JP7461079B2 - 窒化インジウムガリウム構造およびデバイス - Google Patents
窒化インジウムガリウム構造およびデバイス Download PDFInfo
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- JP7461079B2 JP7461079B2 JP2022528586A JP2022528586A JP7461079B2 JP 7461079 B2 JP7461079 B2 JP 7461079B2 JP 2022528586 A JP2022528586 A JP 2022528586A JP 2022528586 A JP2022528586 A JP 2022528586A JP 7461079 B2 JP7461079 B2 JP 7461079B2
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- 229910052738 indium Inorganic materials 0.000 title description 4
- 239000004065 semiconductor Substances 0.000 claims description 188
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 185
- 229910002601 GaN Inorganic materials 0.000 claims description 184
- 239000000758 substrate Substances 0.000 claims description 87
- 238000000034 method Methods 0.000 claims description 51
- 229910052984 zinc sulfide Inorganic materials 0.000 claims description 29
- 150000004767 nitrides Chemical class 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 26
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 225
- 239000000463 material Substances 0.000 description 109
- 239000010408 film Substances 0.000 description 14
- 230000000873 masking effect Effects 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 14
- 230000008569 process Effects 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 13
- 238000005530 etching Methods 0.000 description 13
- 230000007547 defect Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 10
- 230000006911 nucleation Effects 0.000 description 10
- 238000010899 nucleation Methods 0.000 description 10
- 238000013459 approach Methods 0.000 description 8
- 230000001427 coherent effect Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000008021 deposition Effects 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000004581 coalescence Methods 0.000 description 4
- 230000002860 competitive effect Effects 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910017083 AlN Inorganic materials 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005253 cladding Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 238000001534 heteroepitaxy Methods 0.000 description 3
- 238000005329 nanolithography Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000009304 pastoral farming Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- MCSXGCZMEPXKIW-UHFFFAOYSA-N 3-hydroxy-4-[(4-methyl-2-nitrophenyl)diazenyl]-N-(3-nitrophenyl)naphthalene-2-carboxamide Chemical compound Cc1ccc(N=Nc2c(O)c(cc3ccccc23)C(=O)Nc2cccc(c2)[N+]([O-])=O)c(c1)[N+]([O-])=O MCSXGCZMEPXKIW-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- -1 InGaN Inorganic materials 0.000 description 1
- 229910005544 NiAg Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 230000036963 noncompetitive effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- Semiconductor Lasers (AREA)
Description
xmin = -6.046E-07λ2+ 1.837E-03λ - 6.917E-01, (λ ≧ 440 nm) EQN.1
xmax = -6.152E-07λ2+ 1.847E-03λ - 6.142E-01, (λ ≧ 440 nm) EQN.2
で定義される。
amin = -2.067E-07λ2 + 6.366E-04λ - 2.951, (λ ≧ 440 nm) EQN.3
amax = -2.190E-07λ2 + 6.575E-04λ - 2.970, (λ ≧ 440 nm) EQN.4
で定義される。
本発明は、以下の態様によってさらに定められる。
[1].
(a)In x Ga 1-x N(0≦x<1)とウルツ鉱型III族窒化物結晶構造とを含むシード領域と;
(b)前記ウルツ鉱型III族窒化物構造の(0001)面に平行で、前記シード領域と交差する第1の平面であって;
前記第1の平面とシード領域の第1の縁との交差が、In x Ga 1-x N/In y Ga 1-y Nヘテロ接合の位置となり、0<y≦1かつy>xであり;
前記In x Ga 1-x N/In y Ga 1-y Nヘテロ接合が、前記シード領域の第1の結晶学的平面と共平面である、第1の平面と;
(c)前記ウルツ鉱型III族窒化物結晶構造の(0001)面に平行で、前記シード領域の第2の縁に交差するいずれかの第2の平面であって、III族窒化物ヘテロ接合の位置となり、前記III族窒化物ヘテロ接合が、前記シード領域の第2の結晶学的平面と共平面である、第2の平面と;
(d)前記シード領域の上に重なる(0001)InGaN領域であって、3.19Åより大きい面内a格子定数を特徴とする(0001)InGaN領域と、
を含み
前記第1の結晶学的平面および前記第2の結晶学的平面のそれぞれが結晶学的に等価である、
III族窒化物半導体構造。
[2].
前記第1の縁および前記第2の縁が、異なる縁である、上記項目1に記載の半導体構造。
[3].
前記第1の縁および前記第2の縁が、同一の縁である、上記項目1記載の半導体構造。
[4].
前記第1の結晶学的平面および前記第2の結晶学的平面が、異なる結晶学的平面である、上記項目1から3のいずれか一項に記載の半導体構造。
[5].
前記第1の結晶学的平面および前記第2の結晶学的平面が、同一の結晶学的平面である、上記項目1から3のいずれか一項に記載の半導体構造。
[6].
