Classifications

• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
  • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
  • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
  • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
  • H10P14/6518—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer
  • H10P14/6519—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen
  • H10P14/6522—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by introduction of substances into an already-existing insulating layer the substance being oxygen introduced into a nitride material, e.g. changing SiN to SiON
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
  • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
  • C23C16/34—Nitrides
  • C23C16/345—Silicon nitride
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
  • C23C16/45536—Use of plasma, radiation or electromagnetic fields
  • C23C16/45542—Plasma being used non-continuously during the ALD reactions
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45523—Pulsed gas flow or change of composition over time
  • C23C16/45525—Atomic layer deposition [ALD]
  • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
  • C23C16/45563—Gas nozzles
  • C23C16/45565—Shower nozzles
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
  • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
  • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
• • C—CHEMISTRY; METALLURGY
  • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
  • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
  • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
  • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
  • C23C16/52—Controlling or regulating the coating process
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32082—Radio frequency generated discharge
  • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
  • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/3244—Gas supply means
  • H01J37/32449—Gas control, e.g. control of the gas flow
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32715—Workpiece holder
  • H01J37/32724—Temperature
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
  • H01J37/32—Gas-filled discharge tubes
  • H01J37/32431—Constructional details of the reactor
  • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
  • H01J37/32853—Hygiene
  • H01J37/32862—In situ cleaning of vessels and/or internal parts
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
  • H10P14/6326—Deposition processes
  • H10P14/6328—Deposition from the gas or vapour phase
  • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
  • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
  • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
  • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
  • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
  • H10P14/6529—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour
  • H10P14/6532—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials by exposure to a gas or vapour by exposure to a plasma
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P50/00—Etching of wafers, substrates or parts of devices
  • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
  • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
  • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0402—Apparatus for fluid treatment
  • H10P72/0418—Apparatus for fluid treatment for etching
  • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
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  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/04—Apparatus for manufacture or treatment
  • H10P72/0431—Apparatus for thermal treatment
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  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
  • H10P72/0602—Temperature monitoring
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  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
  • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
  • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
  • H01J2237/32—Processing objects by plasma generation
  • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
  • H01J2237/334—Etching

Definitions

• the present disclosure relates to substrate processing systems, and more particularly to substrate processing systems for performing a treatment process using metastable activated radical species.
• Substrate processing systems may be used to treat substrates such as semiconductor wafers.
• the substrate processing system typically includes a processing chamber, a substrate support (such as an electrostatic chuck) and a gas delivery system. Examples of substrate treatments include etching, deposition, photoresist removal, cleaning, etc.
• the substrate is arranged on the substrate support and one or more process gases may be introduced by the gas delivery system into the processing chamber.
• RF power may be supplied to strike plasma that initiates chemical reactions.
• An RF bias may be supplied to the substrate support to control ion energy.
• a method for treating an exposed surface of a substrate includes a) purging a first chamber and a second chamber of a substrate processing system using a purge gas, wherein a gas distribution device is arranged between the first chamber and the second chamber; b) after a), flowing a treatment gas to the second chamber but not the first chamber to create an adsorption layer on a surface of a substrate arranged on a substrate support in the second chamber; c) stopping flow of the treatment gas to the second chamber; d) flowing the purge gas to purge the first chamber and the second chamber; and e) while flowing the purge gas to the first chamber, striking plasma in the first chamber to create metastable active radical species and delivering the metastable active radical species through the gas distribution device to the second chamber to surface activate the adsorption layer.
• the substrate is oxidized or etched with monolayer control.
• the method includes supplying the purge gas to the first chamber during b).
• the purge gas includes helium (He) and the treatment gas includes molecular oxygen (O2).
• the purge gas is selected from a group consisting of helium (He) and molecular nitrogen (N2) and the treatment gas is selected from a group consisting of molecular oxygen (O2), hydrochloric acid (HCI), molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2).
