JP7662638B2 - 反り制御とマスク選択比とのバランスを達成するための多状態パルス化 - Google Patents

反り制御とマスク選択比とのバランスを達成するための多状態パルス化 Download PDF

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JP7662638B2
JP7662638B2 JP2022534154A JP2022534154A JP7662638B2 JP 7662638 B2 JP7662638 B2 JP 7662638B2 JP 2022534154 A JP2022534154 A JP 2022534154A JP 2022534154 A JP2022534154 A JP 2022534154A JP 7662638 B2 JP7662638 B2 JP 7662638B2
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JP2023505782A5 (https=
JP2023505782A (ja
JPWO2021118862A5 (https=
Inventor
ドール・ニヒル
ウォン・マーレット・ティンロク
ハドソン・エリック
ヤオ・シャオキャン
リー・サンホン
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Electrophonic Musical Instruments (AREA)
JP2022534154A 2019-12-13 2020-12-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化 Active JP7662638B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025061531A JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962948180P 2019-12-13 2019-12-13
US62/948,180 2019-12-13
US202062961358P 2020-01-15 2020-01-15
US62/961,358 2020-01-15
PCT/US2020/063142 WO2021118862A2 (en) 2019-12-13 2020-12-03 Multi-state pulsing for achieving a balance between bow control and mask selectivity

Related Child Applications (1)

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JP2025061531A Division JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

Publications (4)

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JP2023505782A JP2023505782A (ja) 2023-02-13
JP2023505782A5 JP2023505782A5 (https=) 2024-11-19
JPWO2021118862A5 JPWO2021118862A5 (https=) 2024-11-19
JP7662638B2 true JP7662638B2 (ja) 2025-04-15

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JP2022534154A Active JP7662638B2 (ja) 2019-12-13 2020-12-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化
JP2025061531A Pending JP2025102932A (ja) 2019-12-13 2025-04-03 反り制御とマスク選択比とのバランスを達成するための多状態パルス化

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US (2) US12217972B2 (https=)
JP (2) JP7662638B2 (https=)
KR (1) KR20220113502A (https=)
CN (1) CN114787972A (https=)
WO (1) WO2021118862A2 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114342049B (zh) * 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
US20230215694A1 (en) * 2021-02-05 2023-07-06 Lam Research Corporation Duty cycle control to achieve uniformity
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US12456607B2 (en) * 2021-12-15 2025-10-28 Applied Materials, Inc. Auxiliary plasma source for robust ignition and restrikes in a plasma chamber
WO2023136913A1 (en) * 2022-01-14 2023-07-20 Lam Research Corporation Method to control etch profile by rf pulsing
WO2024107552A1 (en) * 2022-11-16 2024-05-23 Lam Research Corporation Systems and methods for driving passivation to increase an etch rate
CN119170473B (zh) * 2023-06-19 2025-10-10 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法

Citations (7)

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JP2014107363A (ja) 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2015181143A (ja) 2014-03-04 2015-10-15 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2017112350A (ja) 2015-11-04 2017-06-22 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ電力レベルに応じて二様態プロセスガス組成を使用するプラズマエッチングのための方法及びシステム
JP2017208387A (ja) 2016-05-16 2017-11-24 東京エレクトロン株式会社 エッチング方法
JP2019053978A (ja) 2017-09-13 2019-04-04 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理
WO2019178030A1 (en) 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch

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US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
CN105453230B (zh) 2013-08-16 2019-06-14 应用材料公司 用六氟化钨(wf6)回蚀进行钨沉积
US10553465B2 (en) 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
US10347498B2 (en) 2016-12-31 2019-07-09 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods of minimizing plasma-induced sidewall damage during low K etch processes
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014107363A (ja) 2012-11-27 2014-06-09 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2015181143A (ja) 2014-03-04 2015-10-15 東京エレクトロン株式会社 プラズマエッチング方法及びプラズマエッチング装置
JP2017112350A (ja) 2015-11-04 2017-06-22 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ電力レベルに応じて二様態プロセスガス組成を使用するプラズマエッチングのための方法及びシステム
JP2017208387A (ja) 2016-05-16 2017-11-24 東京エレクトロン株式会社 エッチング方法
JP2019053978A (ja) 2017-09-13 2019-04-04 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理
WO2019178030A1 (en) 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch

Also Published As

Publication number Publication date
KR20220113502A (ko) 2022-08-12
CN114787972A (zh) 2022-07-22
US12217972B2 (en) 2025-02-04
JP2025102932A (ja) 2025-07-08
JP2023505782A (ja) 2023-02-13
WO2021118862A2 (en) 2021-06-17
US20250140565A1 (en) 2025-05-01
US20230005717A1 (en) 2023-01-05
WO2021118862A3 (en) 2021-10-07

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