JP2023093410A - スクリーニングバックゲート効果を有するハイサイド及びローサイドＧａＮ ＦＥＴのモノリシック集積化 - Google Patents

スクリーニングバックゲート効果を有するハイサイド及びローサイドＧａＮ ＦＥＴのモノリシック集積化 Download PDF

Info

Publication number
JP2023093410A
JP2023093410A JP2022205081A JP2022205081A JP2023093410A JP 2023093410 A JP2023093410 A JP 2023093410A JP 2022205081 A JP2022205081 A JP 2022205081A JP 2022205081 A JP2022205081 A JP 2022205081A JP 2023093410 A JP2023093410 A JP 2023093410A
Authority
JP
Japan
Prior art keywords
gallium nitride
aluminum
nitride layer
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022205081A
Other languages
English (en)
Japanese (ja)
Other versions
JP2023093410A5 (https=
Inventor
セウプ リー ドン
Dong Seup Lee
ファリード カリド
Fareed Qhalid
セータラマン スリダール
Seetharaman Sridhar
ジョー ジュンウー
Jungwoo Joh
ソー サフ チャン
Chang Soo Suh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JP2023093410A publication Critical patent/JP2023093410A/ja
Publication of JP2023093410A5 publication Critical patent/JP2023093410A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP2022205081A 2021-12-22 2022-12-22 スクリーニングバックゲート効果を有するハイサイド及びローサイドＧａＮ ＦＥＴのモノリシック集積化 Pending JP2023093410A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/559,635 2021-12-22
US17/559,635 US11888027B2 (en) 2021-12-22 2021-12-22 Monolithic integration of high and low-side GaN FETs with screening back gating effect

Publications (2)

Publication Number Publication Date
JP2023093410A true JP2023093410A (ja) 2023-07-04
JP2023093410A5 JP2023093410A5 (https=) 2026-01-06

Family

ID=84547290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022205081A Pending JP2023093410A (ja) 2021-12-22 2022-12-22 スクリーニングバックゲート効果を有するハイサイド及びローサイドＧａＮ ＦＥＴのモノリシック集積化

Country Status (4)

Country Link
US (2) US11888027B2 (https=)
EP (1) EP4203034A1 (https=)
JP (1) JP2023093410A (https=)
CN (1) CN116344580A (https=)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023033472A (ja) * 2016-08-30 2023-03-10 株式会社三洋物産 遊技機
JP2023053388A (ja) * 2018-03-08 2023-04-12 株式会社三洋物産 遊技機
JP2023053387A (ja) * 2022-02-04 2023-04-12 株式会社三洋物産 遊技機
JP2023054225A (ja) * 2019-04-11 2023-04-13 株式会社三洋物産 遊技機
JP2023054222A (ja) * 2019-03-28 2023-04-13 株式会社三洋物産 遊技機
JP2023054224A (ja) * 2019-04-11 2023-04-13 株式会社三洋物産 遊技機
JP2023054223A (ja) * 2019-03-28 2023-04-13 株式会社三洋物産 遊技機
JP2023054227A (ja) * 2018-02-15 2023-04-13 株式会社三洋物産 遊技機
JP2023054226A (ja) * 2017-12-29 2023-04-13 株式会社三洋物産 遊技機
JP2023060270A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
JP2023060269A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
JP2023063369A (ja) * 2022-01-07 2023-05-09 株式会社三洋物産 遊技機
JP2023071934A (ja) * 2019-02-15 2023-05-23 株式会社三洋物産 遊技機

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669119B1 (ja) 2014-04-18 2015-02-12 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
JP2019505459A (ja) * 2015-12-10 2019-02-28 アイキューイー ピーエルシーＩＱＥ ｐｌｃ 増加した圧縮応力によってシリコン基板上で成長させたｉｉｉ族窒化物構造物
US11049960B2 (en) 2019-03-06 2021-06-29 Texas Instruments Incorporated Gallium nitride (GaN) based transistor with multiple p-GaN blocks
US11211481B2 (en) 2020-01-13 2021-12-28 Cambridge Gan Devices Limited III-V semiconductor device
EP3905523B1 (en) 2020-04-30 2024-06-19 Infineon Technologies Austria AG Switching circuit, gate driver and method of operating a transistor device
US11362190B2 (en) * 2020-05-22 2022-06-14 Raytheon Company Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023033472A (ja) * 2016-08-30 2023-03-10 株式会社三洋物産 遊技機
JP2023054226A (ja) * 2017-12-29 2023-04-13 株式会社三洋物産 遊技機
JP2023054227A (ja) * 2018-02-15 2023-04-13 株式会社三洋物産 遊技機
JP2023053388A (ja) * 2018-03-08 2023-04-12 株式会社三洋物産 遊技機
JP2023071934A (ja) * 2019-02-15 2023-05-23 株式会社三洋物産 遊技機
JP2023054222A (ja) * 2019-03-28 2023-04-13 株式会社三洋物産 遊技機
JP2023054223A (ja) * 2019-03-28 2023-04-13 株式会社三洋物産 遊技機
JP2023054225A (ja) * 2019-04-11 2023-04-13 株式会社三洋物産 遊技機
JP2023054224A (ja) * 2019-04-11 2023-04-13 株式会社三洋物産 遊技機
JP2023063369A (ja) * 2022-01-07 2023-05-09 株式会社三洋物産 遊技機
JP2023053387A (ja) * 2022-02-04 2023-04-12 株式会社三洋物産 遊技機
JP2023060270A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
JP2023060269A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機

Also Published As

Publication number Publication date
CN116344580A (zh) 2023-06-27
EP4203034A1 (en) 2023-06-28
US20240120383A1 (en) 2024-04-11
US20230197784A1 (en) 2023-06-22
US11888027B2 (en) 2024-01-30
US12520547B2 (en) 2026-01-06

Similar Documents

Publication Publication Date Title
US12520547B2 (en) Monolithic integration of high and low-side GaN FETS with screening back gating effect
US10600674B2 (en) Semiconductor devices with back surface isolation
JP5567513B2 (ja) シリコンおよびｉｉｉ−ｖ族のモノリシック集積デバイス
CN104319238B (zh) 形成高电子迁移率半导体器件的方法及其结构
US11302690B2 (en) Nitride semiconductor device
US12142639B2 (en) Electronic device with gallium nitride transistors and method of making same
CN114556561B (zh) 基于氮化物的半导体ic芯片及其制造方法
US12113127B2 (en) GaN-based high electron mobility transistors and fabrication method thereof
TW202125829A (zh) 半導體結構
US20230065509A1 (en) Group iii-v ic with different sheet resistance 2-deg resistors
WO2022093731A1 (en) Electronic device with enhancement mode gallium nitride transistor, and method of making same
CN114503261B (zh) 氮化物基半导体电路及其制造方法
US12615796B2 (en) Electronic device with enhancement mode gallium nitride transistor, and method of making same
CN114450804B (zh) 氮化物基半导体电路及其制造方法
TWI795022B (zh) 高電子遷移率電晶體
US20260040627A1 (en) Gallium nitride transistor with dielectric cap in gate stack
US20260082620A1 (en) Transistor structure and manufacturing method thereof
CN113078098B (zh) 半导体结构及其制造方法
CN120166734A (zh) 蓝宝石GaN HEMT功率芯片的制作方法
CN119029019A (zh) 高电子迁移率晶体管及其制造方法
CN119208325A (zh) 半导体器件及其制造方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20251222

A625 Written request for application examination (by other person)

Free format text: JAPANESE INTERMEDIATE CODE: A625

Effective date: 20251222