JP2023522005A - コーティングされたセンサゾーンを有するレチクルポッド - Google Patents
コーティングされたセンサゾーンを有するレチクルポッド Download PDFInfo
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- JP2023522005A JP2023522005A JP2022562538A JP2022562538A JP2023522005A JP 2023522005 A JP2023522005 A JP 2023522005A JP 2022562538 A JP2022562538 A JP 2022562538A JP 2022562538 A JP2022562538 A JP 2022562538A JP 2023522005 A JP2023522005 A JP 2023522005A
- Authority
- JP
- Japan
- Prior art keywords
- pod
- cover
- baseplate
- reticle
- sensor zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 113
- 238000000576 coating method Methods 0.000 claims abstract description 76
- 230000003595 spectral effect Effects 0.000 claims abstract description 34
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000002310 reflectometry Methods 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 18
- 229910052804 chromium Inorganic materials 0.000 claims description 17
- 239000011651 chromium Substances 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052759 nickel Inorganic materials 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 11
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67353—Closed carriers specially adapted for a single substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67359—Closed carriers specially adapted for containing masks, reticles or pellicles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67366—Closed carriers characterised by materials, roughness, coatings or the like
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Packaging Frangible Articles (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
Description
本出願は、2020年4月17日に出願された米国仮出願第63/011,581号の利益および優先権を主張し、上記の開示は、あらゆる目的のためにその全体が参照により本明細書に組み込まれる。
態様1~9のいずれかは、態様10~16のいずれかと組み合わせることができることが理解される。
カバー表面を有するカバーであって、前記カバー表面は、カバー表面材料を含むカバーと、
1つまたは複数の個別のセンサゾーンであって、前記センサゾーンの各々は、反射材料を含み、前記1つまたは複数の個別のセンサゾーンは、前記ベースプレート表面および前記カバー表面の一方または両方に配置される、1つまたは複数の個別のセンサゾーンと
を備える、ポッド。
乾式コーティングプロセスを使用して、反射材料を前記レチクルポッドのベースプレートまたは前記レチクルポッドのカバーの一方の上の1つまたは複数の個別のセンサゾーンの各々に適用すること
を含む、方法。
Claims (19)
- ベースプレート表面を有するベースプレートであって、前記ベースプレート表面は、ベースプレート表面材料を含むベースプレートと、
カバー表面を有するカバーであって、前記カバー表面は、カバー表面材料を含むカバーと、
1つまたは複数の個別のセンサゾーンであって、前記センサゾーンの各々は、反射材料を含み、前記1つまたは複数の個別のセンサゾーンは、前記ベースプレート表面および前記カバー表面の一方または両方に配置される、1つまたは複数の個別のセンサゾーンと
を備える、ポッド。 - 前記ポッドは、EUVレチクルポッドである、請求項1に記載のポッド。
- 外側ポッドドームと、外側ポッド扉とをさらに備え、前記ポッドドームおよび前記ポッド扉は、前記扉が前記ポッドドームに取り付けられるときに前記ポッドドーム内に前記ベースプレートおよび前記カバーを収納するように構成される、請求項2に記載のポッド。
- 前記反射材料は、880nmの波長で約50%~約70%のスペクトル反射率を有する、請求項1に記載のポッド。
- 前記反射材料は、前記ベースプレート表面材料の反射率とは異なる反射率を有する、請求項1に記載のポッド。
- 前記反射材料は、クロムを含む、請求項1に記載のポッド。
- 前記反射材料のみが、前記クロムを含む、請求項6に記載のポッド。
- 前記1つまたは複数のベースプレートセンサゾーンは、前記ポッドと検出器との間の距離が前記1つまたは複数のセンサゾーンを読み取ることから決定され得るように位置決めされる、請求項1に記載のポッド。
- 前記ベースプレート表面は、アルミニウムまたはニッケルの1つを含み、前記カバー表面は、アルミニウムまたはニッケルの1つである、請求項1に記載のポッド。
- 前記ベースプレート表面および前記カバー表面の各々は、前記個別のセンサゾーンの1つまたは複数を含む、請求項1に記載のポッド。
- レチクルポッドを製造する方法であって、
乾式コーティングプロセスを使用して、反射材料を前記レチクルポッドのベースプレートまたは前記レチクルポッドのカバーの一方の上の1つまたは複数の個別のセンサゾーンの各々に適用すること
を含む、方法。 - 前記反射材料は、前記ベースプレートのスペクトル反射率および前記カバーのスペクトル反射率とは異なるスペクトル反射率を有する、請求項11に記載の方法。
- 前記反射材料は、880nmの波長で約50%~約70%のスペクトル反射率を有する、請求項11に記載の方法。
- 前記ベースプレートまたは前記カバーの前記一方は、表面材料を含み、前記反射材料は、前記表面材料の反射率とは異なる反射率を有する、請求項11に記載の方法。
- コーティングを前記ベースプレートおよび前記カバーの前記一方に適用することをさらに含む、請求項11に記載の方法。
- 前記乾式コーティングプロセスは、物理気相堆積、スパッタ堆積、化学気相堆積、およびプラズマ強化化学気相堆積からなる群から選択される、請求項11に記載の方法。
- 前記1つまたは複数のセンサゾーンは、前記ポッドと検出器との間の距離が前記1つまたは複数のベースプレートセンサゾーンおよび前記1つまたは複数のカバーセンサゾーンを読み取ることから決定され得るように位置決めされる、請求項11に記載の方法。
