JP2023536549A - プリロードチャンバおよび半導体プロセスプラットフォーム - Google Patents
プリロードチャンバおよび半導体プロセスプラットフォーム Download PDFInfo
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- 230000036316 preload Effects 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims description 12
- 230000008569 process Effects 0.000 title claims description 8
- 238000012546 transfer Methods 0.000 claims abstract description 95
- 238000012545 processing Methods 0.000 claims abstract description 15
- 238000001816 cooling Methods 0.000 claims description 13
- 238000007789 sealing Methods 0.000 claims description 13
- 230000004308 accommodation Effects 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 238000004891 communication Methods 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 126
- 238000000605 extraction Methods 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber
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- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
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- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Abstract
Description
または、各搭載台が一体式構造を採用し、各搭載台に、ウェハ300とマニピュレータとを出し入れするための回避開口を設けてもよい。
110 チャンバ本体
111 収容キャビティ
112 蓋体
1121 第1の観察窓
1122 第2の観察窓
113 本体部
114 底板
1141 第1の接続ポート
1142 位置決め凸部
120 ウェハ支持フレーム
121 搭載台
121a 第1の搭載台
121b 第2の搭載台
1211 回避部
122 支持フレーム本体
1221 取り付け孔
130 固定部材
140 支持フレーム駆動装置
150 位置決め部材
160 第2の密封部材
200 真空搬送チャンバ
210 仕切弁
300 ウェハ
Claims (14)
- チャンバ本体と、ウェハ支持フレームとを含み、
前記チャンバ本体には収容キャビティが開設され、前記ウェハ支持フレームは前記収容キャビティ内に位置し、前記ウェハ支持フレームは、鉛直方向に沿って間隔を空けて設けられる、ウェハを搭載するための複数の搭載台と、前記複数の搭載台と接続される支持フレーム本体と、固定部材とを含み、前記複数の搭載台の少なくとも1つは、前記支持フレーム本体の上方に位置し、且つ前記固定部材を貫通させることができる回避部が開設され、前記固定部材は前記支持フレーム本体と前記チャンバ本体とを固定接続させる
ことを特徴とするプリロードチャンバ。 - 前記ウェハ支持フレームは少なくとも2つであり、且つ円周方向に沿って間隔を空けて設けられるとともに、各前記ウェハ支持フレームにおける各前記搭載台と、他の前記ウェハ支持フレームにおける各前記搭載台とは一対一で対応して同層に設置され、同一層の前記搭載台は前記ウェハを共同で支持する
ことを特徴とする請求項1に記載のプリロードチャンバ。 - 前記支持フレーム本体上であって、且つ前記回避部の下方に、取り付け孔が開設され、前記固定部材は締結ネジであり、前記締結ネジの一端は前記取り付け孔を貫通し、前記チャンバ本体にネジ接続される
ことを特徴とする請求項1または2に記載のプリロードチャンバ。 - 前記ウェハ支持フレームは、位置決め部材をさらに含み、且つ前記支持フレーム本体と、前記チャンバ本体とが互いに対向する表面に位置決め孔が対応してそれぞれ設けられ、前記位置決め部材の両端は、前記支持フレーム本体および前記チャンバ本体の前記位置決め孔にそれぞれ位置する
ことを特徴とする請求項1または2に記載のプリロードチャンバ。 - 前記チャンバ本体は、本体部と、底板と、蓋体とを含み、前記本体部内には鉛直方向に前記本体部を貫通する貫通キャビティが設けられ、前記蓋体と前記底板とは、それぞれ取り外し可能に前記本体部の上端面および下端面に設けられ、前記収容キャビティは前記蓋体の底面と、前記本体部の前記貫通キャビティを構成する内壁と、前記底板の上面とに共に囲まれて形成され、前記固定部材は前記支持フレーム本体と前記底板とを固定接続させる
