JP2024059868A5 - - Google Patents
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- JP2024059868A5 JP2024059868A5 JP2024027978A JP2024027978A JP2024059868A5 JP 2024059868 A5 JP2024059868 A5 JP 2024059868A5 JP 2024027978 A JP2024027978 A JP 2024027978A JP 2024027978 A JP2024027978 A JP 2024027978A JP 2024059868 A5 JP2024059868 A5 JP 2024059868A5
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- gas
- substrate
- processing system
- substrate processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862729124P | 2018-09-10 | 2018-09-10 | |
| US62/729,124 | 2018-09-10 | ||
| PCT/US2019/049079 WO2020055612A1 (en) | 2018-09-10 | 2019-08-30 | Atomic layer treatment process using metastable activated radical species |
| JP2021513199A JP7447093B2 (ja) | 2018-09-10 | 2019-08-30 | 準安定活性ラジカル種を使用する原子層処置プロセス |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021513199A Division JP7447093B2 (ja) | 2018-09-10 | 2019-08-30 | 準安定活性ラジカル種を使用する原子層処置プロセス |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2024059868A JP2024059868A (ja) | 2024-05-01 |
| JP2024059868A5 true JP2024059868A5 (https=) | 2025-05-27 |
| JP7710551B2 JP7710551B2 (ja) | 2025-07-18 |
Family
ID=69777819
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021513199A Active JP7447093B2 (ja) | 2018-09-10 | 2019-08-30 | 準安定活性ラジカル種を使用する原子層処置プロセス |
| JP2024027978A Active JP7710551B2 (ja) | 2018-09-10 | 2024-02-28 | 準安定活性ラジカル種を使用する原子層処置プロセス |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021513199A Active JP7447093B2 (ja) | 2018-09-10 | 2019-08-30 | 準安定活性ラジカル種を使用する原子層処置プロセス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US12451332B2 (https=) |
| JP (2) | JP7447093B2 (https=) |
| KR (1) | KR102952863B1 (https=) |
| CN (2) | CN112673456B (https=) |
| TW (1) | TWI850254B (https=) |
| WO (1) | WO2020055612A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11694911B2 (en) | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
| US11521834B2 (en) * | 2020-08-26 | 2022-12-06 | Tokyo Electron Limited | Plasma processing systems and methods for chemical processing a substrate |
| CN117501423A (zh) * | 2021-05-06 | 2024-02-02 | 应用材料公司 | 用于形成无空隙且无接缝的钨特征的处理系统及方法 |
| US20230033058A1 (en) * | 2021-07-29 | 2023-02-02 | Applied Materials, Inc. | Reactor with inductively coupled plasma source |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4124543B2 (ja) * | 1998-11-11 | 2008-07-23 | 東京エレクトロン株式会社 | 表面処理方法及びその装置 |
| US6540838B2 (en) * | 2000-11-29 | 2003-04-01 | Genus, Inc. | Apparatus and concept for minimizing parasitic chemical vapor deposition during atomic layer deposition |
| US10283321B2 (en) * | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
| US8617411B2 (en) * | 2011-07-20 | 2013-12-31 | Lam Research Corporation | Methods and apparatus for atomic layer etching |
| US9666414B2 (en) | 2011-10-27 | 2017-05-30 | Applied Materials, Inc. | Process chamber for etching low k and other dielectric films |
| US8728955B2 (en) | 2012-02-14 | 2014-05-20 | Novellus Systems, Inc. | Method of plasma activated deposition of a conformal film on a substrate surface |
| US20140030444A1 (en) | 2012-07-30 | 2014-01-30 | Novellus Systems, Inc. | High pressure, high power plasma activated conformal film deposition |
| US9132436B2 (en) * | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
| US10316409B2 (en) * | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
| US20140235069A1 (en) * | 2013-02-15 | 2014-08-21 | Novellus Systems, Inc. | Multi-plenum showerhead with temperature control |
| US9425041B2 (en) * | 2015-01-06 | 2016-08-23 | Lam Research Corporation | Isotropic atomic layer etch for silicon oxides using no activation |
| US9601319B1 (en) * | 2016-01-07 | 2017-03-21 | Lam Research Corporation | Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process |
| US10229837B2 (en) * | 2016-02-04 | 2019-03-12 | Lam Research Corporation | Control of directionality in atomic layer etching |
| JP2017157660A (ja) * | 2016-03-01 | 2017-09-07 | 株式会社日立国際電気 | 半導体装置の製造方法および基板処理装置 |
| US10604841B2 (en) * | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
| US11694911B2 (en) | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
| JP6767885B2 (ja) * | 2017-01-18 | 2020-10-14 | 東京エレクトロン株式会社 | 保護膜形成方法 |
-
2019
- 2019-08-30 CN CN201980059258.XA patent/CN112673456B/zh active Active
- 2019-08-30 KR KR1020217010537A patent/KR102952863B1/ko active Active
- 2019-08-30 WO PCT/US2019/049079 patent/WO2020055612A1/en not_active Ceased
- 2019-08-30 JP JP2021513199A patent/JP7447093B2/ja active Active
- 2019-08-30 US US17/274,350 patent/US12451332B2/en active Active
- 2019-08-30 CN CN202510519783.2A patent/CN120656937A/zh active Pending
- 2019-09-09 TW TW108132419A patent/TWI850254B/zh active
-
2024
- 2024-02-28 JP JP2024027978A patent/JP7710551B2/ja active Active
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