JP2022535399A5 - - Google Patents

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Publication number
JP2022535399A5
JP2022535399A5 JP2021571760A JP2021571760A JP2022535399A5 JP 2022535399 A5 JP2022535399 A5 JP 2022535399A5 JP 2021571760 A JP2021571760 A JP 2021571760A JP 2021571760 A JP2021571760 A JP 2021571760A JP 2022535399 A5 JP2022535399 A5 JP 2022535399A5
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JP
Japan
Prior art keywords
light
angles
detectors
sample
light source
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JP2021571760A
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English (en)
Japanese (ja)
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JP2022535399A (ja
JP7410982B2 (ja
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Priority claimed from US16/885,211 external-priority patent/US11499924B2/en
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Publication of JP2022535399A publication Critical patent/JP2022535399A/ja
Publication of JP2022535399A5 publication Critical patent/JP2022535399A5/ja
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Publication of JP7410982B2 publication Critical patent/JP7410982B2/ja
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JP2021571760A 2019-06-03 2020-06-02 光学システム内の光の1つ又は複数の特性の決定 Active JP7410982B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962856398P 2019-06-03 2019-06-03
US62/856,398 2019-06-03
US16/885,211 US11499924B2 (en) 2019-06-03 2020-05-27 Determining one or more characteristics of light in an optical system
US16/885,211 2020-05-27
PCT/US2020/035629 WO2020247324A1 (en) 2019-06-03 2020-06-02 Determining one or more characteristics of light in an optical system

Publications (3)

Publication Number Publication Date
JP2022535399A JP2022535399A (ja) 2022-08-08
JP2022535399A5 true JP2022535399A5 (enExample) 2023-06-05
JP7410982B2 JP7410982B2 (ja) 2024-01-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021571760A Active JP7410982B2 (ja) 2019-06-03 2020-06-02 光学システム内の光の1つ又は複数の特性の決定

Country Status (6)

Country Link
US (1) US11499924B2 (enExample)
EP (1) EP3973277A4 (enExample)
JP (1) JP7410982B2 (enExample)
KR (1) KR102695206B1 (enExample)
TW (1) TWI828915B (enExample)
WO (1) WO2020247324A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020200158A1 (de) * 2020-01-09 2021-07-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die EUV-Projektionslithografie
US11293880B2 (en) * 2020-02-20 2022-04-05 Kla Corporation Method and apparatus for beam stabilization and reference correction for EUV inspection
JP2025080300A (ja) * 2023-11-14 2025-05-26 レーザーテック株式会社 光学装置及び光学装置の制御方法

Family Cites Families (25)

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JPS5783758A (en) 1980-09-04 1982-05-25 Mitsubishi Heavy Ind Ltd Gasket tightening method
DE10119072C1 (de) 2001-04-12 2002-12-05 Aixuv Gmbh Reflektometeranordnung und Verfahren zur Bestimmung des Reflexionsvermögens ausgewählter Messorte von spektral abhängig reflektierenden Messobjekten
US6963395B2 (en) 2001-07-09 2005-11-08 The Regents Of The University Of California Method and apparatus for inspecting an EUV mask blank
JP2004061177A (ja) * 2002-07-25 2004-02-26 Canon Inc 光学装置及び測定方法、半導体デバイスの製造方法
JP2005294087A (ja) 2004-04-01 2005-10-20 Nikon Corp 光源ユニット、照明光学装置、露光装置および露光方法
NL2003658A (en) 2008-12-31 2010-07-01 Asml Holding Nv Euv mask inspection.
US8050380B2 (en) 2009-05-05 2011-11-01 Media Lario, S.R.L. Zone-optimized mirrors and optical systems using same
DE102010062763A1 (de) 2010-12-09 2012-06-14 Carl Zeiss Smt Gmbh Verfahren zum Vermessen eines optischen Systems
EP2663897A4 (en) 2011-01-11 2018-01-03 KLA-Tencor Corporation Apparatus for euv imaging and methods of using same
JP5008012B2 (ja) * 2011-01-28 2012-08-22 レーザーテック株式会社 検査装置、及び検査方法
JP5758727B2 (ja) 2011-07-15 2015-08-05 ルネサスエレクトロニクス株式会社 マスク検査方法、およびマスク検査装置
DE102013204442A1 (de) 2013-03-14 2014-10-02 Carl Zeiss Smt Gmbh Optischer Wellenleiter zur Führung von Beleuchtungslicht
US9518935B2 (en) 2013-07-29 2016-12-13 Kla-Tencor Corporation Monitoring changes in photomask defectivity
US20150192459A1 (en) 2014-01-08 2015-07-09 Kla-Tencor Corporation Extreme ultra-violet (euv) inspection systems
US9625824B2 (en) 2015-04-30 2017-04-18 Taiwan Semiconductor Manufacturing Company, Ltd Extreme ultraviolet lithography collector contamination reduction
US11002688B2 (en) 2016-02-02 2021-05-11 Steven M. Ebstein System for actinic inspection of semiconductor masks
JP6004126B1 (ja) 2016-03-02 2016-10-05 レーザーテック株式会社 検査装置、及びそのフォーカス調整方法
EP3559747B1 (de) * 2016-12-20 2026-03-18 EV Group E. Thallner GmbH Vorrichtung und verfahren zur belichtung einer lichtempfindlichen schicht
NL2018855B1 (en) * 2017-05-05 2018-11-14 Illumina Inc Laser line illuminator for high throughput sequencing
JP6249513B1 (ja) 2017-03-27 2017-12-20 レーザーテック株式会社 補正方法、補正装置及び検査装置
JP6866471B2 (ja) * 2017-03-27 2021-04-28 ギガフォトン株式会社 Euv光生成装置
NL2020858A (en) 2017-05-24 2018-12-04 Asml Holding Nv Alignment mark for two-dimensional alignment in an alignment system
EP3422102A1 (en) 2017-06-26 2019-01-02 ASML Netherlands B.V. Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
US10451979B2 (en) 2017-09-29 2019-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for EUV lithography and method of measuring focus
US10624196B1 (en) 2018-09-27 2020-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Laser source device and extreme ultraviolet lithography device

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