ことを特徴とする請求項1または2に記載のプリロードチャンバ。 - 前記底板内には、前記搭載台に搭載されたウェハを冷却する冷却装置が設けられ、および/または、
前記底板内には、前記搭載台に搭載された前記ウェハを加熱する加熱装置が設けられる
ことを特徴とする請求項5に記載のプリロードチャンバ。 - 前記本体部の側壁には、対向して設置された大気ウェハ搬送口と真空ウェハ搬送口とが開設され、前記大気ウェハ搬送口と真空ウェハ搬送口とはいずれも前記収容キャビティと連通し、前記大気ウェハ搬送口の上面と前記真空ウェハ搬送口の上面とはいずれも前記蓋体の底面と面一であり、前記大気ウェハ搬送口の底面と前記真空ウェハ搬送口の底面とはいずれも前記底板の上面と面一である
ことを特徴とする請求項5に記載のプリロードチャンバ。 - 前記大気ウェハ搬送口の中心軸と前記真空ウェハ搬送口の中心軸との交点と、前記搭載台の前記ウェハを搭載するための搭載面の中心とを結ぶ線は、前記搭載面に対して垂直である
ことを特徴とする請求項7に記載のプリロードチャンバ。 - 前記蓋体には第1の観察窓が開設され、前記本体部の側壁には第2の観察窓が開設され、前記第1の観察窓と前記第2の観察窓とはいずれも前記収容キャビティ内の前記ウェハの位置を観察するために用いられる
ことを特徴とする請求項5に記載のプリロードチャンバ。 - 前記底板は前記貫通キャビティ内に位置し、前記底板の外周壁には位置決め凸部が設けられ、前記本体部の底壁には位置決め凹部が対応して設けられ、前記位置決め凸部と前記位置決め凹部との互いに対向する表面は当接し、前記位置決め凸部と前記本体部とは取り外し可能に接続される
ことを特徴とする請求項5に記載のプリロードチャンバ。 - 前記蓋体と前記本体部との互いに対向する表面の間には、第1の密封部材が設けられ、および/または、
前記位置決め凸部と前記位置決め凹部との互いに対向する表面の間には、第2の密封部材が設けられる
ことを特徴とする請求項10に記載のプリロードチャンバ。 - 真空搬送チャンバと、大気搬送チャンバと、少なくとも1つの請求項7から11のいずれか1項に記載のプリロードチャンバとを含み、前記真空搬送チャンバの搬送口と前記真空ウェハ搬送口とは連通し、前記大気搬送チャンバの搬送口と前記大気ウェハ搬送口とは連通する
ことを特徴とする半導体プロセスプラットフォーム。 - 前記真空搬送チャンバの搬送口の中心軸と、対応して連通する前記真空ウェハ搬送口の中心軸とは一致し、
前記大気搬送チャンバの搬送口の中心軸と、対応して連通する前記大気ウェハ搬送口の中心軸とは一致する
ことを特徴とする請求項12に記載の半導体プロセスプラットフォーム。 - 前記プリロードチャンバの数は2つであり、2つの前記プリロードチャンバの前記大気ウェハ搬送口の中心軸は平行である
ことを特徴とする請求項12または13に記載の半導体プロセスプラットフォーム。
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CN202011023326.8 | 2020-09-25 | ||
PCT/CN2021/119014 WO2022063052A1 (zh) | 2020-09-25 | 2021-09-17 | 预装载腔室及半导体工艺平台 |
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CN112941624B (zh) * | 2021-02-20 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 腔室及半导体制造设备 |
CN114941124B (zh) * | 2022-06-01 | 2024-04-30 | 江苏邑文微电子科技有限公司 | 一种真空晶圆镀膜装置 |
CN115418630A (zh) * | 2022-07-19 | 2022-12-02 | 江苏晋誉达半导体股份有限公司 | 一种化学气相沉积设备的硅片连续反应冷却装置 |
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US20050129489A1 (en) * | 2003-11-12 | 2005-06-16 | Quan Yong C. | Load lock and load lock chamber using the same |
JP2011503837A (ja) * | 2007-05-18 | 2011-01-27 | ブルックス オートメーション インコーポレイテッド | ロードロック高速排気および通気 |
WO2019221986A1 (en) * | 2018-05-18 | 2019-11-21 | Applied Materials, Inc. | Dual load lock chamber |
Also Published As
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TW202213589A (zh) | 2022-04-01 |
CN112151431A (zh) | 2020-12-29 |
WO2022063052A1 (zh) | 2022-03-31 |
JP7402380B2 (ja) | 2023-12-20 |
CN112151431B (zh) | 2023-07-11 |
TWI798838B (zh) | 2023-04-11 |
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