JP2023547315A5 - - Google Patents

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Publication number
JP2023547315A5
JP2023547315A5 JP2023518343A JP2023518343A JP2023547315A5 JP 2023547315 A5 JP2023547315 A5 JP 2023547315A5 JP 2023518343 A JP2023518343 A JP 2023518343A JP 2023518343 A JP2023518343 A JP 2023518343A JP 2023547315 A5 JP2023547315 A5 JP 2023547315A5
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JP
Japan
Prior art keywords
reactor
gas
processing chamber
supply
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023518343A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023547315A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/056187 external-priority patent/WO2022087365A1/en
Publication of JP2023547315A publication Critical patent/JP2023547315A/ja
Publication of JP2023547315A5 publication Critical patent/JP2023547315A5/ja
Pending legal-status Critical Current

Links

JP2023518343A 2020-10-23 2021-10-22 プラズマエッチングリアクタ内への気相堆積プロセスの統合 Pending JP2023547315A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063198513P 2020-10-23 2020-10-23
US63/198,513 2020-10-23
PCT/US2021/056187 WO2022087365A1 (en) 2020-10-23 2021-10-22 Integration of vapor deposition process into plasma etch reactor

Publications (2)

Publication Number Publication Date
JP2023547315A JP2023547315A (ja) 2023-11-10
JP2023547315A5 true JP2023547315A5 (https=) 2024-10-31

Family

ID=81289467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023518343A Pending JP2023547315A (ja) 2020-10-23 2021-10-22 プラズマエッチングリアクタ内への気相堆積プロセスの統合

Country Status (4)

Country Link
US (1) US20230260759A1 (https=)
JP (1) JP2023547315A (https=)
KR (1) KR20230088869A (https=)
WO (1) WO2022087365A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202449212A (zh) * 2022-12-28 2024-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 調整製程腔室之容積之方法及設備
US20250253157A1 (en) * 2024-02-01 2025-08-07 Tokyo Electron Limited Method for etching a pattern in a layer of a substrate

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US20070116888A1 (en) * 2005-11-18 2007-05-24 Tokyo Electron Limited Method and system for performing different deposition processes within a single chamber
JP4911984B2 (ja) * 2006-02-08 2012-04-04 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法及びシャワーヘッド
US7794546B2 (en) * 2006-03-08 2010-09-14 Tokyo Electron Limited Sealing device and method for a processing system
KR101577474B1 (ko) * 2008-02-08 2015-12-14 램 리써치 코포레이션 플라즈마 프로세싱 장치용 rf 리턴 스트랩
WO2009117565A2 (en) * 2008-03-21 2009-09-24 Applied Materials, Inc. Method and apparatus of a substrate etching system and process
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JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP6403722B2 (ja) * 2016-07-21 2018-10-10 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、半導体装置の製造方法、プログラム
US10734238B2 (en) * 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
KR102556277B1 (ko) * 2018-04-23 2023-07-17 삼성디스플레이 주식회사 성막 장치 및 성막 방법
CN120608873A (zh) * 2018-09-28 2025-09-09 朗姆研究公司 避免沉积副产物积聚的真空泵保护
TWI873122B (zh) * 2019-02-20 2025-02-21 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 填充一基板之一表面內所形成的一凹槽的方法、根據其所形成之半導體結構、及半導體處理設備

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