JPS6435352A - Silicon microsensor and its production - Google Patents

Silicon microsensor and its production

Info

Publication number
JPS6435352A
JPS6435352A JP19314887A JP19314887A JPS6435352A JP S6435352 A JPS6435352 A JP S6435352A JP 19314887 A JP19314887 A JP 19314887A JP 19314887 A JP19314887 A JP 19314887A JP S6435352 A JPS6435352 A JP S6435352A
Authority
JP
Japan
Prior art keywords
film
microbridge
wafer
thermally oxidized
etched
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19314887A
Other languages
Japanese (ja)
Other versions
JPH07107496B2 (en
Inventor
Hisatoshi Furubayashi
Yasuhiko Inami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP19314887A priority Critical patent/JPH07107496B2/en
Publication of JPS6435352A publication Critical patent/JPS6435352A/en
Publication of JPH07107496B2 publication Critical patent/JPH07107496B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Micromachines (AREA)
  • Pressure Sensors (AREA)
  • Weting (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

PURPOSE:To form a support such as microbridge which does not crack and rupture even if only the silicon oxide is used by using the silicon oxide film produced by a sputtering method to form the support. CONSTITUTION:The surface of a silicon wafer 1 is thermally oxidized to form a thermally oxidized film 2 and thereafter, an SiO2 film 3 is formed thicker than the film 2 by the sputtering method. The sputtering is executed under the conditions of using a gaseous mixture prepd. by incorporating 1-5% oxygen into argon and maintaining the total gaseous pressure under 6Pa and the wafer temp. at 100 deg.C. The sputtered film 3 and the thermally oxidized film 2 are etched and patterned by using a photoresist and hydrofluoric acid buffer soln., following which the silicon wafer 1 is etched by an EPW soln. heated near to the b.p., by which the wafer 1 is formed with a cavity. The microbridge is thus produced. A thin film 4 consisting of an IR sensor material, gas sensitive material, moisture sensitive material, pressure sensor, etc., and electrodes 5 are formed in the final on the resultant microbridge part.
JP19314887A 1987-07-31 1987-07-31 Silicon microsensor and manufacturing method thereof Expired - Lifetime JPH07107496B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19314887A JPH07107496B2 (en) 1987-07-31 1987-07-31 Silicon microsensor and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19314887A JPH07107496B2 (en) 1987-07-31 1987-07-31 Silicon microsensor and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS6435352A true JPS6435352A (en) 1989-02-06
JPH07107496B2 JPH07107496B2 (en) 1995-11-15

Family

ID=16303083

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19314887A Expired - Lifetime JPH07107496B2 (en) 1987-07-31 1987-07-31 Silicon microsensor and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH07107496B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552910A (en) * 1993-11-29 1996-09-03 Sharp Kabushiki Kaisha Liquid crystal display having zinc sulfide switching elements and method for producing the same
US5734452A (en) * 1994-09-26 1998-03-31 Sharp Kabushiki Kaisha Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer
US8501101B2 (en) 2010-12-03 2013-08-06 Industrial Technology Research Institute Gas sensor
CN111847377A (en) * 2020-08-03 2020-10-30 中国计量大学 Preparation method of silicon-based MEMS micro-hemispherical array
JP2022536098A (en) * 2019-06-07 2022-08-12 アプライド マテリアルズ インコーポレイテッド Manufacturing method of dual pore sensor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552910A (en) * 1993-11-29 1996-09-03 Sharp Kabushiki Kaisha Liquid crystal display having zinc sulfide switching elements and method for producing the same
US5734452A (en) * 1994-09-26 1998-03-31 Sharp Kabushiki Kaisha Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer
US8501101B2 (en) 2010-12-03 2013-08-06 Industrial Technology Research Institute Gas sensor
JP2022536098A (en) * 2019-06-07 2022-08-12 アプライド マテリアルズ インコーポレイテッド Manufacturing method of dual pore sensor
CN111847377A (en) * 2020-08-03 2020-10-30 中国计量大学 Preparation method of silicon-based MEMS micro-hemispherical array

Also Published As

Publication number Publication date
JPH07107496B2 (en) 1995-11-15

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