- 前記乾式コーティングプロセスを使用して、前記反射材料を前記レチクルポッドの前記ベースプレートまたは前記レチクルポッドの前記カバー上の1つまたは複数の個別のセンサゾーンの各々に適用することをさらに含む、請求項11に記載の方法。
- 前記反射材料を研磨し、前記1つまたは複数の個別のセンサゾーンで所望の反射率を達成することをさらに含む、請求項18に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US202063011581P | 2020-04-17 | 2020-04-17 | |
US63/011,581 | 2020-04-17 | ||
PCT/US2021/027664 WO2021211955A1 (en) | 2020-04-17 | 2021-04-16 | Reticle pod having coated sensor zones |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2023522005A true JP2023522005A (ja) | 2023-05-26 |
Family
ID=78082209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022562538A Pending JP2023522005A (ja) | 2020-04-17 | 2021-04-16 | コーティングされたセンサゾーンを有するレチクルポッド |
Country Status (7)
Country | Link |
---|---|
US (1) | US20210327734A1 (ja) |
EP (1) | EP4136507A4 (ja) |
JP (1) | JP2023522005A (ja) |
KR (1) | KR20230004620A (ja) |
CN (1) | CN115552332A (ja) |
TW (1) | TW202144908A (ja) |
WO (1) | WO2021211955A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20240121325A (ko) * | 2021-12-21 | 2024-08-08 | 엔테그리스, 아이엔씨. | 접촉 표면 계면에서 상이한 재료를 갖는 레티클 포드 내부 포드 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3689949B2 (ja) * | 1995-12-19 | 2005-08-31 | 株式会社ニコン | 投影露光装置、及び該投影露光装置を用いたパターン形成方法 |
US6948619B2 (en) * | 2002-07-05 | 2005-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Reticle pod and reticle with cut areas |
JP4710308B2 (ja) * | 2004-10-29 | 2011-06-29 | 株式会社ニコン | レチクル搬送装置、露光装置、及びレチクルの搬送方法 |
US7607543B2 (en) * | 2005-02-27 | 2009-10-27 | Entegris, Inc. | Reticle pod with isolation system |
US20070076292A1 (en) * | 2005-09-27 | 2007-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fully electric field shielding reticle pod |
TWI417649B (zh) * | 2005-12-28 | 2013-12-01 | 尼康股份有限公司 | 十字標記運送裝置、曝光裝置、十字標記運送方法以及十字標記的處理方法 |
CN101568490B (zh) * | 2006-11-22 | 2016-04-13 | 安格斯公司 | 基底外壳的类金刚石碳涂层 |
WO2008071269A1 (en) * | 2006-12-15 | 2008-06-19 | Carl-Zeiss Sms Gmbh | Apparatus and method for mask metrology |
TWI414464B (zh) * | 2011-01-11 | 2013-11-11 | Gudeng Prec Ind Co Ltd | 具有固定結構之極紫外光光罩儲存傳送盒 |
CN104517878B (zh) * | 2013-09-26 | 2017-03-29 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 托盘原点定位系统及托盘原点定位方法 |
TWM496146U (zh) * | 2014-09-24 | 2015-02-21 | Gudeng Prec Ind Co Ltd | 具有標記之極紫外光光罩盒 |
KR102164153B1 (ko) * | 2016-04-06 | 2020-10-12 | 엔테그리스, 아이엔씨. | 윈도우 보유 스프링을 구비한 기판 용기 |
KR102127783B1 (ko) * | 2017-01-25 | 2020-06-30 | 구뎅 프리시젼 인더스트리얼 코포레이션 리미티드 | Euv 레티클 포드 |
TWI690771B (zh) * | 2018-01-11 | 2020-04-11 | 家登精密工業股份有限公司 | 光罩壓抵單元及應用其之極紫外光光罩容器 |
-
2021
- 2021-04-16 KR KR1020227039729A patent/KR20230004620A/ko active Search and Examination
- 2021-04-16 TW TW110113697A patent/TW202144908A/zh unknown
- 2021-04-16 US US17/232,581 patent/US20210327734A1/en active Pending
- 2021-04-16 EP EP21788320.6A patent/EP4136507A4/en active Pending
- 2021-04-16 JP JP2022562538A patent/JP2023522005A/ja active Pending
- 2021-04-16 WO PCT/US2021/027664 patent/WO2021211955A1/en unknown
- 2021-04-16 CN CN202180032956.8A patent/CN115552332A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
EP4136507A4 (en) | 2024-08-21 |
US20210327734A1 (en) | 2021-10-21 |
CN115552332A (zh) | 2022-12-30 |
EP4136507A1 (en) | 2023-02-22 |
TW202144908A (zh) | 2021-12-01 |
KR20230004620A (ko) | 2023-01-06 |
WO2021211955A1 (en) | 2021-10-21 |
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