JP2023502989A - 窒化インジウムガリウム構造およびデバイス - Google Patents
窒化インジウムガリウム構造およびデバイス Download PDFInfo
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- 229910052738 indium Inorganic materials 0.000 title claims description 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 189
- 229910002601 GaN Inorganic materials 0.000 claims description 183
- 239000004065 semiconductor Substances 0.000 claims description 167
- 239000000758 substrate Substances 0.000 claims description 87
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 25
- 229910052594 sapphire Inorganic materials 0.000 claims description 11
- 239000010980 sapphire Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 7
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 16
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- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004581 coalescence Methods 0.000 description 4
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
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- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 229910005544 NiAg Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
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- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
xmin = -6.046E-07λ2+ 1.837E-03λ - 6.917E-01, (λ ≧ 440 nm) EQN.1
xmax = -6.152E-07λ2+ 1.847E-03λ - 6.142E-01, (λ ≧ 440 nm) EQN.2
で定義される。
amin = -2.067E-07λ2 + 6.366E-04λ - 2.951, (λ ≧ 440 nm) EQN.3
amax = -2.190E-07λ2 + 6.575E-04λ - 2.970, (λ ≧ 440 nm) EQN.4
で定義される。
本発明は、以下の態様によってさらに定められる。
Claims (23)
- (a)InxGa1-xN(0≦x<1)とウルツ鉱型III族窒化物結晶構造とを含むシード領域と;
(b)前記ウルツ鉱型III族窒化物構造の(0001)面に平行で、前記シード領域と交差する第1の平面であって;
前記第1の平面とシード領域の第1の縁との交差が、InxGa1-xN/InyGa1-yNヘテロ接合の位置となり、0<y≦1かつy>xであり;
前記InxGa1-xN/InyGa1-yNヘテロ接合が、前記シード領域の第1の結晶学的平面と共平面である、第1の平面と;
(c)前記ウルツ鉱型III族窒化物結晶構造の(0001)面に平行で、前記シード領域の第2の縁に交差するいずれかの第2の平面であって、III族窒化物ヘテロ接合の位置となり、前記III族窒化物ヘテロ接合が、前記シード領域の第2の結晶学的平面と共平面である、第2の平面と;
(d)前記シード領域の上に重なる(0001)InGaN領域であって、3.19Åより大きい面内a格子定数を特徴とする(0001)InGaN領域と、
を含み
前記第1の結晶学的平面および前記第2の結晶学的平面のそれぞれが結晶学的に等価である、
III族窒化物半導体構造。 - 前記第1の縁および前記第2の縁が、異なる縁である、請求項1に記載の半導体構造。
- 前記第1の縁および前記第2の縁が、同一の縁である、請求項1記載の半導体構造。
- 前記第1の結晶学的平面および前記第2の結晶学的平面が、異なる結晶学的平面である、請求項1から3のいずれか一項に記載の半導体構造。
- 前記第1の結晶学的平面および前記第2の結晶学的平面が、同一の結晶学的平面である、請求項1から3のいずれか一項に記載の半導体構造。
- 前記シード領域のそれぞれが、3つから6つの平面的なシードファセットを特徴とする、請求項1から5のいずれか一項に記載の半導体構造。
- 前記シード領域のそれぞれが、三角形の基部または六角形の基部を特徴とする、請求項1から6のいずれか一項に記載の半導体構造。
- 前記結晶学的平面のそれぞれが、結晶学的に等価な{10-11}面である、請求項1から6のいずれか一項に記載の半導体構造。
- 前記結晶学的平面のそれぞれが、結晶学的に等価な{1-100}面である、請求項1から6のいずれか一項に記載の半導体構造。
- 前記結晶学的平面のそれぞれが、結晶学的に等価な{11-20}面である、請求項1から6のいずれか一項に記載の半導体構造。
- 前記結晶学的平面のそれぞれが、(1-100)面および(11-20)面である、請求項1から6のいずれか一項に記載の半導体構造。
- シード領域間の中点での領域がInGaN領域である、請求項1から11のいずれか一項に記載の半導体構造。
- 前記InGaN領域が、少なくとも部分的に緩和されたシード領域である、請求項12に記載の半導体構造。
- 前記InGaN領域が、複数のInGaN層を含み、各InGaN層が、異なる元素含有量を有する、請求項12から13のいずれか一項に記載の半導体構造。
- 前記シード領域のそれぞれが、GaNを含み、約3.189Åの格子定数を有する、請求項1から14のいずれか一項に記載の半導体構造。
- 前記面内a格子定数が3.20Åから3.50Åである、請求項1から15のいずれか一項に記載の半導体構造。
- 各シード領域が、GaNを含み、
前記InxGa1-xN/InyGa1-yNヘテロ接合および前記III族窒化物ヘテロ接合のそれぞれが、GaN-InGaNヘテロ接合である、請求項1から16のいずれか一項に記載の半導体構造。 - 複数のシード領域を含むアレイを含む、請求項1から17のいずれか一項に記載の半導体構造。
- 基板とマスク領域とをさらに含み、前記シード領域が、前記基板の第1の部分の上に重なり、前記マスク領域が、前記基板の第2の部分の上に重なる、請求項1から17のいずれか一項に記載の半導体構造。
- 前記基板が、サファイア、ケイ素、炭化ケイ素、窒化ガリウム、シリコン・オン・インシュレータ(SOI)、または窒化アルミニウムを含む、請求項19に記載の半導体構造。
- 請求項1から20のいずれか一項に記載のIII族窒化物半導体構造を含む半導体デバイス。
- 前記半導体デバイスは:
前記(0001)InGaN領域の上のn型III族窒化物層と;
前記(0001)InGaN領域の上のp型III族窒化物層と;
前記n型III窒化物層と前記p型III窒化物層との間のInGaN含有活性領域と;
前記p型III族窒化物層との電気的コンタクトを形成する第1の電気的コンタクトメタライゼーションと;
前記n型III族窒化物層との電気的コンタクトを形成する第2の電気的コンタクトメタライゼーションと、
を含む、請求項21に記載の半導体デバイス。 - 請求項21から22のいずれか一項に記載の半導体デバイスを含む照明システムまたはディスプレイシステム。
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