JP2023540213A5 - - Google Patents

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Publication number
JP2023540213A5
JP2023540213A5 JP2023513304A JP2023513304A JP2023540213A5 JP 2023540213 A5 JP2023540213 A5 JP 2023540213A5 JP 2023513304 A JP2023513304 A JP 2023513304A JP 2023513304 A JP2023513304 A JP 2023513304A JP 2023540213 A5 JP2023540213 A5 JP 2023540213A5
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JP
Japan
Prior art keywords
plenum
source chamber
radical
radical source
substrate holder
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2023513304A
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English (en)
Japanese (ja)
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JP2023540213A (ja
JP7692147B2 (ja
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Priority claimed from US17/003,734 external-priority patent/US11521834B2/en
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Publication of JP2023540213A publication Critical patent/JP2023540213A/ja
Publication of JP2023540213A5 publication Critical patent/JP2023540213A5/ja
Application granted granted Critical
Publication of JP7692147B2 publication Critical patent/JP7692147B2/ja
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JP2023513304A 2020-08-26 2021-08-17 基板を化学的に処理するためのプラズマ処理システム及び方法 Active JP7692147B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/003,734 2020-08-26
US17/003,734 US11521834B2 (en) 2020-08-26 2020-08-26 Plasma processing systems and methods for chemical processing a substrate
PCT/US2021/046224 WO2022046461A1 (en) 2020-08-26 2021-08-17 Plasma processing systems and methods for chemical processing a substrate

Publications (3)

Publication Number Publication Date
JP2023540213A JP2023540213A (ja) 2023-09-22
JP2023540213A5 true JP2023540213A5 (cg-RX-API-DMAC7.html) 2024-06-20
JP7692147B2 JP7692147B2 (ja) 2025-06-13

Family

ID=80355588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023513304A Active JP7692147B2 (ja) 2020-08-26 2021-08-17 基板を化学的に処理するためのプラズマ処理システム及び方法

Country Status (5)

Country Link
US (1) US11521834B2 (cg-RX-API-DMAC7.html)
JP (1) JP7692147B2 (cg-RX-API-DMAC7.html)
KR (1) KR102941913B1 (cg-RX-API-DMAC7.html)
TW (1) TWI912349B (cg-RX-API-DMAC7.html)
WO (1) WO2022046461A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102816359B1 (ko) * 2022-04-28 2025-06-02 아주대학교산학협력단 지르코니아 표면 처리방법
US12394600B2 (en) * 2023-04-28 2025-08-19 Tokyo Electron Limited Balanced RF resonant antenna system
JP7422448B1 (ja) 2023-10-20 2024-01-26 株式会社Dr.Visea プラズマ照射装置
US12580153B2 (en) 2024-01-12 2026-03-17 Tokyo Electron Limited Balanced resonator source for plasma processing

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JPH0791655B2 (ja) * 1990-08-01 1995-10-04 日電アネルバ株式会社 表面処理方法および装置
JP4073174B2 (ja) * 2001-03-26 2008-04-09 株式会社荏原製作所 中性粒子ビーム処理装置
JP4101089B2 (ja) * 2003-03-14 2008-06-11 株式会社荏原製作所 ビーム源及びビーム処理装置
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
JP4674512B2 (ja) * 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
JP2007266006A (ja) * 2007-06-20 2007-10-11 Hitachi Kokusai Electric Inc プラズマリアクター
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
JP4855506B2 (ja) 2009-09-15 2012-01-18 住友精密工業株式会社 プラズマエッチング装置
KR101495288B1 (ko) * 2012-06-04 2015-02-24 피에스케이 주식회사 기판 처리 장치 및 방법
JP6172660B2 (ja) * 2012-08-23 2017-08-02 東京エレクトロン株式会社 成膜装置、及び、低誘電率膜を形成する方法
TW201435138A (zh) 2012-12-21 2014-09-16 Applied Materials Inc 具高清洗效率的對稱氣體分配設備及方法
KR20140089458A (ko) * 2013-01-04 2014-07-15 피에스케이 주식회사 플라즈마 챔버 및 기판 처리 장치
US10580623B2 (en) * 2013-11-19 2020-03-03 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
CN105917748B (zh) * 2014-01-15 2019-07-26 盖列姆企业私人有限公司 用于减少薄膜中杂质的装置和方法
KR20180094109A (ko) * 2016-01-07 2018-08-22 어플라이드 머티어리얼스, 인코포레이티드 원격 플라즈마 소스 및 dc 전극을 구비하는 원자 층 에칭 시스템
JP6746209B2 (ja) * 2016-08-31 2020-08-26 株式会社ディスコ プラズマエッチング装置
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP2019075517A (ja) * 2017-10-19 2019-05-16 東京エレクトロン株式会社 処理装置及び拡散路を有する部材
SG11202005088WA (en) * 2017-12-27 2020-07-29 Mattson Tech Inc Plasma processing apparatus and methods
CN112673456B (zh) 2018-09-10 2025-05-13 朗姆研究公司 使用亚稳的活化自由基物质的原子层处理工艺
US11348784B2 (en) * 2019-08-12 2022-05-31 Beijing E-Town Semiconductor Technology Co., Ltd Enhanced ignition in inductively coupled plasmas for workpiece processing
US12110585B2 (en) * 2020-02-10 2024-10-08 Applied Materials, Inc. Process chamber and exhaust liner system therefor

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