• the method includes etching the substrate by selecting the treatment gas from a group consisting of molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2); and controlling a temperature of the substrate during treatment to a predetermined temperature that is less than an etch reaction temperature of the selected treatment gas.
• the treatment gas from a group consisting of molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2)
• the metastable active radical species surface activate the adsorption layer.
• a) to f) are repeated one or more times.
• the first chamber and the second chamber are void of the treatment gas during f).
• a predetermined volume of the treatment gas is supplied during b).
• a substrate processing system for selectively etching a substrate includes a first chamber and a second chamber including a substrate support.
• a gas delivery system selectively supplies at least one of a purge gas and a treatment gas to the first chamber and the second chamber.
• a plasma generating system selectively generates plasma in the first chamber.
• a gas distribution device defines a plenum and includes a first plurality of through holes from an upper surface of the gas distribution device to a lower surface of the gas distribution device and a second plurality of through holes from the plenum to the lower surface.
• a controller is configured to a) flow the purge gas to purge the first chamber and the second chamber; b) after a), flow the treatment gas to the plenum to create an adsorption layer on a surface of the substrate; c) stop flow of the treatment gas; d) flow the purge gas to purge the first chamber and the second chamber; and e) while flowing the purge gas to the first chamber, strike plasma in the first chamber to create metastable active radical species and to deliver the metastable active radical species to the second chamber through the gas distribution device.
• the controller is configured to select helium (He) as the purge gas and molecular oxygen (O2) as the treatment gas.
• the controller is configured to select the purge gas from a group consisting of helium (He) and molecular nitrogen (N2) and the treatment gas from a group consisting of molecular oxygen (O2), hydrochloric acid (HCI), molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H 2 ).
• the controller is configured to etch the substrate by selecting the treatment gas from a group consisting of molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2); and controlling a temperature of the substrate during treatment to a predetermined temperature that is less than an etch reaction temperature of the selected treatment gas.
• the treatment gas from a group consisting of molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2)
• the metastable active radical species surface activate the adsorption layer.
• the controller is configured to repeat a) to e) one or more times.
• the first chamber and the second chamber are void of the treatment gas during e).
• the controller is configured to supply a predetermined volume of the treatment gas during b).
• the controller is configured to supply the purge gas to the first chamber during b).
• FIGs. 1A to 1 D illustrate an atomic layer treatment process using metastable activated radical species to surface activate treatment species adsorbed onto a surface of a substrate according to the present disclosure
• FIG. 2 is a functional block diagram of an example of a substrate processing system according to the present disclosure
• FIG. 3 is a plan view illustrating an example of a gas distribution device including a dual gas plenum according to the present disclosure
• FIG. 4 is a first cross-sectional view of the gas distribution device including the dual gas plenum of FIG. 3 according to the present disclosure
• FIG. 5 is a second cross-sectional view of the gas distribution device including the dual gas plenum of FIG. 3 according to the present disclosure.
• FIG. 6 is a flowchart of an example of a method for atomic layer treatment using metastable activated radical species to surface activate treatment species adsorbed onto an exposed surface of a substrate according to the present disclosure.
• Oxygen plasma or oxygen downstream plasma may be used for oxidation treatment of a surface of a substrate.
• Direct oxygen plasma has high energy oxygen ions that can damage a surface of the substrate. Porous materials of the substrate experience increased damage.
• Other processes use remote or downstream plasma and attempt to filter oxygen ions. However, some ions still pass through the filter and cause damage to the substrate.
• the oxygen plasma provides very reactive oxygen radicals that oxidize the surface quickly. It is very hard to control uniformity across the substrate and maintain substrate to substrate repeatability. The oxidation species are often over supplied by the oxygen plasma which leads to uncontrolled oxidation and damage to sensitive surfaces. If the surface of the substrate has several types of materials that are exposed, loading effects will be significant if the materials have different oxidation behavior due to local consumption variation limited by the species transportation speed.