前記シード領域のそれぞれが、3つから6つの平面的なシードファセットを特徴とする、上記項目1から5のいずれか一項に記載の半導体構造。
[7].
前記シード領域のそれぞれが、三角形の基部または六角形の基部を特徴とする、上記項目1から6のいずれか一項に記載の半導体構造。
[8].
前記結晶学的平面のそれぞれが、結晶学的に等価な{10-11}面である、上記項目1から6のいずれか一項に記載の半導体構造。
[9].
前記結晶学的平面のそれぞれが、結晶学的に等価な{1-100}面である、上記項目1から6のいずれか一項に記載の半導体構造。
[10].
前記結晶学的平面のそれぞれが、結晶学的に等価な{11-20}面である、上記項目1から6のいずれか一項に記載の半導体構造。
[11].
前記結晶学的平面のそれぞれが、(1-100)面および(11-20)面である、上記項目1から6のいずれか一項に記載の半導体構造。
[12].
シード領域間の中点での領域がInGaN領域である、上記項目1から11のいずれか一項に記載の半導体構造。
[13].
前記InGaN領域が、少なくとも部分的に緩和されたシード領域である、上記項目12に記載の半導体構造。
[14].
前記InGaN領域が、複数のInGaN層を含み、各InGaN層が、異なる元素含有量を有する、上記項目12から13のいずれか一項に記載の半導体構造。
[15].
前記シード領域のそれぞれが、GaNを含み、約3.189Åの格子定数を有する、上記項目1から14のいずれか一項に記載の半導体構造。
[16].
前記面内a格子定数が3.20Åから3.50Åである、上記項目1から15のいずれか一項に記載の半導体構造。
[17].
各シード領域が、GaNを含み、
前記In x Ga 1-x N/In y Ga 1-y Nヘテロ接合および前記III族窒化物ヘテロ接合のそれぞれが、GaN-InGaNヘテロ接合である、上記項目1から16のいずれか一項に記載の半導体構造。
[18].
複数のシード領域を含むアレイを含む、上記項目1から17のいずれか一項に記載の半導体構造。
[19].
基板とマスク領域とをさらに含み、前記シード領域が、前記基板の第1の部分の上に重なり、前記マスク領域が、前記基板の第2の部分の上に重なる、上記項目1から17のいずれか一項に記載の半導体構造。
[20].
前記基板が、サファイア、ケイ素、炭化ケイ素、窒化ガリウム、シリコン・オン・インシュレータ(SOI)、または窒化アルミニウムを含む、上記項目19に記載の半導体構造。
[21].
上記項目1から20のいずれか一項に記載のIII族窒化物半導体構造を含む半導体デバイス。
[22].
前記半導体デバイスは:
前記(0001)InGaN領域の上のn型III族窒化物層と;
前記(0001)InGaN領域の上のp型III族窒化物層と;
前記n型III窒化物層と前記p型III窒化物層との間のInGaN含有活性領域と;
前記p型III族窒化物層との電気的コンタクトを形成する第1の電気的コンタクトメタライゼーションと;
前記n型III族窒化物層との電気的コンタクトを形成する第2の電気的コンタクトメタライゼーションと、
を含む、上記項目21に記載の半導体デバイス。
[23].
上記項目21から22のいずれか一項に記載の半導体デバイスを含む照明システムまたはディスプレイシステム。
最後に、本明細書に開示された実施形態を実装する代替的なやり方が存在することに留意するのが望ましい。したがって、本実施形態は、例示的なものであって制限的なものではないと見なされるものとし、特許請求の範囲は、本明細書に与えられた詳細に限定されるものではないものとして、その範囲および均等物の範囲内で修正してもよい。
Claims (23)
- (a)InxGa1-xN(0≦x<1)とウルツ鉱型III族窒化物結晶構造とを含む複数のシード領域と;
(b)このシード領域の上に重なっている、In y Ga 1-y Nとウルツ鉱型III族窒化物結晶構造とを含む緩和領域(但し、0<y≦1であり、y>xである。)と;
(c)前記ウルツ鉱型III族窒化物結晶構造の(0001)面に平行で、前記シード領域と交差する第1の平面であって;
前記第1の平面とシード領域の第1のファセットとの交差が、前記緩和領域と前記シード領域との間の第1のIn x Ga 1-x N/In y Ga 1-y Nヘテロ接合に沿った第1の位置となり;
前記第1のInxGa1-xN/InyGa1-yNヘテロ接合が、前記シード領域の第1の結晶学的平面と共平面である、第1の平面と;
(d)前記ウルツ鉱型III族窒化物結晶構造の(0001)面に平行で、前記シード領域の第2のファセットに交差するいずれかの第2の平面であって、前記緩和領域と前記シード領域との間の第2のIn x Ga 1-x N/In y Ga 1-y Nヘテロ接合に沿った第2の位置となり、前記第2のIn x Ga 1-x N/In y Ga 1-y Nヘテロ接合が、第2の結晶学的平面と共平面である、第2の平面と;
