JPS6435352A - Silicon microsensor and its production - Google Patents
Silicon microsensor and its productionInfo
- Publication number
- JPS6435352A JPS6435352A JP19314887A JP19314887A JPS6435352A JP S6435352 A JPS6435352 A JP S6435352A JP 19314887 A JP19314887 A JP 19314887A JP 19314887 A JP19314887 A JP 19314887A JP S6435352 A JPS6435352 A JP S6435352A
- Authority
- JP
- Japan
- Prior art keywords
- film
- microbridge
- wafer
- thermally oxidized
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Micromachines (AREA)
- Pressure Sensors (AREA)
- Weting (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
PURPOSE:To form a support such as microbridge which does not crack and rupture even if only the silicon oxide is used by using the silicon oxide film produced by a sputtering method to form the support. CONSTITUTION:The surface of a silicon wafer 1 is thermally oxidized to form a thermally oxidized film 2 and thereafter, an SiO2 film 3 is formed thicker than the film 2 by the sputtering method. The sputtering is executed under the conditions of using a gaseous mixture prepd. by incorporating 1-5% oxygen into argon and maintaining the total gaseous pressure under 6Pa and the wafer temp. at 100 deg.C. The sputtered film 3 and the thermally oxidized film 2 are etched and patterned by using a photoresist and hydrofluoric acid buffer soln., following which the silicon wafer 1 is etched by an EPW soln. heated near to the b.p., by which the wafer 1 is formed with a cavity. The microbridge is thus produced. A thin film 4 consisting of an IR sensor material, gas sensitive material, moisture sensitive material, pressure sensor, etc., and electrodes 5 are formed in the final on the resultant microbridge part.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19314887A JPH07107496B2 (en) | 1987-07-31 | 1987-07-31 | Silicon microsensor and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19314887A JPH07107496B2 (en) | 1987-07-31 | 1987-07-31 | Silicon microsensor and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6435352A true JPS6435352A (en) | 1989-02-06 |
JPH07107496B2 JPH07107496B2 (en) | 1995-11-15 |
Family
ID=16303083
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19314887A Expired - Lifetime JPH07107496B2 (en) | 1987-07-31 | 1987-07-31 | Silicon microsensor and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07107496B2 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552910A (en) * | 1993-11-29 | 1996-09-03 | Sharp Kabushiki Kaisha | Liquid crystal display having zinc sulfide switching elements and method for producing the same |
US5734452A (en) * | 1994-09-26 | 1998-03-31 | Sharp Kabushiki Kaisha | Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer |
US8501101B2 (en) | 2010-12-03 | 2013-08-06 | Industrial Technology Research Institute | Gas sensor |
CN111847377A (en) * | 2020-08-03 | 2020-10-30 | 中国计量大学 | Preparation method of silicon-based MEMS micro-hemispherical array |
JP2022536098A (en) * | 2019-06-07 | 2022-08-12 | アプライド マテリアルズ インコーポレイテッド | Manufacturing method of dual pore sensor |
-
1987
- 1987-07-31 JP JP19314887A patent/JPH07107496B2/en not_active Expired - Lifetime
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552910A (en) * | 1993-11-29 | 1996-09-03 | Sharp Kabushiki Kaisha | Liquid crystal display having zinc sulfide switching elements and method for producing the same |
US5734452A (en) * | 1994-09-26 | 1998-03-31 | Sharp Kabushiki Kaisha | Two-terminal non-linear resistive device and a method for producing the same in which nickel or iron is an impurity in the zinc sulfide layer |
US8501101B2 (en) | 2010-12-03 | 2013-08-06 | Industrial Technology Research Institute | Gas sensor |
JP2022536098A (en) * | 2019-06-07 | 2022-08-12 | アプライド マテリアルズ インコーポレイテッド | Manufacturing method of dual pore sensor |
CN111847377A (en) * | 2020-08-03 | 2020-10-30 | 中国计量大学 | Preparation method of silicon-based MEMS micro-hemispherical array |
Also Published As
Publication number | Publication date |
---|---|
JPH07107496B2 (en) | 1995-11-15 |
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