、それを形成及び使用する方法 - Google Patents

本体及び層を含むスーパーストレート、及び、それを形成及び使用する方法 Download PDF

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Publication number
JP2024004456A
JP2024004456A JP2023075812A JP2023075812A JP2024004456A JP 2024004456 A JP2024004456 A JP 2024004456A JP 2023075812 A JP2023075812 A JP 2023075812A JP 2023075812 A JP2023075812 A JP 2023075812A JP 2024004456 A JP2024004456 A JP 2024004456A
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layer
superstrate
distal surface
precursor
proximal
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JP2024004456A5 (enExample
Inventor
ニャーズ クスナトディノフ
Khusnatdinov Niyaz
リウ ウェイジュン
wei-jun Liu
ダブリュー アーヴィング ジェームス
W Irving James
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Canon Inc
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Canon Inc
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Publication of JP2024004456A publication Critical patent/JP2024004456A/ja
Publication of JP2024004456A5 publication Critical patent/JP2024004456A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laminated Bodies (AREA)
  • Micromachines (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Medical Uses (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023075812A 2022-06-28 2023-05-01 本体及び層を含むスーパーストレート、及び、それを形成及び使用する方法 Pending JP2024004456A (ja)

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Application Number Priority Date Filing Date Title
US17/809,414 US12325046B2 (en) 2022-06-28 2022-06-28 Superstrate including a body and layers and methods of forming and using the same
US17/809,414 2022-06-28

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JP2024004456A true JP2024004456A (ja) 2024-01-16
JP2024004456A5 JP2024004456A5 (enExample) 2026-05-12

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US (1) US12325046B2 (enExample)
JP (1) JP2024004456A (enExample)
KR (1) KR102927411B1 (enExample)
TW (1) TWI910426B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20260015096A (ko) 2024-07-24 2026-02-02 신에쓰 가가꾸 고교 가부시끼가이샤 규소 함유막 형성용 조성물, 막 형성 방법, 및 슈퍼 스트레이트

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