JP2023039081A5 - - Google Patents
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- Publication number
- JP2023039081A5 JP2023039081A5 JP2021146056A JP2021146056A JP2023039081A5 JP 2023039081 A5 JP2023039081 A5 JP 2023039081A5 JP 2021146056 A JP2021146056 A JP 2021146056A JP 2021146056 A JP2021146056 A JP 2021146056A JP 2023039081 A5 JP2023039081 A5 JP 2023039081A5
- Authority
- JP
- Japan
- Prior art keywords
- forming
- gas
- titanium silicide
- silicide film
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021146056A JP7756520B2 (ja) | 2021-09-08 | 2021-09-08 | 成膜方法、半導体装置の製造方法、および成膜装置 |
| US17/822,472 US20230076867A1 (en) | 2021-09-08 | 2022-08-26 | Film forming method, method of manufacturing semiconductor device, and film forming apparatus |
| KR1020220107442A KR20230036972A (ko) | 2021-09-08 | 2022-08-26 | 성막 방법, 반도체 장치의 제조 방법 및 성막 장치 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021146056A JP7756520B2 (ja) | 2021-09-08 | 2021-09-08 | 成膜方法、半導体装置の製造方法、および成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023039081A JP2023039081A (ja) | 2023-03-20 |
| JP2023039081A5 true JP2023039081A5 (enExample) | 2024-03-18 |
| JP7756520B2 JP7756520B2 (ja) | 2025-10-20 |
Family
ID=85386120
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021146056A Active JP7756520B2 (ja) | 2021-09-08 | 2021-09-08 | 成膜方法、半導体装置の製造方法、および成膜装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20230076867A1 (enExample) |
| JP (1) | JP7756520B2 (enExample) |
| KR (1) | KR20230036972A (enExample) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100269328B1 (ko) * | 1997-12-31 | 2000-10-16 | 윤종용 | 원자층 증착 공정을 이용하는 도전층 형성방법 |
| KR100538806B1 (ko) | 2003-02-21 | 2005-12-26 | 주식회사 하이닉스반도체 | 에피택셜 ｃ49상의 티타늄실리사이드막을 갖는 반도체소자 및 그 제조 방법 |
| JP6147693B2 (ja) | 2014-03-31 | 2017-06-14 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、およびプログラム |
| US10468264B2 (en) | 2016-07-04 | 2019-11-05 | Samsung Electronics Co., Ltd. | Method of fabricating semiconductor device |
| KR102320047B1 (ko) | 2017-07-05 | 2021-11-01 | 삼성전자주식회사 | 집적회로 소자 및 그 제조 방법 |
-
2021
- 2021-09-08 JP JP2021146056A patent/JP7756520B2/ja active Active
-
2022
- 2022-08-26 KR KR1020220107442A patent/KR20230036972A/ko active Pending
- 2022-08-26 US US17/822,472 patent/US20230076867A1/en active Pending
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