• Systems and methods according to the present disclosure relate to processes for oxidizing or etching the surface of the substrate at a monolayer level with precise control.
• the oxidation or etching is limited by adsorbed oxygen at a rate of one monolayer at a time.
• diffusion is minimized by activating the oxygen only at a top surface of the substrate using downstream He radicals.
• Advantages include oxidation at a monolayer level, minimized diffusion, no ion damage, and precise oxidation control.
• the process includes atomic layer treatment using molecular oxygen (O2) and helium (He), although other treatments are described herein.
• the systems and methods described herein can be used to etch an exposed surface of a substrate at a monolayer level.
• the treatment gas may include HCI and the metastable activated radical species are used to surface activate chlorine to etch a monolayer.
• CI2, NF3 or H2 are adsorbed onto a surface of the substrate at a temperature lower than an etch reaction temperature (e.g. lower than about 300°C for CI2 or NF3 and lower than about 400°C for H2).
• the metastable activated radical species are used to surface activate the surface adsorbed chlorine, fluorine or hydrogen species to provide monolayer etching.
• FIGs. 1A to 1 D An example is shown in FIGs. 1A to 1 D.
• a substrate 12 is arranged on a substrate support in a processing chamber.
• the substrate includes an exposed low k dielectric layer and an exposed atomic layer deposition (ALD) silicon nitride (S13N4) layer.
• ALD exposed atomic layer deposition
• S13N4 exposed atomic layer deposition
• He flow is supplied through a gas distribution device 10 to purge the processing chamber.
• a predetermined amount of treatment gas such as O2 is supplied by the gas distribution device 10.
• O2 for example only, 100 to 10,000 standard cubic centimeters (seem) of O2 (e.g. 1000 seem) is supplied for 1 to 100 seconds (e.g. 10 seconds) to allow O2 saturation and O2 adsorption on a surface of the substrate.
• the treatment gas O2
• the processing chamber is purged with high flow He to remove residual O2 in the chamber.
• 2500 to 20,000 seem (e.g. 5000 seem) of He is supplied for 5 seconds to 60 seconds (e.g. 10 seconds).
• plasma has not been struck.
• FIG. 1 D plasma is turned on after He purge. He * metastable activated radical species are used to surface activate the adsorbed O2 and oxidize a monolayer on the surface. The process can be repeated one or more times as needed.
• the low k dielectric film has negligible loss after oxidation of the ALD SiN film whereas other methods may experience loss of about 100 Angstroms of the low k dielectric film.
• Advantages of the foregoing include controlled and minimized oxidization (about a monolayer) per cycle. Oxygen ion damage is eliminated since the plasma does not include oxygen (e.g. He plasma is used). Good uniformity occurs since a monolayer of oxygen is saturated on all of the substrate surfaces. The process enables precise oxidation amount control by varying the number of cycles.
• Oxygen is supplied at a fixed dose below the gas distribution device while purge gas flows to the first chamber (and optionally to the second chamber). This approach prevents excess oxygen back diffusion to the ICP plasma region which may create oxygen ions and cause ion damage.
• the oxygen is adsorbed on the surface of the substrate at a monolayer level and the rest of the oxygen in the processing chamber is purged. This approach provides uniform coverage of treatment gas such as oxygen over the surface of the substrate.
• the surface dose of oxygen is self-limited based on the desorption rate.
• He only plasma is generated above the gas distribution device. Therefore only neutral He* radicals travel downstream and reach the surface of the substrate.
• the adsorbed oxygen is surface activated locally on the surface of the substrate by the He * radicals and the oxygen oxidizes an underlying surface of the substrate.
• the oxygen dose depends on adsorption. This process is less sensitive to loading effects due to density variations or different materials exposed at the same time.
• the purge gas may include molecular nitrogen (N2) or another inert gas such as argon (Ar), neon (Ne), krypton (Kr), xenon (Xe), and mixtures thereof.
