JP7692147B2 - 基板を化学的に処理するためのプラズマ処理システム及び方法 - Google Patents

基板を化学的に処理するためのプラズマ処理システム及び方法 Download PDF

Info

Publication number
JP7692147B2
JP7692147B2 JP2023513304A JP2023513304A JP7692147B2 JP 7692147 B2 JP7692147 B2 JP 7692147B2 JP 2023513304 A JP2023513304 A JP 2023513304A JP 2023513304 A JP2023513304 A JP 2023513304A JP 7692147 B2 JP7692147 B2 JP 7692147B2
Authority
JP
Japan
Prior art keywords
plenum
radical source
source chamber
radical
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2023513304A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023540213A5 (cg-RX-API-DMAC7.html
JP2023540213A (ja
Inventor
ヴェンツェク，ピーター
ランジャン，アロック
充敬 大秦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JP2023540213A publication Critical patent/JP2023540213A/ja
Publication of JP2023540213A5 publication Critical patent/JP2023540213A5/ja
Application granted granted Critical
Publication of JP7692147B2 publication Critical patent/JP7692147B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
JP2023513304A 2020-08-26 2021-08-17 基板を化学的に処理するためのプラズマ処理システム及び方法 Active JP7692147B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17/003,734 2020-08-26
US17/003,734 US11521834B2 (en) 2020-08-26 2020-08-26 Plasma processing systems and methods for chemical processing a substrate
PCT/US2021/046224 WO2022046461A1 (en) 2020-08-26 2021-08-17 Plasma processing systems and methods for chemical processing a substrate

Publications (3)

Publication Number Publication Date
JP2023540213A JP2023540213A (ja) 2023-09-22
JP2023540213A5 JP2023540213A5 (cg-RX-API-DMAC7.html) 2024-06-20
JP7692147B2 true JP7692147B2 (ja) 2025-06-13

Family

ID=80355588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023513304A Active JP7692147B2 (ja) 2020-08-26 2021-08-17 基板を化学的に処理するためのプラズマ処理システム及び方法

Country Status (5)

Country Link
US (1) US11521834B2 (cg-RX-API-DMAC7.html)
JP (1) JP7692147B2 (cg-RX-API-DMAC7.html)
KR (1) KR102941913B1 (cg-RX-API-DMAC7.html)
TW (1) TWI912349B (cg-RX-API-DMAC7.html)
WO (1) WO2022046461A1 (cg-RX-API-DMAC7.html)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102816359B1 (ko) * 2022-04-28 2025-06-02 아주대학교산학협력단 지르코니아 표면 처리방법
US12394600B2 (en) * 2023-04-28 2025-08-19 Tokyo Electron Limited Balanced RF resonant antenna system
JP7422448B1 (ja) 2023-10-20 2024-01-26 株式会社Dr.Visea プラズマ照射装置
US12580153B2 (en) 2024-01-12 2026-03-17 Tokyo Electron Limited Balanced resonator source for plasma processing

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289583A (ja) 2001-03-26 2002-10-04 Ebara Corp ビーム処理装置
JP2004281231A (ja) 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP2007266006A (ja) 2007-06-20 2007-10-11 Hitachi Kokusai Electric Inc プラズマリアクター
JP2013251546A (ja) 2012-06-04 2013-12-12 Psk Inc 基板処理装置及び方法
JP2014132570A (ja) 2013-01-04 2014-07-17 Psk Inc プラズマチャンバー及び基板処理装置
US20150136325A1 (en) 2013-11-19 2015-05-21 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
JP2018037546A (ja) 2016-08-31 2018-03-08 株式会社ディスコ プラズマエッチング装置
JP2019503077A (ja) 2016-01-07 2019-01-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔プラズマ源及びｄｃ電極を伴う原子層エッチングシステム
US20210050213A1 (en) 2019-08-12 2021-02-18 Mattson Technology, Inc. Enhanced Ignition in Inductively Coupled Plasmas For Workpiece Processing

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0791655B2 (ja) * 1990-08-01 1995-10-04 日電アネルバ株式会社 表面処理方法および装置
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
JP4674512B2 (ja) * 2005-09-12 2011-04-20 パナソニック株式会社 プラズマ処理装置
US7942969B2 (en) * 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US8382939B2 (en) 2009-07-13 2013-02-26 Applied Materials, Inc. Plasma processing chamber with enhanced gas delivery
JP4855506B2 (ja) 2009-09-15 2012-01-18 住友精密工業株式会社 プラズマエッチング装置
JP6172660B2 (ja) * 2012-08-23 2017-08-02 東京エレクトロン株式会社 成膜装置、及び、低誘電率膜を形成する方法
TW201435138A (zh) 2012-12-21 2014-09-16 Applied Materials Inc 具高清洗效率的對稱氣體分配設備及方法
CN105917748B (zh) * 2014-01-15 2019-07-26 盖列姆企业私人有限公司 用于减少薄膜中杂质的装置和方法
US11694911B2 (en) 2016-12-20 2023-07-04 Lam Research Corporation Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead
JP2019075517A (ja) * 2017-10-19 2019-05-16 東京エレクトロン株式会社 処理装置及び拡散路を有する部材
SG11202005088WA (en) * 2017-12-27 2020-07-29 Mattson Tech Inc Plasma processing apparatus and methods
CN112673456B (zh) 2018-09-10 2025-05-13 朗姆研究公司 使用亚稳的活化自由基物质的原子层处理工艺
US12110585B2 (en) * 2020-02-10 2024-10-08 Applied Materials, Inc. Process chamber and exhaust liner system therefor

