JP2022536098A - デュアルポアセンサの製造方法 - Google Patents
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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Abstract
Description
Claims (15)
- デュアルポアセンサを形成する方法であって、
基板の表面内に、仕切壁によって分離された2つの流体リザーバを含むパターンを設けること、
犠牲材料の層を前記2つの流体リザーバの中に堆積させること、
膜層を堆積させること、
前記膜層を貫通して2つのナノポアをパターニングすること、
前記犠牲材料を前記2つの流体リザーバから除去すること、並びに
1以上の流体ポート及び共通チャンバをパターニングすることを含む、方法。 - 前記パターンは、前記流体リザーバの壁によって画定されたそれぞれの境界内に配置された複数の支持構造を更に含む、請求項1に記載の方法。
- 前記複数の支持構造のうちの個々のものが、台形状の断面を有する、請求項2に記載の方法。
- 前記基板は、単結晶シリコンを含む、請求項1に記載の方法。
- 前記基板のパターニングされた前記表面が、熱酸化されたシリコンの層を含む、請求項4に記載の方法。
- 前記基板のパターニングされた前記表面が、堆積された誘電材料の層を含む、請求項4に記載の方法。
- 前記仕切壁の両側の表面が、各々、前記基板のフィールド表面の平面と54.74度+/-5度の範囲内の角度を形成するように傾斜している、請求項4に記載の方法。
- 前記2つのナノポアは、前記流体リザーバの各々の上に配置された前記膜層のそれぞれの部分を貫通して形成される、請求項1に記載の方法。
- 前記基板は、第1のシリコン層、第2のシリコン層、及び前記第1のシリコン層と前記第2のシリコン層との間に介在する電気絶縁層を含み、
前記パターンは、前記第2のシリコン層内に設けられ、
前記方法は、パターニングされた前記第2のシリコン層の少なくとも一部分を熱酸化することを更に含む、請求項1に記載の方法。 - 前記犠牲材料を前記2つの流体リザーバから除去することは、前記膜層を貫通して複数の通気開口をパターニングし、前記複数の通気開口を通して前記犠牲材料を除去することを含む、請求項1に記載の方法。
- デュアルポアセンサを形成する方法であって、
基板の単結晶シリコン表面内にパターンを設けることであって、前記パターンは、
仕切壁によって分離された2つの流体リザーバ、及び
前記2つの流体リザーバの1以上の壁によって画定されたそれぞれの境界内に配置された複数の支持構造を含む、パターンを設けること、
前記2つの流体リザーバを犠牲材料で充填すること、
膜層を堆積させること、
前記膜層を貫通して2つのナノポアをパターニングすること、
前記犠牲材料を前記2つの流体リザーバから除去すること、並びに
1以上の流体ポート及び共通チャンバを画定するために、オーバーコート層をパターニングすることを含む、方法。 - 前記基板は、第1のシリコン層、第2のシリコン層、及び前記第1のシリコン層と前記第2のシリコン層との間に介在する電気絶縁層を含み、
前記パターンは、前記第1のシリコン層内に設けられ、
前記方法は、パターニングされた前記第1のシリコン層の少なくとも一部分を熱酸化することを更に含む、請求項11に記載の方法。 - パターニングされた前記単結晶シリコン表面を熱酸化することを更に含む、請求項11に記載の方法。
- 前記2つの流体リザーバを犠牲材料で充填する前に、誘電材料の層を堆積させることを更に含む、請求項11に記載の方法。
- デュアルポアセンサを形成する方法であって、
パターニングされた基板を設けることを含み、パターンは、
仕切壁によって分離された2つの流体リザーバを含み、前記仕切壁の両側の表面が、各々、前記基板のフィールド表面の平面と54.74度+/-5度の範囲内の角度を形成するように傾斜し、前記パターンは更に、
前記2つの流体リザーバの1以上の壁によって画定されたそれぞれの境界内に配置された複数の支持構造を含み、前記複数の支持構造のうちの個々のものが、台形状の断面を有し、
前記方法は更に、
前記2つの流体リザーバを犠牲材料で充填すること、
窒化ケイ素の膜層を堆積させること、
前記窒化ケイ素の膜層を貫通して2つのナノポアをパターニングすること、
前記犠牲材料を前記2つの流体リザーバから除去すること、並びに
1以上の流体ポート及び共通チャンバを画定するために、オーバーコート層をパターニングすることを含む、方法。
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US201962858722P | 2019-06-07 | 2019-06-07 | |
US62/858,722 | 2019-06-07 | ||
PCT/US2020/028268 WO2020247070A1 (en) | 2019-06-07 | 2020-04-15 | Manufacturing methods for dual pore sensors |
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CA2988288C (en) * | 2015-06-30 | 2023-01-03 | F. Hoffmann-La Roche Ag | Design and methods for measuring analytes using nanofabricated device |
US11499959B2 (en) * | 2016-12-09 | 2022-11-15 | Hitachi High-Tech Corporation | Nanopore-forming method, nanopore-forming device and biomolecule measurement device |
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- 2020-04-15 EP EP20817677.6A patent/EP3980557A4/en not_active Withdrawn
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- 2020-04-15 US US17/617,151 patent/US20220242725A1/en active Pending
- 2020-04-15 KR KR1020227000391A patent/KR20220004793A/ko unknown
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CN114222823A (zh) | 2022-03-22 |
EP3980557A4 (en) | 2023-07-26 |
US20220242725A1 (en) | 2022-08-04 |
WO2020247070A1 (en) | 2020-12-10 |
JP7250962B2 (ja) | 2023-04-03 |
EP3980557A1 (en) | 2022-04-13 |
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