JP2023093410A5 - - Google Patents
Info
- Publication number
- JP2023093410A5 JP2023093410A5 JP2022205081A JP2022205081A JP2023093410A5 JP 2023093410 A5 JP2023093410 A5 JP 2023093410A5 JP 2022205081 A JP2022205081 A JP 2022205081A JP 2022205081 A JP2022205081 A JP 2022205081A JP 2023093410 A5 JP2023093410 A5 JP 2023093410A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gallium nitride
- iii
- integrated circuit
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US17/559,635 | 2021-12-22 | ||
| US17/559,635 US11888027B2 (en) | 2021-12-22 | 2021-12-22 | Monolithic integration of high and low-side GaN FETs with screening back gating effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023093410A JP2023093410A (ja) | 2023-07-04 |
| JP2023093410A5 true JP2023093410A5 (https=) | 2026-01-06 |
Family
ID=84547290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022205081A Pending JP2023093410A (ja) | 2021-12-22 | 2022-12-22 | スクリーニングバックゲート効果を有するハイサイド及びローサイドＧａＮ ＦＥＴのモノリシック集積化 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US11888027B2 (https=) |
| EP (1) | EP4203034A1 (https=) |
| JP (1) | JP2023093410A (https=) |
| CN (1) | CN116344580A (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6500879B2 (ja) * | 2016-08-30 | 2019-04-17 | 株式会社三洋物産 | 遊技機 |
| JP7235153B2 (ja) * | 2017-12-29 | 2023-03-08 | 株式会社三洋物産 | 遊技機 |
| JP7235154B2 (ja) * | 2018-02-15 | 2023-03-08 | 株式会社三洋物産 | 遊技機 |
| JP7231076B2 (ja) * | 2018-03-08 | 2023-03-01 | 株式会社三洋物産 | 遊技機 |
| JP2020130466A (ja) * | 2019-02-15 | 2020-08-31 | 株式会社三洋物産 | 遊技機 |
| JP7234741B2 (ja) * | 2019-03-28 | 2023-03-08 | 株式会社三洋物産 | 遊技機 |
| JP7234740B2 (ja) * | 2019-03-28 | 2023-03-08 | 株式会社三洋物産 | 遊技機 |
| JP7234760B2 (ja) * | 2019-04-11 | 2023-03-08 | 株式会社三洋物産 | 遊技機 |
| JP7234761B2 (ja) * | 2019-04-11 | 2023-03-08 | 株式会社三洋物産 | 遊技機 |
| JP2023063369A (ja) * | 2022-01-07 | 2023-05-09 | 株式会社三洋物産 | 遊技機 |
| JP2023053387A (ja) * | 2022-02-04 | 2023-04-12 | 株式会社三洋物産 | 遊技機 |
| JP2023060270A (ja) * | 2022-04-01 | 2023-04-27 | 株式会社三洋物産 | 遊技機 |
| JP2023060269A (ja) * | 2022-04-01 | 2023-04-27 | 株式会社三洋物産 | 遊技機 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5669119B1 (ja) | 2014-04-18 | 2015-02-12 | 株式会社パウデック | 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体 |
| JP2019505459A (ja) * | 2015-12-10 | 2019-02-28 | アイキューイー ピーエルシーＩＱＥ ｐｌｃ | 増加した圧縮応力によってシリコン基板上で成長させたｉｉｉ族窒化物構造物 |
| US11049960B2 (en) | 2019-03-06 | 2021-06-29 | Texas Instruments Incorporated | Gallium nitride (GaN) based transistor with multiple p-GaN blocks |
| US11211481B2 (en) | 2020-01-13 | 2021-12-28 | Cambridge Gan Devices Limited | III-V semiconductor device |
| EP3905523B1 (en) | 2020-04-30 | 2024-06-19 | Infineon Technologies Austria AG | Switching circuit, gate driver and method of operating a transistor device |
| US11362190B2 (en) * | 2020-05-22 | 2022-06-14 | Raytheon Company | Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers |
-
2021
- 2021-12-22 US US17/559,635 patent/US11888027B2/en active Active
-
2022
- 2022-12-19 CN CN202211631318.0A patent/CN116344580A/zh active Pending
- 2022-12-21 EP EP22215348.8A patent/EP4203034A1/en active Pending
- 2022-12-22 JP JP2022205081A patent/JP2023093410A/ja active Pending
-
2023
- 2023-12-18 US US18/543,738 patent/US12520547B2/en active Active
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