JP2023520120A - 接合構造が積層されたマルチカラーｌｅｄのシステム及び方法 - Google Patents

接合構造が積層されたマルチカラーｌｅｄのシステム及び方法 Download PDF

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JP2023520120A
JP2023520120A JP2022549111A JP2022549111A JP2023520120A JP 2023520120 A JP2023520120 A JP 2023520120A JP 2022549111 A JP2022549111 A JP 2022549111A JP 2022549111 A JP2022549111 A JP 2022549111A JP 2023520120 A JP2023520120 A JP 2023520120A
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led
emitting layer
light
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JP2023520120A5 (enExample
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リ，キミン
スー，クンチャオ
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ジェイド バード ディスプレイ（シャンハイ） リミテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

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  • Electroluminescent Light Sources (AREA)
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JP2022549111A 2020-03-30 2021-03-30 接合構造が積層されたマルチカラーｌｅｄのシステム及び方法 Pending JP2023520120A (ja)

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US202063002092P 2020-03-30 2020-03-30
US63/002,092 2020-03-30
PCT/US2021/024873 WO2021202521A1 (en) 2020-03-30 2021-03-30 Systems and methods for multi-color led with stacked bonding structures

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JP2023520120A true JP2023520120A (ja) 2023-05-16
JP2023520120A5 JP2023520120A5 (enExample) 2024-03-21

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US (4) US12255185B2 (enExample)
EP (1) EP4128206A4 (enExample)
JP (1) JP2023520120A (enExample)
KR (1) KR20220162161A (enExample)
CN (2) CN115335889B (enExample)
AU (1) AU2021246026A1 (enExample)
DE (1) DE21780070T1 (enExample)
TW (1) TWI912299B (enExample)
WO (1) WO2021202521A1 (enExample)

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US12641941B2 (en) 2019-09-11 2026-05-26 Hue Inc. Multi-color LED pixel unit and micro-LED display panel
US11476299B2 (en) * 2020-08-31 2022-10-18 Hong Kong Beida Jade Bird Display Limited Double color micro LED display panel
TWI815330B (zh) * 2021-03-18 2023-09-11 汯益光學股份有限公司 堆疊式發光元件及其製造方法
US20230369304A1 (en) * 2022-05-11 2023-11-16 Seoul Viosys Co., Ltd. Pixel device and display apparatus having the same
CN115000118B (zh) * 2022-06-28 2024-12-31 安徽熙泰智能科技有限公司 有源寻址的micro LED元胞结构、其制备方法及micro LED器件
US20260006976A1 (en) * 2022-07-15 2026-01-01 Lg Electronics Inc. Semiconductor light-emitting device package and display device
JP2025526685A (ja) * 2022-08-12 2025-08-15 ジェイド バード ディスプレイ（シャンハイ） リミテッド 多色ｌｅｄ画素ユニットおよびマイクロｌｅｄディスプレイパネル
CN116247143A (zh) * 2022-09-08 2023-06-09 华灿光电（浙江）有限公司 三基色发光二极管、发光模块及其制备方法
TWI854577B (zh) * 2023-04-06 2024-09-01 國立清華大學 紅外光發光元件
WO2024229588A1 (en) * 2023-05-05 2024-11-14 Jade Bird Display (shanghai) Limited Micro led display panel
US20240395849A1 (en) * 2023-05-23 2024-11-28 Rayleigh Vision Limited Micro light-emitting diode panel structure
CN119604105B (zh) * 2023-09-07 2026-04-14 武汉华星光电半导体显示技术有限公司 显示面板
CN119630158B (zh) * 2023-09-12 2025-11-21 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN117012865B (zh) * 2023-09-27 2023-12-29 季华实验室 全彩Micro LED显示芯片及其制备方法
WO2025081418A1 (en) * 2023-10-19 2025-04-24 Jade Bird Display (shanghai) Limited A micro led display panel
CN119907389B (zh) * 2023-10-24 2025-11-25 武汉华星光电半导体显示技术有限公司 显示面板
CN119907388A (zh) * 2023-10-24 2025-04-29 京东方科技集团股份有限公司 发光芯片、显示装置和制造方法
CN122139464A (zh) * 2023-11-09 2026-06-02 上海显耀显示科技股份有限公司 微led、微led显示面板及外延结构
KR20250081955A (ko) * 2023-11-27 2025-06-09 삼성디스플레이 주식회사 표시 패널, 이를 포함하는 스마트 글라스, 및 이의 제조 방법

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JP2008147608A (ja) * 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
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JPWO2023181246A1 (enExample) * 2022-03-24 2023-09-28
JP7465612B2 (ja) 2022-03-24 2024-04-11 アルディーテック株式会社 半導体発光素子チップ集積装置およびその製造方法

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US12255185B2 (en) 2025-03-18
CN115335889B (zh) 2025-08-29
CN121078879A (zh) 2025-12-05
TW202145601A (zh) 2021-12-01
US20260005204A1 (en) 2026-01-01
DE21780070T1 (de) 2023-05-25
WO2021202521A1 (en) 2021-10-07
AU2021246026A1 (en) 2022-11-03
US20250183236A1 (en) 2025-06-05
TWI912299B (zh) 2026-01-21
CN115335889A (zh) 2022-11-11
KR20220162161A (ko) 2022-12-07
EP4128206A1 (en) 2023-02-08
US20250192116A1 (en) 2025-06-12
US20210305220A1 (en) 2021-09-30
EP4128206A4 (en) 2024-04-24

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