CN114787972A - 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化 - Google Patents

用于在弓形控制和掩模选择之间取得平衡的多态脉冲化 Download PDF

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Publication number
CN114787972A
CN114787972A CN202080086253.9A CN202080086253A CN114787972A CN 114787972 A CN114787972 A CN 114787972A CN 202080086253 A CN202080086253 A CN 202080086253A CN 114787972 A CN114787972 A CN 114787972A
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China
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state
signal
power level
primary
during
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CN202080086253.9A
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English (en)
Chinese (zh)
Inventor
尼基尔·多乐
梅雷特·廷洛克·王
埃里克·赫德森
姚小强
李尚宪
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Lam Research Corp
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Lam Research Corp
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Publication of CN114787972A publication Critical patent/CN114787972A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146—Amplitude modulation, includes pulsing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3346—Selectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Magnetic Resonance Imaging Apparatus (AREA)
  • Electrophonic Musical Instruments (AREA)
CN202080086253.9A 2019-12-13 2020-12-03 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化 Pending CN114787972A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962948180P 2019-12-13 2019-12-13
US62/948,180 2019-12-13
US202062961358P 2020-01-15 2020-01-15
US62/961,358 2020-01-15
PCT/US2020/063142 WO2021118862A2 (en) 2019-12-13 2020-12-03 Multi-state pulsing for achieving a balance between bow control and mask selectivity

Publications (1)

Publication Number Publication Date
CN114787972A true CN114787972A (zh) 2022-07-22

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CN202080086253.9A Pending CN114787972A (zh) 2019-12-13 2020-12-03 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化

Country Status (5)

Country Link
US (2) US12217972B2 (https=)
JP (2) JP7662638B2 (https=)
KR (1) KR20220113502A (https=)
CN (1) CN114787972A (https=)
WO (1) WO2021118862A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024260306A1 (zh) * 2023-06-19 2024-12-26 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114342049B (zh) * 2019-08-22 2025-08-19 朗姆研究公司 用于控制掩模形状并打破选择性与工艺裕度权衡的多态rf脉冲
US12609283B2 (en) * 2020-06-15 2026-04-21 Lam Research Corporation Control of pulsing frequencies and duty cycles of parameters of RF signals
US20230215694A1 (en) * 2021-02-05 2023-07-06 Lam Research Corporation Duty cycle control to achieve uniformity
US11694876B2 (en) * 2021-12-08 2023-07-04 Applied Materials, Inc. Apparatus and method for delivering a plurality of waveform signals during plasma processing
US12456607B2 (en) * 2021-12-15 2025-10-28 Applied Materials, Inc. Auxiliary plasma source for robust ignition and restrikes in a plasma chamber
WO2023136913A1 (en) * 2022-01-14 2023-07-20 Lam Research Corporation Method to control etch profile by rf pulsing
WO2024107552A1 (en) * 2022-11-16 2024-05-23 Lam Research Corporation Systems and methods for driving passivation to increase an etch rate

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
JP6002556B2 (ja) 2012-11-27 2016-10-05 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
CN105453230B (zh) 2013-08-16 2019-06-14 应用材料公司 用六氟化钨(wf6)回蚀进行钨沉积
JP6320248B2 (ja) 2014-03-04 2018-05-09 東京エレクトロン株式会社 プラズマエッチング方法
US9691625B2 (en) 2015-11-04 2017-06-27 Lam Research Corporation Methods and systems for plasma etching using bi-modal process gas composition responsive to plasma power level
JP6568822B2 (ja) 2016-05-16 2019-08-28 東京エレクトロン株式会社 エッチング方法
US10553465B2 (en) 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
US10347498B2 (en) 2016-12-31 2019-07-09 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Methods of minimizing plasma-induced sidewall damage during low K etch processes
JP6883495B2 (ja) 2017-09-04 2021-06-09 東京エレクトロン株式会社 エッチング方法
US10002746B1 (en) 2017-09-13 2018-06-19 Lam Research Corporation Multi regime plasma wafer processing to increase directionality of ions
JP7366918B2 (ja) 2018-03-16 2023-10-23 ラム リサーチ コーポレーション 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質
US10504744B1 (en) 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024260306A1 (zh) * 2023-06-19 2024-12-26 北京北方华创微电子装备有限公司 半导体工艺设备及其脉冲调节等离子体方法

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Publication number Publication date
KR20220113502A (ko) 2022-08-12
JP7662638B2 (ja) 2025-04-15
US12217972B2 (en) 2025-02-04
JP2025102932A (ja) 2025-07-08
JP2023505782A (ja) 2023-02-13
WO2021118862A2 (en) 2021-06-17
US20250140565A1 (en) 2025-05-01
US20230005717A1 (en) 2023-01-05
WO2021118862A3 (en) 2021-10-07

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