JP2023138318A5 - - Google Patents

Info

Publication number
JP2023138318A5
JP2023138318A5 JP2022209355A JP2022209355A JP2023138318A5 JP 2023138318 A5 JP2023138318 A5 JP 2023138318A5 JP 2022209355 A JP2022209355 A JP 2022209355A JP 2022209355 A JP2022209355 A JP 2022209355A JP 2023138318 A5 JP2023138318 A5 JP 2023138318A5
Authority
JP
Japan
Prior art keywords
voltage
low
esd protection
nmos transistor
protection circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022209355A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023138318A (ja
Filing date
Publication date
Application filed filed Critical
Priority to CN202310229884.7A priority Critical patent/CN116799001A/zh
Priority to US18/184,629 priority patent/US12433033B2/en
Publication of JP2023138318A publication Critical patent/JP2023138318A/ja
Publication of JP2023138318A5 publication Critical patent/JP2023138318A5/ja
Pending legal-status Critical Current

Links

JP2022209355A 2022-03-18 2022-12-27 Ｅｓｄ保護回路及び半導体装置 Pending JP2023138318A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN202310229884.7A CN116799001A (zh) 2022-03-18 2023-03-10 Esd保护电路及半导体装置
US18/184,629 US12433033B2 (en) 2022-03-18 2023-03-15 ESD protection circuit and semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022043270 2022-03-18
JP2022043270 2022-03-18

Publications (2)

Publication Number Publication Date
JP2023138318A JP2023138318A (ja) 2023-10-02
JP2023138318A5 true JP2023138318A5 (enExample) 2025-10-02

Family

ID=88197588

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022209355A Pending JP2023138318A (ja) 2022-03-18 2022-12-27 Ｅｓｄ保護回路及び半導体装置

Country Status (1)

Country Link
JP (1) JP2023138318A (enExample)

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