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002289583A (ja) 2001-03-26 2002-10-04 Ebara Corp ビーム処理装置
JP2004281231A (ja) 2003-03-14 2004-10-07 Ebara Corp ビーム源及びビーム処理装置
JP2007266006A (ja) 2007-06-20 2007-10-11 Hitachi Kokusai Electric Inc プラズマリアクター
JP2013251546A (ja) 2012-06-04 2013-12-12 Psk Inc 基板処理装置及び方法
JP2014132570A (ja) 2013-01-04 2014-07-17 Psk Inc プラズマチャンバー及び基板処理装置
US20150136325A1 (en) 2013-11-19 2015-05-21 Applied Materials, Inc. Plasma processing using multiple radio frequency power feeds for improved uniformity
JP2019503077A (ja) 2016-01-07 2019-01-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 遠隔プラズマ源及びｄｃ電極を伴う原子層エッチングシステム
JP2018037546A (ja) 2016-08-31 2018-03-08 株式会社ディスコ プラズマエッチング装置
US20210050213A1 (en) 2019-08-12 2021-02-18 Mattson Technology, Inc. Enhanced Ignition in Inductively Coupled Plasmas For Workpiece Processing

Also Published As

Publication number Publication date
US20220068601A1 (en) 2022-03-03
TW202226321A (zh) 2022-07-01
WO2022046461A1 (en) 2022-03-03
KR20230051219A (ko) 2023-04-17
JP2023540213A (ja) 2023-09-22
TWI912349B (zh) 2026-01-21
KR102941913B1 (ko) 2026-03-19
US11521834B2 (en) 2022-12-06

Similar Documents

Publication Publication Date Title
KR102941913B1 (ko) 플라즈마 처리 시스템 및 기판을 화학적으로 처리하는 방법
CN207705142U (zh) 电感耦合的等离子体源及包括其的半导体处理腔室
US6335293B1 (en) Systems and methods for two-sided etch of a semiconductor substrate
US11024486B2 (en) Semiconductor processing systems having multiple plasma configurations
CN100466161C (zh) 用于半导体处理的气体分配设备
JP4815533B2 (ja) プラズマ処理装置およびプラズマ処理方法
US6320320B1 (en) Method and apparatus for producing uniform process rates
US9595425B2 (en) Antenna, dielectric window, plasma processing apparatus and plasma processing method
KR100278232B1 (ko) 균일한 전기장이 유전체 창에 의해 유도되는 플라즈마 처리 장치 및 방법
KR101094124B1 (ko) 균일한 프로세스 레이트를 발생시키는 안테나
US5904780A (en) Plasma processing apparatus
US5591268A (en) Plasma process with radicals
JP2006332055A (ja) プラズマ処理チャンバ、プラズマ反応器、大気圧プラズマ処理システム及びプラズマ処理システム
JP3430959B2 (ja) 平面アンテナ部材、これを用いたプラズマ処理装置及びプラズマ処理方法
JP3907087B2 (ja) プラズマ処理装置
US7482757B2 (en) Inductively coupled high-density plasma source
US20250079178A1 (en) Remote source pulsing with advanced pulse control
TW202446170A (zh) 電漿處理設備及方法
WO2023239863A1 (en) Equipment and method for improved edge uniformity of plasma processing of wafers
US20010009177A1 (en) Systems and methods for two-sided etch of a semiconductor substrate
JP5568608B2 (ja) プラズマ処理装置
KR20240167073A (ko) 균일성이 개선된 플라즈마 샤워헤드
KR100862685B1 (ko) 다중 배열된 방전실을 갖는 플라즈마 반응기 및 이를이용한 플라즈마 처리 시스템
KR20210039759A (ko) 기판 처리 시스템
KR20250018803A (ko) 기판 처리 장치 및 플라즈마 발생 유닛

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240612

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240612

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20250107

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250121

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250417

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250430

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20250516

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250516

R150 Certificate of patent or registration of utility model

Ref document number: 7692147

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20260115