JP2024510662A5 - - Google Patents

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Publication number
JP2024510662A5
JP2024510662A5 JP2023557655A JP2023557655A JP2024510662A5 JP 2024510662 A5 JP2024510662 A5 JP 2024510662A5 JP 2023557655 A JP2023557655 A JP 2023557655A JP 2023557655 A JP2023557655 A JP 2023557655A JP 2024510662 A5 JP2024510662 A5 JP 2024510662A5
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JP
Japan
Prior art keywords
approximately
duty cycle
substrate support
process gas
supplying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023557655A
Other languages
English (en)
Japanese (ja)
Other versions
JP2024510662A (ja
Filing date
Publication date
Priority claimed from US17/208,735 external-priority patent/US20220298636A1/en
Application filed filed Critical
Publication of JP2024510662A publication Critical patent/JP2024510662A/ja
Publication of JP2024510662A5 publication Critical patent/JP2024510662A5/ja
Pending legal-status Critical Current

Links

JP2023557655A 2021-03-22 2022-02-01 基板を処理するための方法及び装置 Pending JP2024510662A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/208,735 2021-03-22
US17/208,735 US20220298636A1 (en) 2021-03-22 2021-03-22 Methods and apparatus for processing a substrate
PCT/US2022/014653 WO2022203763A1 (en) 2021-03-22 2022-02-01 Methods and apparatus for processing a substrate

Publications (2)

Publication Number Publication Date
JP2024510662A JP2024510662A (ja) 2024-03-08
JP2024510662A5 true JP2024510662A5 (https=) 2025-02-12

Family

ID=83285226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023557655A Pending JP2024510662A (ja) 2021-03-22 2022-02-01 基板を処理するための方法及び装置

Country Status (6)

Country Link
US (1) US20220298636A1 (https=)
JP (1) JP2024510662A (https=)
KR (1) KR20230159859A (https=)
CN (1) CN117377791A (https=)
TW (1) TW202237879A (https=)
WO (1) WO2022203763A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12467144B2 (en) * 2022-10-27 2025-11-11 Applied Materials, Inc. Methods of correlating zones of processing chambers, and related systems and methods

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6184158B1 (en) * 1996-12-23 2001-02-06 Lam Research Corporation Inductively coupled plasma CVD
US7622369B1 (en) * 2008-05-30 2009-11-24 Asm Japan K.K. Device isolation technology on semiconductor substrate
KR101315950B1 (ko) * 2009-06-24 2013-10-08 엘지전자 주식회사 플라즈마 증착 장치 및 이 장치를 이용한 박막 제조 방법
KR101732187B1 (ko) * 2009-09-03 2017-05-02 에이에스엠 저펜 가부시기가이샤 플라즈마 강화된 화학기상 증착법에 의해 규소-질소 결합을 갖는 등각성 유전체 막을 형성하는 방법
US20120202315A1 (en) * 2011-02-03 2012-08-09 Applied Materials, Inc. In-situ hydrogen plasma treatment of amorphous silicon intrinsic layers
JP2013033806A (ja) * 2011-08-01 2013-02-14 Sharp Corp 半導体薄膜の製造方法およびプラズマcvd装置
US20140329027A1 (en) * 2013-05-02 2014-11-06 Applied Materials, Inc. Low temperature flowable curing for stress accommodation
KR101576637B1 (ko) * 2014-07-15 2015-12-10 주식회사 유진테크 고종횡비를 가지는 오목부 상에 절연막을 증착하는 방법
US10047440B2 (en) * 2015-09-04 2018-08-14 Applied Materials, Inc. Methods and apparatus for uniformly and high-rate depositing low resistivity microcrystalline silicon films for display devices
KR20190011817A (ko) * 2016-06-25 2019-02-07 어플라이드 머티어리얼스, 인코포레이티드 갭충전 애플리케이션들을 위한 유동가능 비정질 실리콘 막들
US10840086B2 (en) * 2018-04-27 2020-11-17 Applied Materials, Inc. Plasma enhanced CVD with periodic high voltage bias
US11578409B2 (en) * 2019-06-08 2023-02-14 Applied Materials, Inc. Low deposition rates for flowable PECVD
WO2020257003A1 (en) * 2019-06-17 2020-12-24 Applied Materials, Inc. High density plasma cvd microcrystalline or amorphous si film for display

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