JP2023504353A5 - - Google Patents

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Publication number
JP2023504353A5
JP2023504353A5 JP2022527095A JP2022527095A JP2023504353A5 JP 2023504353 A5 JP2023504353 A5 JP 2023504353A5 JP 2022527095 A JP2022527095 A JP 2022527095A JP 2022527095 A JP2022527095 A JP 2022527095A JP 2023504353 A5 JP2023504353 A5 JP 2023504353A5
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JP
Japan
Prior art keywords
layer
oxygen radicals
substrate
fluid layer
silicon
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Application number
JP2022527095A
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English (en)
Japanese (ja)
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JP7623374B2 (ja
JP2023504353A (ja
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Priority claimed from US16/708,026 external-priority patent/US20210175075A1/en
Application filed filed Critical
Publication of JP2023504353A publication Critical patent/JP2023504353A/ja
Publication of JP2023504353A5 publication Critical patent/JP2023504353A5/ja
Application granted granted Critical
Publication of JP7623374B2 publication Critical patent/JP7623374B2/ja
Active legal-status Critical Current
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JP2022527095A 2019-12-09 2020-11-30 酸素ラジカル支援による誘電体膜の高密度化 Active JP7623374B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16/708,026 2019-12-09
US16/708,026 US20210175075A1 (en) 2019-12-09 2019-12-09 Oxygen radical assisted dielectric film densification
PCT/US2020/062540 WO2021118815A1 (en) 2019-12-09 2020-11-30 Oxygen radical assisted dielectric film densification

Publications (3)

Publication Number Publication Date
JP2023504353A JP2023504353A (ja) 2023-02-03
JP2023504353A5 true JP2023504353A5 (https=) 2023-12-07
JP7623374B2 JP7623374B2 (ja) 2025-01-28

Family

ID=76209063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022527095A Active JP7623374B2 (ja) 2019-12-09 2020-11-30 酸素ラジカル支援による誘電体膜の高密度化

Country Status (6)

Country Link
US (1) US20210175075A1 (https=)
JP (1) JP7623374B2 (https=)
KR (1) KR102907137B1 (https=)
CN (1) CN114730697A (https=)
TW (1) TW202124764A (https=)
WO (1) WO2021118815A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10755922B2 (en) * 2018-07-03 2020-08-25 Asm Ip Holding B.V. Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition
US11862699B2 (en) * 2020-08-05 2024-01-02 Changxin Memory Technologies, Inc. Semiconductor structure and method for manufacturing same
US11551926B2 (en) * 2021-01-22 2023-01-10 Micron Technology, Inc. Methods of forming a microelectronic device, and related systems and additional methods
JP2023130026A (ja) * 2022-03-07 2023-09-20 東京エレクトロン株式会社 埋込方法及び処理システム
CN120712642A (zh) * 2023-06-07 2025-09-26 株式会社国际电气 处理方法、半导体装置的制造方法、处理装置以及程序

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JP4221526B2 (ja) * 2003-03-26 2009-02-12 キヤノンアネルバ株式会社 金属酸化物を基板表面上に形成する成膜方法
US7989365B2 (en) * 2009-08-18 2011-08-02 Applied Materials, Inc. Remote plasma source seasoning
KR101030997B1 (ko) * 2009-10-16 2011-04-25 주식회사 아토 증착 장치 및 이를 이용한 갭필 방법
SG182333A1 (en) * 2010-01-07 2012-08-30 Applied Materials Inc In-situ ozone cure for radical-component cvd
US8846536B2 (en) * 2012-03-05 2014-09-30 Novellus Systems, Inc. Flowable oxide film with tunable wet etch rate
US20130288485A1 (en) * 2012-04-30 2013-10-31 Applied Materials, Inc. Densification for flowable films
US20150118863A1 (en) * 2013-10-25 2015-04-30 Lam Research Corporation Methods and apparatus for forming flowable dielectric films having low porosity
US9847222B2 (en) * 2013-10-25 2017-12-19 Lam Research Corporation Treatment for flowable dielectric deposition on substrate surfaces
US9508561B2 (en) * 2014-03-11 2016-11-29 Applied Materials, Inc. Methods for forming interconnection structures in an integrated cluster system for semicondcutor applications
US9412581B2 (en) * 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US20160079034A1 (en) * 2014-09-12 2016-03-17 Applied Materials Inc. Flowable film properties tuning using implantation
US9896326B2 (en) * 2014-12-22 2018-02-20 Applied Materials, Inc. FCVD line bending resolution by deposition modulation
US9777378B2 (en) * 2015-01-07 2017-10-03 Applied Materials, Inc. Advanced process flow for high quality FCVD films
CN117524976A (zh) * 2017-05-13 2024-02-06 应用材料公司 用于高质量间隙填充方案的循环可流动沉积和高密度等离子体处理处理
US10600684B2 (en) * 2017-12-19 2020-03-24 Applied Materials, Inc. Ultra-thin diffusion barriers
CN111684566A (zh) * 2018-01-26 2020-09-18 应用材料公司 用于氮化硅薄膜的处理方法
US12266574B2 (en) * 2021-08-06 2025-04-01 Taiwan Semiconductor Manufacturing Co., Ltd. Flowable chemical vapor deposition (FCVD) using multi-step anneal treatment and devices thereof

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