JP2023534961A5 - - Google Patents
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- Publication number
- JP2023534961A5 JP2023534961A5 JP2023502905A JP2023502905A JP2023534961A5 JP 2023534961 A5 JP2023534961 A5 JP 2023534961A5 JP 2023502905 A JP2023502905 A JP 2023502905A JP 2023502905 A JP2023502905 A JP 2023502905A JP 2023534961 A5 JP2023534961 A5 JP 2023534961A5
- Authority
- JP
- Japan
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202062705853P | 2020-07-17 | 2020-07-17 | |
| US62/705,853 | 2020-07-17 | ||
| PCT/US2021/042104 WO2022016124A1 (en) | 2020-07-17 | 2021-07-16 | Photoresists containing tantalum |
Publications (4)
| Publication Number | Publication Date |
|---|---|
| JP2023534961A JP2023534961A (ja) | 2023-08-15 |
| JP2023534961A5 true JP2023534961A5 (https=) | 2024-07-19 |
| JPWO2022016124A5 JPWO2022016124A5 (https=) | 2024-07-19 |
| JP7774611B2 JP7774611B2 (ja) | 2025-11-21 |
Family
ID=79555033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023502905A Active JP7774611B2 (ja) | 2020-07-17 | 2021-07-16 | 被膜を形成するための方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230288798A1 (https=) |
| JP (1) | JP7774611B2 (https=) |
| KR (1) | KR102846049B1 (https=) |
| CN (1) | CN116134381A (https=) |
| TW (1) | TWI912334B (https=) |
| WO (1) | WO2022016124A1 (https=) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102678588B1 (ko) | 2018-11-14 | 2024-06-27 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| US12211691B2 (en) | 2018-12-20 | 2025-01-28 | Lam Research Corporation | Dry development of resists |
| TW202514246A (zh) | 2019-03-18 | 2025-04-01 | 美商蘭姆研究公司 | 基板處理方法與設備 |
| US12062538B2 (en) | 2019-04-30 | 2024-08-13 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| JP7618601B2 (ja) | 2019-06-28 | 2025-01-21 | ラム リサーチ コーポレーション | 複数のパターニング放射吸収元素および／または垂直組成勾配を備えたフォトレジスト |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| WO2022103764A1 (en) | 2020-11-13 | 2022-05-19 | Lam Research Corporation | Process tool for dry removal of photoresist |
| US12577466B2 (en) * | 2020-12-08 | 2026-03-17 | Lam Research Corporation | Photoresist development with organic vapor |
| WO2023239628A1 (en) * | 2022-06-06 | 2023-12-14 | Inpria Corporation | Gas-based development of organometallic resist in an oxidizing halogen-donating environment |
| KR102725782B1 (ko) | 2022-07-01 | 2024-11-05 | 램 리써치 코포레이션 | 에칭 정지 억제 (etch stop deterrence) 를 위한 금속 옥사이드 기반 포토레지스트의 순환적 현상 |
| US20240141497A1 (en) * | 2022-10-26 | 2024-05-02 | Applied Materials, Inc. | Dielectric film surface restoration with reductive plasma |
| KR20250140553A (ko) * | 2023-01-27 | 2025-09-25 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법 및 기판 처리 시스템 |
| US20240393684A1 (en) * | 2023-05-23 | 2024-11-28 | Samsung Sdi Co., Ltd. | Method of forming patterns |
| KR20260012803A (ko) * | 2023-05-24 | 2026-01-27 | 도오꾜오까고오교 가부시끼가이샤 | 패턴 형성 방법 및 금속 화합물 함유막용 처리액 |
| JPWO2024242120A1 (https=) * | 2023-05-24 | 2024-11-28 | ||
| KR20250009842A (ko) * | 2023-07-11 | 2025-01-20 | 광주과학기술원 | 건식 현상이 가능한 포토레지스트 조성물 |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
| US20260099096A1 (en) * | 2024-10-07 | 2026-04-09 | Applied Materials, Inc. | Batch processing tool for dry develop of extreme ultra violet (euv) resist layer |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101589777B1 (ko) * | 2008-08-01 | 2016-01-28 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 기재 상에 탄탈-함유 층의 형성 방법 |
| US9176377B2 (en) * | 2010-06-01 | 2015-11-03 | Inpria Corporation | Patterned inorganic layers, radiation based patterning compositions and corresponding methods |
| CN108594599B (zh) * | 2011-07-08 | 2022-04-22 | Asml荷兰有限公司 | 抗蚀剂材料、光刻图案化方法和氧化物的用途 |
| US8703386B2 (en) * | 2012-02-27 | 2014-04-22 | International Business Machines Corporation | Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications |
| US9324606B2 (en) * | 2014-01-09 | 2016-04-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Self-aligned repairing process for barrier layer |
| TWI639179B (zh) * | 2014-01-31 | 2018-10-21 | 美商蘭姆研究公司 | 真空整合硬遮罩製程及設備 |
| US9922839B2 (en) * | 2015-06-23 | 2018-03-20 | Lam Research Corporation | Low roughness EUV lithography |
| US9996004B2 (en) * | 2015-11-20 | 2018-06-12 | Lam Research Corporation | EUV photopatterning of vapor-deposited metal oxide-containing hardmasks |
| WO2017209176A1 (ja) * | 2016-06-02 | 2017-12-07 | 富士フイルム株式会社 | 積層体の製造方法、半導体素子の製造方法および積層体 |
| JP2018017780A (ja) * | 2016-07-25 | 2018-02-01 | Jsr株式会社 | 感放射線性組成物及びパターン形成方法 |
| US10494715B2 (en) * | 2017-04-28 | 2019-12-03 | Lam Research Corporation | Atomic layer clean for removal of photoresist patterning scum |
| EP3791231A4 (en) * | 2018-05-11 | 2022-01-26 | Lam Research Corporation | PROCESS FOR THE MANUFACTURE OF EUV SAMPLE HARD MASKS |
| KR102207893B1 (ko) * | 2018-05-25 | 2021-01-25 | 삼성에스디아이 주식회사 | 반도체 레지스트용 조성물 및 이를 이용한 패턴 형성 방법 |
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2021
- 2021-07-16 CN CN202180061016.1A patent/CN116134381A/zh active Pending
- 2021-07-16 WO PCT/US2021/042104 patent/WO2022016124A1/en not_active Ceased
- 2021-07-16 KR KR1020237005181A patent/KR102846049B1/ko active Active
- 2021-07-16 JP JP2023502905A patent/JP7774611B2/ja active Active
- 2021-07-16 US US18/005,328 patent/US20230288798A1/en not_active Abandoned
- 2021-07-19 TW TW110126442A patent/TWI912334B/zh active