JP2022533388A5 - - Google Patents

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Publication number
JP2022533388A5
JP2022533388A5 JP2021568761A JP2021568761A JP2022533388A5 JP 2022533388 A5 JP2022533388 A5 JP 2022533388A5 JP 2021568761 A JP2021568761 A JP 2021568761A JP 2021568761 A JP2021568761 A JP 2021568761A JP 2022533388 A5 JP2022533388 A5 JP 2022533388A5
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JP
Japan
Prior art keywords
gas precursor
substrate
pulsed
etching chamber
gas
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JP2021568761A
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English (en)
Japanese (ja)
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JP2022533388A (ja
JP7539927B2 (ja
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Priority claimed from PCT/US2020/024472 external-priority patent/WO2020236303A1/en
Publication of JP2022533388A publication Critical patent/JP2022533388A/ja
Publication of JP2022533388A5 publication Critical patent/JP2022533388A5/ja
Application granted granted Critical
Publication of JP7539927B2 publication Critical patent/JP7539927B2/ja
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JP2021568761A 2019-05-23 2020-03-24 ｉｎ－ｓｉｔｕ原子層堆積プロセス Active JP7539927B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201962852023P 2019-05-23 2019-05-23
US62/852,023 2019-05-23
PCT/US2020/024472 WO2020236303A1 (en) 2019-05-23 2020-03-24 In-situ atomic layer deposition process

Publications (3)

Publication Number Publication Date
JP2022533388A JP2022533388A (ja) 2022-07-22
JP2022533388A5 true JP2022533388A5 (enExample) 2023-04-05
JP7539927B2 JP7539927B2 (ja) 2024-08-26

Family

ID=73456146

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021568761A Active JP7539927B2 (ja) 2019-05-23 2020-03-24 ｉｎ－ｓｉｔｕ原子層堆積プロセス

Country Status (6)

Country Link
US (1) US20200373149A1 (enExample)
JP (1) JP7539927B2 (enExample)
KR (1) KR102830858B1 (enExample)
CN (1) CN113906539A (enExample)
TW (1) TWI901587B (enExample)
WO (1) WO2020236303A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11521849B2 (en) * 2018-07-20 2022-12-06 Applied Materials, Inc. In-situ deposition process
US11508572B2 (en) * 2020-04-01 2022-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
CN114121641A (zh) * 2020-08-28 2022-03-01 东京毅力科创株式会社 晶片处理方法和等离子体处理装置
US11970769B2 (en) * 2021-06-24 2024-04-30 Asm Ip Holding B.V. Cyclical deposition methods
US20240026527A1 (en) * 2022-07-22 2024-01-25 Applied Materials, Inc. Method of depositing silicon based dielectric film

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7399388B2 (en) * 2003-07-25 2008-07-15 Applied Materials, Inc. Sequential gas flow oxide deposition technique
US7629270B2 (en) * 2004-08-27 2009-12-08 Asm America, Inc. Remote plasma activated nitridation
US7651961B2 (en) * 2007-03-30 2010-01-26 Tokyo Electron Limited Method for forming strained silicon nitride films and a device containing such films
JP2011023718A (ja) * 2009-07-15 2011-02-03 Asm Japan Kk ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
US20110256734A1 (en) * 2010-04-15 2011-10-20 Hausmann Dennis M Silicon nitride films and methods
US20140273530A1 (en) * 2013-03-15 2014-09-18 Victor Nguyen Post-Deposition Treatment Methods For Silicon Nitride
WO2015126590A1 (en) * 2014-02-18 2015-08-27 Applied Materials, Inc. Hermetic cvd-cap with improved step coverage in high aspect ratio structures
KR20170019668A (ko) * 2015-08-12 2017-02-22 (주)디엔에프 플라즈마 원자층 증착법을 이용한 실리콘 질화 박막의 제조방법
WO2017033979A1 (ja) * 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US9627221B1 (en) * 2015-12-28 2017-04-18 Asm Ip Holding B.V. Continuous process incorporating atomic layer etching
US10062563B2 (en) * 2016-07-01 2018-08-28 Lam Research Corporation Selective atomic layer deposition with post-dose treatment
US10703915B2 (en) * 2016-09-19 2020-07-07 Versum Materials Us, Llc Compositions and methods for the deposition of silicon oxide films
US10832908B2 (en) * 2016-11-11 2020-11-10 Lam Research Corporation Self-aligned multi-patterning process flow with ALD gapfill spacer mask
US10134579B2 (en) * 2016-11-14 2018-11-20 Lam Research Corporation Method for high modulus ALD SiO2 spacer
JP6804277B2 (ja) * 2016-11-30 2020-12-23 東京エレクトロン株式会社 処理方法および処理装置
US10600648B2 (en) * 2017-04-20 2020-03-24 Lam Research Corporation Silicon-based deposition for semiconductor processing
US20180371612A1 (en) * 2017-06-27 2018-12-27 Wonik Materials Co., Ltd. Low Temperature Process for Forming Silicon-Containing Thin Layer
US10269559B2 (en) * 2017-09-13 2019-04-23 Lam Research Corporation Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
US10658174B2 (en) * 2017-11-21 2020-05-19 Lam Research Corporation Atomic layer deposition and etch for reducing roughness
KR20250029272A (ko) * 2018-09-28 2025-03-04 램 리써치 코포레이션 증착 부산물 빌드업 (buildup) 으로부터 진공 펌프 보호

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