JP2023534961A5 - - Google Patents
Info
- Publication number
- JP2023534961A5 JP2023534961A5 JP2023502905A JP2023502905A JP2023534961A5 JP 2023534961 A5 JP2023534961 A5 JP 2023534961A5 JP 2023502905 A JP2023502905 A JP 2023502905A JP 2023502905 A JP2023502905 A JP 2023502905A JP 2023534961 A5 JP2023534961 A5 JP 2023534961A5
- Authority
- JP
- Japan
- Prior art keywords
- optionally substituted
- tantalum
- organometallic compound
- radiation
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062705853P | 2020-07-17 | 2020-07-17 | |
| US62/705,853 | 2020-07-17 | ||
| PCT/US2021/042104 WO2022016124A1 (en) | 2020-07-17 | 2021-07-16 | Photoresists containing tantalum |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023534961A JP2023534961A (ja) | 2023-08-15 |
| JP2023534961A5 true JP2023534961A5 (https=) | 2024-07-19 |
| JP7774611B2 JP7774611B2 (ja) | 2025-11-21 |
Family
ID=79555033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023502905A Active JP7774611B2 (ja) | 2020-07-17 | 2021-07-16 | 被膜を形成するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230288798A1 (https=) |
| JP (1) | JP7774611B2 (https=) |
| KR (1) | KR102846049B1 (https=) |
| CN (1) | CN116134381A (https=) |
| TW (1) | TWI912334B (https=) |
| WO (1) | WO2022016124A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| CN113039486B (zh) | 2018-11-14 | 2024-11-12 | 朗姆研究公司 | 可用于下一代光刻法中的硬掩模制作方法 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| KR20250160237A (ko) | 2019-06-28 | 2025-11-11 | 램 리써치 코포레이션 | 복수의 패터닝 복사-흡수 엘리먼트들 및/또는 수직 조성 경사를 갖는 포토레지스트 |
| SG11202108851RA (en) | 2020-01-15 | 2021-09-29 | Lam Res Corp | Underlayer for photoresist adhesion and dose reduction |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| EP4078292A4 (en) | 2020-07-07 | 2023-11-22 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US20230107357A1 (en) | 2020-11-13 | 2023-04-06 | Lam Research Corporation | Process tool for dry removal of photoresist |
| JP7681106B2 (ja) * | 2020-12-08 | 2025-05-21 | ラム リサーチ コーポレーション | 有機蒸気によるフォトレジストの現像 |
| JP2025519455A (ja) * | 2022-06-06 | 2025-06-26 | インプリア・コーポレイション | 酸化性ハロゲン供与環境における有機金属レジストのガスに基づく現像 |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| US20240141497A1 (en) * | 2022-10-26 | 2024-05-02 | Applied Materials, Inc. | Dielectric film surface restoration with reductive plasma |
| CN120530478A (zh) * | 2023-01-27 | 2025-08-22 | 东京毅力科创株式会社 | 基板处理方法及基板处理系统 |
| US20240393684A1 (en) * | 2023-05-23 | 2024-11-28 | Samsung Sdi Co., Ltd. | Method of forming patterns |
| JPWO2024242120A1 (https=) * | 2023-05-24 | 2024-11-28 | ||
| JPWO2024242121A1 (https=) * | 2023-05-24 | 2024-11-28 | ||
| KR20250009842A (ko) * | 2023-07-11 | 2025-01-20 | 광주과학기술원 | 건식 현상이 가능한 포토레지스트 조성물 |
| JP7852072B2 (ja) | 2023-07-27 | 2026-04-27 | ラム リサーチ コーポレーション | 金属含有フォトレジストのためのオールインワン乾式現像 |
| US20260099096A1 (en) * | 2024-10-07 | 2026-04-09 | Applied Materials, Inc. | Batch processing tool for dry develop of extreme ultra violet (euv) resist layer |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102112654B (zh) * | 2008-08-01 | 2013-03-20 | 乔治洛德方法研究和开发液化空气有限公司 | 在基质上形成含钽层的方法 |
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| EP2729844B1 (en) * | 2011-07-08 | 2021-07-28 | ASML Netherlands B.V. | Lithographic patterning process and resists to use therein |
| US8703386B2 (en) * | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| US9324606B2 (en) * | 2014-01-09 | 2016-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned repairing process for barrier layer |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| US9922839B2 (en) * | 2015-06-23 | 2018-03-20 | Lam Research Corporation | Low roughness EUV lithography |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| KR102147108B1 (ko) * | 2016-06-02 | 2020-08-25 | 후지필름 가부시키가이샤 | 적층체의 제조 방법, 반도체 소자의 제조 방법 및 적층체 |
| JP2018017780A (ja) * | 2016-07-25 | 2018-02-01 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
| US10494715B2 (en) * | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| KR20200144580A (ko) * | 2018-05-11 | 2020-12-29 | 램 리써치 코포레이션 | Euv 패터닝 가능한 하드 마스크들을 제조하기 위한 방법들 |
| KR102207893B1 (ko) * | 2018-05-25 | 2021-01-25 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
-
2021
- 2021-07-16 CN CN202180061016.1A patent/CN116134381A/zh active Pending
- 2021-07-16 JP JP2023502905A patent/JP7774611B2/ja active Active
- 2021-07-16 WO PCT/US2021/042104 patent/WO2022016124A1/en not_active Ceased
- 2021-07-16 US US18/005,328 patent/US20230288798A1/en not_active Abandoned
- 2021-07-16 KR KR1020237005181A patent/KR102846049B1/ko active Active
- 2021-07-19 TW TW110126442A patent/TWI912334B/zh active
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