CN116344580A - 具有屏蔽背栅效应的高侧及低侧gan fet的单片集成 - Google Patents

具有屏蔽背栅效应的高侧及低侧gan fet的单片集成 Download PDF

Info

Publication number
CN116344580A
CN116344580A CN202211631318.0A CN202211631318A CN116344580A CN 116344580 A CN116344580 A CN 116344580A CN 202211631318 A CN202211631318 A CN 202211631318A CN 116344580 A CN116344580 A CN 116344580A
Authority
CN
China
Prior art keywords
gallium nitride
aluminum
nitride layer
gate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211631318.0A
Other languages
English (en)
Chinese (zh)
Inventor
李东燮
Q·法里德
S·赛特拉曼
J·乔
C·S·徐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of CN116344580A publication Critical patent/CN116344580A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/473—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT
    • H10D30/4732—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having confinement of carriers by multiple heterojunctions, e.g. quantum well HEMT using Group III-V semiconductor material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates

Landscapes

  • Junction Field-Effect Transistors (AREA)
CN202211631318.0A 2021-12-22 2022-12-19 具有屏蔽背栅效应的高侧及低侧gan fet的单片集成 Pending CN116344580A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/559,635 2021-12-22
US17/559,635 US11888027B2 (en) 2021-12-22 2021-12-22 Monolithic integration of high and low-side GaN FETs with screening back gating effect

Publications (1)

Publication Number Publication Date
CN116344580A true CN116344580A (zh) 2023-06-27

Family

ID=84547290

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211631318.0A Pending CN116344580A (zh) 2021-12-22 2022-12-19 具有屏蔽背栅效应的高侧及低侧gan fet的单片集成

Country Status (4)

Country Link
US (2) US11888027B2 (https=)
EP (1) EP4203034A1 (https=)
JP (1) JP2023093410A (https=)
CN (1) CN116344580A (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6500879B2 (ja) * 2016-08-30 2019-04-17 株式会社三洋物産 遊技機
JP7235153B2 (ja) * 2017-12-29 2023-03-08 株式会社三洋物産 遊技機
JP7235154B2 (ja) * 2018-02-15 2023-03-08 株式会社三洋物産 遊技機
JP7231076B2 (ja) * 2018-03-08 2023-03-01 株式会社三洋物産 遊技機
JP2020130466A (ja) * 2019-02-15 2020-08-31 株式会社三洋物産 遊技機
JP7234741B2 (ja) * 2019-03-28 2023-03-08 株式会社三洋物産 遊技機
JP7234740B2 (ja) * 2019-03-28 2023-03-08 株式会社三洋物産 遊技機
JP7234760B2 (ja) * 2019-04-11 2023-03-08 株式会社三洋物産 遊技機
JP7234761B2 (ja) * 2019-04-11 2023-03-08 株式会社三洋物産 遊技機
JP2023063369A (ja) * 2022-01-07 2023-05-09 株式会社三洋物産 遊技機
JP2023053387A (ja) * 2022-02-04 2023-04-12 株式会社三洋物産 遊技機
JP2023060270A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機
JP2023060269A (ja) * 2022-04-01 2023-04-27 株式会社三洋物産 遊技機

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5669119B1 (ja) 2014-04-18 2015-02-12 株式会社パウデック 半導体素子、電気機器、双方向電界効果トランジスタおよび実装構造体
JP2019505459A (ja) * 2015-12-10 2019-02-28 アイキューイー ピーエルシーＩＱＥ ｐｌｃ 増加した圧縮応力によってシリコン基板上で成長させたｉｉｉ族窒化物構造物
US11049960B2 (en) 2019-03-06 2021-06-29 Texas Instruments Incorporated Gallium nitride (GaN) based transistor with multiple p-GaN blocks
US11211481B2 (en) 2020-01-13 2021-12-28 Cambridge Gan Devices Limited III-V semiconductor device
EP3905523B1 (en) 2020-04-30 2024-06-19 Infineon Technologies Austria AG Switching circuit, gate driver and method of operating a transistor device
US11362190B2 (en) * 2020-05-22 2022-06-14 Raytheon Company Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers

Also Published As

Publication number Publication date
EP4203034A1 (en) 2023-06-28
JP2023093410A (ja) 2023-07-04
US20240120383A1 (en) 2024-04-11
US20230197784A1 (en) 2023-06-22
US11888027B2 (en) 2024-01-30
US12520547B2 (en) 2026-01-06

Similar Documents

Publication Publication Date Title
US12520547B2 (en) Monolithic integration of high and low-side GaN FETS with screening back gating effect
US10991722B2 (en) Ultra low parasitic inductance integrated cascode GaN devices
US10249715B2 (en) Semiconductor device and method of manufacturing the semiconductor device
CN104319238B (zh) 形成高电子迁移率半导体器件的方法及其结构
JP5567513B2 (ja) シリコンおよびｉｉｉ−ｖ族のモノリシック集積デバイス
US9887268B2 (en) Capacitively-coupled field-plate structures for semiconductor devices
US11302690B2 (en) Nitride semiconductor device
KR101045573B1 (ko) Ⅲ족 질화물 인헨스먼트 모드 소자
EP3345216B1 (en) Iii nitride complementary transistors
CN112185959B (zh) 一种与GaN HEMT电力电子器件单片集成的CMOS反相器及制备方法
US7439556B2 (en) Substrate driven field-effect transistor
US20170162429A1 (en) Semiconductor devices with back surface isolation
KR101357526B1 (ko) 반도체 장치 및 그의 제조 방법
JPWO2014050054A1 (ja) 半導体装置
CN113140566B (zh) 具有隔离结构的集成式芯片及其制作方法
US20240178285A1 (en) High electron mobility transistor and fabrication method thereof
CN114556561B (zh) 基于氮化物的半导体ic芯片及其制造方法
TW202125829A (zh) 半導體結構
KR102739884B1 (ko) 정전용량이 작은 게이트로 구성된 GaN 반도체 전력소자의 구조 및 그 제조방법
US20260082622A1 (en) Ldmos transistor
CN116344576B (zh) 半导体装置
US20220130988A1 (en) Electronic device with enhancement mode gallium nitride transistor, and method of making same
CN119208325A (zh) 半导体器件及其制造方法
CN120166734A (zh) 蓝宝石GaN HEMT功率芯片的制作方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination