JP2023010171A5 - - Google Patents

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Publication number
JP2023010171A5
JP2023010171A5 JP2021114115A JP2021114115A JP2023010171A5 JP 2023010171 A5 JP2023010171 A5 JP 2023010171A5 JP 2021114115 A JP2021114115 A JP 2021114115A JP 2021114115 A JP2021114115 A JP 2021114115A JP 2023010171 A5 JP2023010171 A5 JP 2023010171A5
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JP
Japan
Prior art keywords
layer
side guide
guide layer
nitride
based semiconductor
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JP2021114115A
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English (en)
Japanese (ja)
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JP2023010171A (ja
JP7737250B2 (ja
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Priority claimed from JP2021114115A external-priority patent/JP7737250B2/ja
Priority to JP2021114115A priority Critical patent/JP7737250B2/ja
Priority to PCT/JP2022/018699 priority patent/WO2023281902A1/ja
Priority to EP22837323.9A priority patent/EP4369538A4/en
Priority to CN202280047450.9A priority patent/CN117597841A/zh
Priority to US18/063,487 priority patent/US20230140710A1/en
Publication of JP2023010171A publication Critical patent/JP2023010171A/ja
Publication of JP2023010171A5 publication Critical patent/JP2023010171A5/ja
Publication of JP7737250B2 publication Critical patent/JP7737250B2/ja
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JP2021114115A 2021-07-09 2021-07-09 窒化物系半導体発光素子 Active JP7737250B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2021114115A JP7737250B2 (ja) 2021-07-09 2021-07-09 窒化物系半導体発光素子
PCT/JP2022/018699 WO2023281902A1 (ja) 2021-07-09 2022-04-25 窒化物系半導体発光素子
EP22837323.9A EP4369538A4 (en) 2021-07-09 2022-04-25 Nitride semiconductor light emitting element
CN202280047450.9A CN117597841A (zh) 2021-07-09 2022-04-25 氮化物系半导体发光元件
US18/063,487 US20230140710A1 (en) 2021-07-09 2022-12-08 Nitride-based semiconductor light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021114115A JP7737250B2 (ja) 2021-07-09 2021-07-09 窒化物系半導体発光素子

Publications (3)

Publication Number Publication Date
JP2023010171A JP2023010171A (ja) 2023-01-20
JP2023010171A5 true JP2023010171A5 (enExample) 2024-07-18
JP7737250B2 JP7737250B2 (ja) 2025-09-10

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ID=84801499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021114115A Active JP7737250B2 (ja) 2021-07-09 2021-07-09 窒化物系半導体発光素子

Country Status (5)

Country Link
US (1) US20230140710A1 (enExample)
EP (1) EP4369538A4 (enExample)
JP (1) JP7737250B2 (enExample)
CN (1) CN117597841A (enExample)
WO (1) WO2023281902A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033469A1 (ja) * 2023-08-10 2025-02-13 ヌヴォトンテクノロジージャパン株式会社 窒化物系半導体発光素子
US20250169231A1 (en) 2023-11-21 2025-05-22 Nichia Corporation Light-emitting element

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009141340A (ja) 2007-11-12 2009-06-25 Rohm Co Ltd 窒化物半導体レーザ素子
WO2010141945A1 (en) 2009-06-05 2010-12-09 The Regents Of The University Of California Asymmetrically cladded laser diode
JP5255106B2 (ja) 2011-10-24 2013-08-07 住友電気工業株式会社 窒化物半導体発光素子
JP2014183120A (ja) 2013-03-18 2014-09-29 Renesas Electronics Corp 半導体装置およびその製造方法並びに半導体ウェハ
JP6255763B2 (ja) 2013-07-19 2018-01-10 三菱電機株式会社 半導体レーザ装置
JP6327323B2 (ja) 2015-11-30 2018-05-23 日亜化学工業株式会社 半導体レーザ素子及びその製造方法
CN109075530B (zh) * 2016-05-13 2021-01-12 松下半导体解决方案株式会社 氮化物类发光元件
JP6754918B2 (ja) 2018-03-30 2020-09-16 パナソニックセミコンダクターソリューションズ株式会社 半導体発光素子
WO2020039904A1 (ja) 2018-08-24 2020-02-27 ソニーセミコンダクタソリューションズ株式会社 発光素子
JP7584884B2 (ja) * 2018-12-03 2024-11-18 古河電気工業株式会社 半導体レーザチップ実装サブマウントおよびその製造方法ならびに半導体レーザモジュール

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