• Other treatment gases for etching a monolayer include hydrochloric acid (HCI), molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2) as will be described further below.
• the substrate processing system 50 includes a plasma source 51 and a substrate support 52 such as an electrostatic chuck, pedestal or other type of substrate support.
• the plasma source 51 includes an ICP source.
• the plasma source 51 may include other suitable plasma sources such as CCP, ECR or microwave plasma sources.
• a substrate 54 is arranged on the substrate support 52 during treatment.
• the substrate support 52 is temperature controlled (heating and/or cooling) using one or more temperature control elements (TCEs) 55, as resistive heaters 56, coolant channels 58, or other types of thermal control devices.
• TCEs temperature control elements
• the substrate support 52 may include a single temperature control zone or a plurality of temperature control zones that are individually controlled.
• the substrate processing system 50 includes an upper chamber 60.
• the upper chamber 60 has a dome shape, although other shapes can be used.
• a coil 64 is arranged around an outer surface of the upper chamber 60.
• a gas injector 68 injects plasma gas into the upper chamber 60.
• a gas distribution device 84 includes a first plurality of through holes 86 that pass from a top surface of the gas distribution device 84 to a bottom surface of the gas distribution device 84.
• the gas distribution device 84 also includes a plenum 85 and a second plurality of through holes 83 that pass from the plenum 85 to a bottom surface of the gas distribution device 84.
• the first plurality of through holes 86 are not in fluid communication with the plenum 85.
• an RF generating system 87 generates and outputs RF power to the coil 64.
• the RF generating system 87 may include an RF generator 88 that generates RF power that is fed by a matching network 89 to the coil 64.
• a gas delivery system 90-1 includes one or more gas sources 92-1 , 92-2, ... , and 92-N (collectively gas sources 92), where N is an integer greater than zero.
• the gas sources 92 are connected by valves 94-1 , 94-2, ... , and 94-N (collectively valves 94) and mass flow controllers 96-1 , 96-2, ... , and 96-N (collectively mass flow controllers 96) to a manifold 98.
• Another gas delivery system 90-2 may be used to deliver treatment gas to the plenum 85 of the gas distribution device 84.
• a temperature controller 106 may be connected to the TCEs 55 such as the resistive heaters 56.
• the temperature controller 63 may communicate with one or more temperature sensors (not shown) that sense a temperature of the substrate support or the substrate and a temperature of a coolant controller 108 to control coolant flow through the coolant channels 58.
• the coolant controller 108 may include a coolant pump, a reservoir and/or one or more temperature sensors (not shown).
• a valve 130 and pump 132 may be used to control pressure in the processing chamber and to evacuate reactants therefrom.
• a system controller 140 may be used to control components of the substrate processing system 10 as shown in FIG. 2.
• Systems and methods according to the present disclosure generate plasma utilizing inert gas to generate a high density of metastable radical activated species.
• the metastable radical activated species carry high enough chemical energy to excite other active radical species that are deposited as a monolayer on a surface of the substrate 54.
• the process is operated using an ICP chamber with ICP power in a range from 500W to 5kW.
• the RF power applied to the inductive coil is at 13.56MHz, although other frequencies can be used.
• the process is performed at a chamber pressure range of l OmTorr to 10Torr.
• a gas distribution device 200 includes a dual gas plenum 202 for delivering treatment gas species and excited gas species including metastable activated radical species according to the present disclosure.
• the dual gas plenum 202 delivers a mixture of the treatment gas and metastable activated radical species to the lower chamber without mixing in the upper chamber.
• the process temperature is in a range from 75°C to 400°C, although other process temperatures may be used. In other examples, the process temperature is in a range from 100°C to 200°C, although other process temperatures may be used.
• the gas distribution device 200 includes an upper flange 204, sidewalls 206 and a bottom surface 208 (forming an upper surface of the dual gas plenum 202).
