JP2023547315A - プラズマエッチングリアクタ内への気相堆積プロセスの統合 - Google Patents

プラズマエッチングリアクタ内への気相堆積プロセスの統合 Download PDF

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JP2023547315A
JP2023547315A JP2023518343A JP2023518343A JP2023547315A JP 2023547315 A JP2023547315 A JP 2023547315A JP 2023518343 A JP2023518343 A JP 2023518343A JP 2023518343 A JP2023518343 A JP 2023518343A JP 2023547315 A JP2023547315 A JP 2023547315A
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reactor
deposition
gas
processing
processing chamber
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JP2023547315A5 (https=
Inventor
ハドソン・エリック・エイ．
セリーノ・アンドリュー・クラーク
ニコルソン・サド
チャンドラセクハラン・ラメシュ
ショエップ・アラン・エム．
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2002—Controlling environment of sample
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2023518343A 2020-10-23 2021-10-22 プラズマエッチングリアクタ内への気相堆積プロセスの統合 Pending JP2023547315A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063198513P 2020-10-23 2020-10-23
US63/198,513 2020-10-23
PCT/US2021/056187 WO2022087365A1 (en) 2020-10-23 2021-10-22 Integration of vapor deposition process into plasma etch reactor

Publications (2)

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JP2023547315A true JP2023547315A (ja) 2023-11-10
JP2023547315A5 JP2023547315A5 (https=) 2024-10-31

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US (1) US20230260759A1 (https=)
JP (1) JP2023547315A (https=)
KR (1) KR20230088869A (https=)
WO (1) WO2022087365A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202449212A (zh) * 2022-12-28 2024-12-16 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 調整製程腔室之容積之方法及設備
US20250253157A1 (en) * 2024-02-01 2025-08-07 Tokyo Electron Limited Method for etching a pattern in a layer of a substrate

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10294307A (ja) * 1997-02-24 1998-11-04 F O I:Kk プラズマ処理装置
JP2000058298A (ja) * 1998-08-06 2000-02-25 Foi:Kk プラズマリアクタ
JP2001185500A (ja) * 1990-01-08 2001-07-06 Lsi Logic Corp Ｃｖｄチャンバを現場でエッチングして清浄化するための装置及び方法
JP2007138295A (ja) * 2005-11-18 2007-06-07 Tokyo Electron Ltd シングルチャンバ内で異なる堆積プロセスを実行する方法およびシステム
JP2007239103A (ja) * 2006-03-08 2007-09-20 Tokyo Electron Ltd 処理システムのためのシーリングのデバイスおよび方法
JP2011515855A (ja) * 2008-03-21 2011-05-19 アプライド マテリアルズ インコーポレイテッド 基板エッチングシステム及びプロセスの方法及び装置
JP2017157705A (ja) * 2016-03-02 2017-09-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP2018014427A (ja) * 2016-07-21 2018-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
US20190326122A1 (en) * 2018-04-23 2019-10-24 Samsung Display Co., Ltd. Deposition apparatus and deposition method
US20200105509A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Vacuum pump protection against deposition byproduct buildup

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US6350317B1 (en) * 1999-12-30 2002-02-26 Lam Research Corporation Linear drive system for use in a plasma processing system
JP2002270598A (ja) * 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置
JP2002280376A (ja) * 2001-03-22 2002-09-27 Research Institute Of Innovative Technology For The Earth Ｃｖｄ装置のクリーニング方法およびそのためのクリーニング装置
US6527911B1 (en) * 2001-06-29 2003-03-04 Lam Research Corporation Configurable plasma volume etch chamber
KR100446619B1 (ko) * 2001-12-14 2004-09-04 삼성전자주식회사 유도 결합 플라즈마 장치
JP3855081B2 (ja) * 2002-07-01 2006-12-06 株式会社日立国際電気 フッ素ガスによるクリーニング機構を備えたｃｖｄ装置およびｃｖｄ装置のフッ素ガスによるクリーニング方法
US7408225B2 (en) * 2003-10-09 2008-08-05 Asm Japan K.K. Apparatus and method for forming thin film using upstream and downstream exhaust mechanisms
JP4911984B2 (ja) * 2006-02-08 2012-04-04 東京エレクトロン株式会社 ガス供給装置，基板処理装置，ガス供給方法及びシャワーヘッド
KR101577474B1 (ko) * 2008-02-08 2015-12-14 램 리써치 코포레이션 플라즈마 프로세싱 장치용 rf 리턴 스트랩
EP2360292B1 (en) * 2010-02-08 2012-03-28 Roth & Rau AG Parallel plate reactor for uniform thin film deposition with reduced tool foot-print
JP5902896B2 (ja) * 2011-07-08 2016-04-13 東京エレクトロン株式会社 基板処理装置
US9396908B2 (en) * 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
US9184029B2 (en) * 2013-09-03 2015-11-10 Lam Research Corporation System, method and apparatus for coordinating pressure pulses and RF modulation in a small volume confined process reactor
US10431451B2 (en) * 2014-08-22 2019-10-01 Lam Research Corporation Methods and apparatuses for increasing reactor processing batch size
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US10734238B2 (en) * 2017-11-21 2020-08-04 Lam Research Corporation Atomic layer deposition and etch in a single plasma chamber for critical dimension control
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Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001185500A (ja) * 1990-01-08 2001-07-06 Lsi Logic Corp Ｃｖｄチャンバを現場でエッチングして清浄化するための装置及び方法
JPH10294307A (ja) * 1997-02-24 1998-11-04 F O I:Kk プラズマ処理装置
JP2000058298A (ja) * 1998-08-06 2000-02-25 Foi:Kk プラズマリアクタ
JP2007138295A (ja) * 2005-11-18 2007-06-07 Tokyo Electron Ltd シングルチャンバ内で異なる堆積プロセスを実行する方法およびシステム
JP2007239103A (ja) * 2006-03-08 2007-09-20 Tokyo Electron Ltd 処理システムのためのシーリングのデバイスおよび方法
JP2011515855A (ja) * 2008-03-21 2011-05-19 アプライド マテリアルズ インコーポレイテッド 基板エッチングシステム及びプロセスの方法及び装置
JP2017157705A (ja) * 2016-03-02 2017-09-07 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP2018014427A (ja) * 2016-07-21 2018-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラム
US20190326122A1 (en) * 2018-04-23 2019-10-24 Samsung Display Co., Ltd. Deposition apparatus and deposition method
US20200105509A1 (en) * 2018-09-28 2020-04-02 Lam Research Corporation Vacuum pump protection against deposition byproduct buildup

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Publication number Publication date
US20230260759A1 (en) 2023-08-17
WO2022087365A1 (en) 2022-04-28
KR20230088869A (ko) 2023-06-20

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