(e)前記シード領域の上に重なる、合体し、緩和された(0001)InGaN領域であって、3.19Åより大きい面内a格子定数を特徴とする、合体し、緩和された(0001)InGaN領域と、
を含み
前記第1の結晶学的平面および前記第2の結晶学的平面のそれぞれが結晶学的に等価である、
III族窒化物半導体構造。 - 前記第1のファセットおよび前記第2のファセットが、異なるファセットである、請求項1に記載のIII族窒化物半導体構造。
- 前記第1のファセットおよび前記第2のファセットが、同一のファセットである、請求項1記載のIII族窒化物半導体構造。
- 前記第1の結晶学的平面および前記第2の結晶学的平面が、異なる結晶学的平面である、請求項1から3のいずれか一項に記載のIII族窒化物半導体構造。
- 前記第1の結晶学的平面および前記第2の結晶学的平面が、同一の結晶学的平面である、請求項1から3のいずれか一項に記載のIII族窒化物半導体構造。
- 前記シード領域のそれぞれが、3つから6つの平面的なシードファセットを特徴とする、請求項1から5のいずれか一項に記載のIII族窒化物半導体構造。
- 前記シード領域のそれぞれが、三角形の基部または六角形の基部を特徴とする、請求項1から6のいずれか一項に記載のIII族窒化物半導体構造。
- 前記結晶学的平面のそれぞれが、結晶学的に等価な{10-11}面である、請求項1から6のいずれか一項に記載のIII族窒化物半導体構造。
- 前記結晶学的平面のそれぞれが、結晶学的に等価な{1-100}面である、請求項1から6のいずれか一項に記載のIII族窒化物半導体構造。
- 前記結晶学的平面のそれぞれが、結晶学的に等価な{11-20}面である、請求項1から6のいずれか一項に記載のIII族窒化物半導体構造。
- 前記結晶学的平面のそれぞれが、(1-100)面および(11-20)面である、請求項1から6のいずれか一項に記載のIII族窒化物半導体構造。
- シード領域間の中点での領域がInGaN領域である、請求項1から11のいずれか一項に記載のIII族窒化物半導体構造。
- 前記InGaN領域が、少なくとも部分的に緩和されたInGaN領域である、請求項12に記載のIII族窒化物半導体構造。
- 前記InGaN領域が、複数のInGaN層を含み、各InGaN層が、異なる元素含有量を有する、請求項12から13のいずれか一項に記載のIII族窒化物半導体構造。
- 前記シード領域のそれぞれが、GaNを含み、3.189Åの面内a格子定数を有する、請求項1から14のいずれか一項に記載のIII族窒化物半導体構造。
- 前記の合体し、緩和された(0001)InGaN領域が、3.20Åから3.50Åの面内a格子定数を有する、請求項1から15のいずれか一項に記載のIII族窒化物半導体構造。
- 各シード領域が、GaNを含み、
前記InxGa1-xN/InyGa1-yNヘテロ接合および前記III族窒化物ヘテロ接合のそれぞれが、GaN-InGaNヘテロ接合である、請求項1から16のいずれか一項に記載のIII族窒化物半導体構造。 - 複数のシード領域を含むアレイを含む、請求項1から17のいずれか一項に記載のIII族窒化物半導体構造。
- 基板とマスク領域とをさらに含み、前記シード領域が、前記基板の第1の部分の上に重なり、前記マスク領域が、前記基板の第2の部分の上に重なる、請求項1から17のいずれか一項に記載のIII族窒化物半導体構造。
- 前記基板が、サファイア、ケイ素、炭化ケイ素、窒化ガリウム、シリコン・オン・インシュレータ(SOI)、または窒化アルミニウムを含む、請求項19に記載のIII族窒化物半導体構造。
- 請求項1から20のいずれか一項に記載のIII族窒化物半導体構造を含む半導体デバイス。
- 前記半導体デバイスは:
前記(0001)InGaN領域の上に重なるn型III族窒化物層と;
前記(0001)InGaN領域の上に重なるp型III族窒化物層と;
前記n型III族窒化物層と前記p型III族窒化物層との間のInGaN含有活性領域と;
前記p型III族窒化物層との電気的コンタクトを形成する第1の電気的コンタクトメタライゼーションと;
前記n型III族窒化物層との電気的コンタクトを形成する第2の電気的コンタクトメタライゼーションと、
を含む、請求項21に記載の半導体デバイス。 - 請求項21から22のいずれか一項に記載の半導体デバイスを含む照明システムまたはディスプレイシステム。
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