• the dual gas plenum 202 includes a gas inlet 210 for receiving the treatment gas.
• the dual gas plenum 202 defines an annular channel 220 and connecting channels 224.
• the connecting channels 224 extend between opposite sides of the annular channel 220 across inner portions of the bottom surface 208.
• the annular channel 220 may be formed at a location between the sidewalls 206 and the bottom surface 208.
• the annular channel 220 and the connecting channels 224 are in fluid communication with the gas inlet 210.
• the treatment gas mixture flows through the annular channel 220 and into the connecting channels 224. Downwardly directed though holes shown in FIG. 5 direct the treatment gas mixture from the connecting channels 224 into the lower chamber towards the substrate.
• Areas 228 located between the connecting channels 224 include a plurality of through holes 230 that pass through the bottom surface 208.
• the plurality of through holes 230 have a circular cross section and uniform spacing, although other cross sections and/or non-uniform spacing can be used.
• the plurality of through holes 232 have a diameter in a range from 3mm to 10 mm, although other diameters may be used.
• FIGs. 4-5 cross-sectional views of the bottom surface 208 of the dual gas plenum 202 are shown.
• a first cross-sectional view taken along the connecting channels 224 is shown.
• Treatment gas is supplied to the annular channel 220, which supplies treatment gas to the connecting channels 224.
• a plurality of through holes 232 fluidly connects the connecting channels 224 to the lower chamber.
• the plurality of through holes 232 have a diameter in a range from 0.1 mm to 1 mm, although other diameters may be used.
• the plurality of through holes 232 can be located along the connecting channels 224 with uniform or non-uniform spacing.
• FIG. 5 a second cross-sectional view taken through the area 228 is shown.
• the plurality of through holes 230 pass through the bottom surface 208 from the upper chamber to the lower chamber.
• the flow paths of the excited gas species and the treatment gas species are separate until they reach the lower chamber.
• Additional examples of gas distribution devices can be found in commonly- assigned U.S. Patent Publication US 20180174870-A1 which is entitled“SYSTEMS AND METHODS FOR METASTABLE ACTIVATED RADICAL SELECTIVE STRIP AND ETCH USING DUAL PLENUM SHOWERHEAD”, filed on December 18, 2017, which is hereby incorporated by reference in its entirety.
• the first plurality of through holes can provide an indirect path to prevent a line of sight from the upper chamber to the lower chamber and/or a light blocking structure may be used between the plasma and the gas distribution device if needed for a particular application.
• the purge gas is supplied while the treatment gas is supplied to create positive pressure and prevent the treatment gas from flowing into the upper chamber.
• a method 600 for treating a substrate is shown.
• a substrate is arranged in a processing chamber.
• purge gas such as He is supplied to purge the processing chamber for a predetermined period.
• a predetermined amount of treatment gas is supplied to allow saturation and adsorption on the surface of the substrate.
• the treatment gas is selected from molecular oxygen (O2), hydrochloric acid (HCI), molecular chlorine (CI2), nitrogen trifluoride (NF3), and molecular hydrogen (H2).
• O2 molecular oxygen
• HCI hydrochloric acid
• CI2 molecular chlorine
• NF3 nitrogen trifluoride
• H2 molecular hydrogen
• 1000 seem of O2 is supplied for 10 sec to allow O2 saturation and O2 adsorption on a surface of the substrate.
• Purge gas can be supplied to prevent back diffusion of oxygen into the upper chamber.
• the treatment gas (O2) is turned off at 614 and the processing chamber is purged with high flow He to remove residual O2 in the processing chamber. In some examples, 5000 seem of He are supplied for 10 sec.
• plasma is turned on after the purge.
• the metastable activated radical species are used to activate the adsorbed O2 on the surface of the substrate and oxidize the surface.
• the process can be repeated one or more times to adjust a thickness of the oxidation layer with monolayer control.
• the systems and methods described herein can be used to etch an exposed surface of a substrate at a monolayer level.
