JP2023505782A5 - - Google Patents

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Publication number
JP2023505782A5
JP2023505782A5 JP2022534154A JP2022534154A JP2023505782A5 JP 2023505782 A5 JP2023505782 A5 JP 2023505782A5 JP 2022534154 A JP2022534154 A JP 2022534154A JP 2022534154 A JP2022534154 A JP 2022534154A JP 2023505782 A5 JP2023505782 A5 JP 2023505782A5
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JP
Japan
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JP2022534154A
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Japanese (ja)
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JP7662638B2 (ja
JP2023505782A (ja
JPWO2021118862A5 (https=
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Priority claimed from PCT/US2020/063142 external-priority patent/WO2021118862A2/en
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Publication of JPWO2021118862A5 publication Critical patent/JPWO2021118862A5/ja
Priority to JP2025061531A priority Critical patent/JP2025102932A/ja
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JP2022534154A 2019-12-13 2020-12-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化 Active JP7662638B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025061531A JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962948180P 2019-12-13 2019-12-13
US62/948,180 2019-12-13
US202062961358P 2020-01-15 2020-01-15
US62/961,358 2020-01-15
PCT/US2020/063142 WO2021118862A2 (en) 2019-12-13 2020-12-03 Multi-state pulsing for achieving a balance between bow control and mask selectivity

Related Child Applications (1)

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JP2025061531A Division JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

Publications (4)

Publication Number Publication Date
JP2023505782A JP2023505782A (ja) 2023-02-13
JP2023505782A5 true JP2023505782A5 (https=) 2024-11-19
JPWO2021118862A5 JPWO2021118862A5 (https=) 2024-11-19
JP7662638B2 JP7662638B2 (ja) 2025-04-15

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JP2022534154A Active JP7662638B2 (ja) 2019-12-13 2020-12-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化
JP2025061531A Pending JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

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JP2025061531A Pending JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

Country Status (5)

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US (2) US12217972B2 (https=)
JP (2) JP7662638B2 (https=)
KR (1) KR20220113502A (https=)
CN (1) CN114787972A (https=)
WO (1) WO2021118862A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114342049B (zh) * 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
US20230215694A1 (en) * 2021-02-05 2023-07-06 Lam Research Corporation Duty cycle control to achieve uniformity
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US12456607B2 (en) * 2021-12-15 2025-10-28 Applied Materials, Inc. Auxiliary plasma source for robust ignition and restrikes in a plasma chamber
WO2023136913A1 (en) * 2022-01-14 2023-07-20 Lam Research Corporation Method to control etch profile by rf pulsing
WO2024107552A1 (en) * 2022-11-16 2024-05-23 Lam Research Corporation Systems and methods for driving passivation to increase an etch rate
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
JP6002556B2 (ja) 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN105453230B (zh) 2013-08-16 2019-06-14 应用材料公司 用六氟化钨(wf6)回蚀进行钨沉积
JP6320248B2 (ja) 2014-03-04 2018-05-09 東京エレクトロン株式会社 プラズマエッチング方法
US9691625B2 (en) 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP6568822B2 (ja) 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
US10553465B2 (en) 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
US10347498B2 (en) 2016-12-31 2019-07-09 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods of minimizing plasma-induced sidewall damage during low K etch processes
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10002746B1 (en) 2017-09-13 2018-06-19 Lam Research Corporation Multi regime plasma wafer processing to increase directionality of ions
JP7366918B2 (ja) 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch

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