JP2023023081A - SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 - Google Patents
SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 72
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052796 boron Inorganic materials 0.000 claims abstract description 64
- 239000012535 impurity Substances 0.000 claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims description 43
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 238000010926 purge Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 57
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 124
- 229910010271 silicon carbide Inorganic materials 0.000 description 122
- 239000007789 gas Substances 0.000 description 49
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 238000005259 measurement Methods 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000004949 mass spectrometry Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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Abstract
Description
直径が150mmのSiC基板を準備した。図3に示す成膜装置100と同様の縦型炉を用いてSiC基板1上にエピタキシャル層2を成膜した。昇温工程は3段階として、2回昇温速度を変更した。1回目の昇温速度(第1昇温速度)は、100℃/min以上であった。2回目の昇温速度(第2昇温速度)は、第1昇温速度の80%未満とした。3回目の昇温速度(第3昇温速度)は、第2昇温速度の80%未満とした。成膜温度は、1600℃以上1700℃未満とした。昇温に要する時間は、300秒以上750秒未満であった。
直径が150mmのSiC基板を準備した。比較例1は、SiC基板の側方にガス供給口を有する横型炉を用いた。そして横型炉を用いて、SiC基板1上にエピタキシャル層2を成膜した。昇温工程は1段階で、昇温速度は変更しなかった。昇温速度は、100℃/min以下とした。成膜温度は、1600℃以上1700℃未満とした。昇温に要する時間は、750秒以上であった。
Claims (7)
- SiC基板と、前記SiC基板に積層されたSiCのエピタキシャル層と、を備え、
前記エピタキシャル層は、導電型を決定する不純物と、前記不純物と導電型が異なるボロンと、を含み、
前記エピタキシャル層において、前記ボロンの濃度は面内のいずれの位置でも1.0×1014cm-3未満である、SiCエピタキシャルウェハ。 - 直径が150mm以上である、請求項1に記載のSiCエピタキシャルウェハ。
- 直径が200mm以上である、請求項1又は2に記載のSiCエピタキシャルウェハ。
- SiC基板の載置面の上方にガス供給口を有する縦型炉を用いて、SiC基板上にSiCのエピタキシャル層を成膜する成膜工程を有し、
前記成膜工程は、第1昇温速度、第2昇温速度、第3昇温速度の順に昇温速度を変更しながら成膜温度まで昇温する昇温工程を有し、
前記第1昇温速度は、前記第2昇温速度より早く、
前記第2昇温速度は、前記第3昇温速度より早く、
前記第1昇温速度は、100℃/min以上である、SiCエピタキシャルウェハの製造方法。 - 前記SiC基板の前記載置面は、成膜温度において、中心の高さ位置が外周の高さ位置より30μm以上高い、請求項4に記載のSiCエピタキシャルウェハの製造方法。
- 前記成膜工程において、前記SiC基板の裏面からパージガスを供給し、
前記パージガスは、前記SiC基板の外周より20mm以上内側から供給される、請求項4又は5に記載のSiCエピタキシャルウェハの製造方法。 - 前記昇温工程に要する時間は、300秒以上750秒以下である、請求項4~6のいずれか一項に記載のSiCエピタキシャルウェハの製造方法。
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JP2021128273A JP7285890B2 (ja) | 2021-08-04 | 2021-08-04 | SiCエピタキシャルウェハ及びSiCエピタキシャルウェハの製造方法 |
CN202210915297.9A CN115704109A (zh) | 2021-08-04 | 2022-08-01 | SiC外延晶片及SiC外延晶片的制造方法 |
US17/879,474 US11795577B2 (en) | 2021-08-04 | 2022-08-02 | SiC epitaxial wafer and method of manufacturing SiC epitaxial wafer |
JP2023005972A JP2023042593A (ja) | 2021-08-04 | 2023-01-18 | SiCエピタキシャルウェハ |
US18/371,423 US20240011191A1 (en) | 2021-08-04 | 2023-09-21 | SiC EPITAXIAL WAFER AND METHOD OF MANUFACTURING SiC EPITAXIAL WAFER |
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JP2005109408A (ja) * | 2003-10-02 | 2005-04-21 | Toyo Tanso Kk | 縦型ホットウォールCVDエピタキシャル装置、SiCエピタキシャル成長方法及びSiCエピタキシャル成長膜 |
JP2012195355A (ja) * | 2011-03-15 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板の製造方法 |
JP2013021113A (ja) * | 2011-07-11 | 2013-01-31 | Nuflare Technology Inc | 気相成長装置および気相成長方法 |
JP2015529015A (ja) * | 2013-03-15 | 2015-10-01 | ダウ コーニング コーポレーションDow Corning Corporation | SiCエピタキシャル膜を有するSiC基板 |
JP2016171348A (ja) * | 2014-11-12 | 2016-09-23 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法および炭化珪素エピタキシャル基板 |
JP2019121690A (ja) * | 2018-01-05 | 2019-07-22 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体基板および炭化珪素半導体基板の製造方法 |
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JP6419414B2 (ja) * | 2013-03-22 | 2018-11-07 | 株式会社東芝 | SiCエピタキシャルウェハおよび半導体装置 |
EP3614419B1 (en) | 2017-04-18 | 2024-05-01 | Tokyo Electron Limited | Film-forming device and method for cleaning same |
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JP2005109408A (ja) * | 2003-10-02 | 2005-04-21 | Toyo Tanso Kk | 縦型ホットウォールCVDエピタキシャル装置、SiCエピタキシャル成長方法及びSiCエピタキシャル成長膜 |
JP2012195355A (ja) * | 2011-03-15 | 2012-10-11 | Hitachi Kokusai Electric Inc | 基板処理装置及び基板の製造方法 |
JP2013021113A (ja) * | 2011-07-11 | 2013-01-31 | Nuflare Technology Inc | 気相成長装置および気相成長方法 |
JP2015529015A (ja) * | 2013-03-15 | 2015-10-01 | ダウ コーニング コーポレーションDow Corning Corporation | SiCエピタキシャル膜を有するSiC基板 |
JP2016171348A (ja) * | 2014-11-12 | 2016-09-23 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板の製造方法および炭化珪素エピタキシャル基板 |
JP2019121690A (ja) * | 2018-01-05 | 2019-07-22 | 国立研究開発法人産業技術総合研究所 | 炭化珪素半導体基板および炭化珪素半導体基板の製造方法 |
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