• the treatment gas may include HCI and the metastable activated radical species are used to surface activate chlorine to etch a monolayer.
• CI2, NF3 or H2 are adsorbed onto a surface of the substrate at a temperature lower than an etch reaction temperature (e.g. lower than about 300°C for CI2 or NF3 and lower than about 400°C for H2) and then the metastable activated radical species are used to surface activate chlorine, fluorine or hydrogen to provide a controlled etch of a monolayer.
• the phrase at least one of A, B, and C should be construed to mean a logical (A OR B OR C), using a non-exclusive logical OR, and should not be construed to mean“at least one of A, at least one of B, and at least one of C.”
• a controller is part of a system, which may be part of the above-described examples.
• Such systems can comprise semiconductor processing equipment, including a processing tool or tools, chamber or chambers, a platform or platforms for processing, and/or specific processing components (a wafer pedestal, a gas flow system, etc.).
• These systems may be integrated with electronics for controlling their operation before, during, and after processing of a semiconductor wafer or substrate.
• the electronics may be referred to as the“controller,” which may control various components or subparts of the system or systems.
• the controller may be programmed to control any of the processes disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and/or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, positional and operation settings, wafer transfers into and out of a tool and other transfer tools and/or load locks connected to or interfaced with a specific system.
• temperature settings e.g., heating and/or cooling
• RF radio frequency
• the controller may be defined as electronics having various integrated circuits, logic, memory, and/or software that receive instructions, issue instructions, control operation, enable cleaning operations, enable endpoint measurements, and the like.
• the integrated circuits may include chips in the form of firmware that store program instructions, digital signal processors (DSPs), chips defined as application specific integrated circuits (ASICs), and/or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software).
• Program instructions may be instructions communicated to the controller in the form of various individual settings (or program files), defining operational parameters for carrying out a particular process on or for a semiconductor wafer or to a system.
• the operational parameters may, in some embodiments, be part of a recipe defined by process engineers to accomplish one or more processing steps during the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and/or dies of a wafer.
• the controller in some implementations, may be a part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof.
• the controller may be in the“cloud” or all or a part of a fab host computer system, which can allow for remote access of the wafer processing.
• the computer may enable remote access to the system to monitor current progress of fabrication operations, examine a history of past fabrication operations, examine trends or performance metrics from a plurality of fabrication operations, to change parameters of current processing, to set processing steps to follow a current processing, or to start a new process.
• a remote computer e.g.
• a server can provide process recipes to a system over a network, which may include a local network or the Internet.
• the remote computer may include a user interface that enables entry or programming of parameters and/or settings, which are then communicated to the system from the remote computer.
• the controller receives instructions in the form of data, which specify parameters for each of the processing steps to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control.
• the controller may be distributed, such as by comprising one or more discrete controllers that are networked together and working towards a common purpose, such as the processes and controls described herein.
• An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber in communication with one or more integrated circuits located remotely (such as at the platform level or as part of a remote computer) that combine to control a process on the chamber.
• example systems may include a plasma etch chamber or module, a deposition chamber or module, a spin-rinse chamber or module, a metal plating chamber or module, a clean chamber or module, a bevel edge etch chamber or module, a physical vapor deposition (PVD) chamber or module, a chemical vapor deposition (CVD) chamber or module, an atomic layer deposition (ALD) chamber or module, an atomic layer etch (ALE) chamber or module, an ion implantation chamber or module, a track chamber or module, and any other semiconductor processing systems that may be associated or used in the fabrication and/or manufacturing of semiconductor wafers.
• PVD physical vapor deposition
• CVD chemical vapor deposition
• ALD atomic layer deposition
• ALE atomic layer etch
• the controller might communicate with one or more of other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout a factory, a main computer, another controller, or tools used in material transport that bring containers of wafers to and from tool locations and/or load ports in a semiconductor manufacturing factory.

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