JP2022530842A5 - - Google Patents

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Publication number
JP2022530842A5
JP2022530842A5 JP2021574301A JP2021574301A JP2022530842A5 JP 2022530842 A5 JP2022530842 A5 JP 2022530842A5 JP 2021574301 A JP2021574301 A JP 2021574301A JP 2021574301 A JP2021574301 A JP 2021574301A JP 2022530842 A5 JP2022530842 A5 JP 2022530842A5
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Japan
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layer
semiconductor device
depth
measuring
device wafer
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JP2021574301A
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English (en)
Japanese (ja)
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JP7595599B2 (ja
JP2022530842A (ja
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Priority claimed from PCT/US2020/018200 external-priority patent/WO2020168140A1/en
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Publication of JP2022530842A5 publication Critical patent/JP2022530842A5/ja
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JP2021574301A 2019-02-14 2020-02-14 トポグラフィ半導体デバイスウェハの製造における位置ずれの測定方法 Active JP7595599B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201962805737P 2019-02-14 2019-02-14
US62/805,737 2019-02-14
US201962864323P 2019-06-20 2019-06-20
US62/864,323 2019-06-20
US201962870264P 2019-07-03 2019-07-03
US62/870,264 2019-07-03
PCT/US2020/018200 WO2020168140A1 (en) 2019-02-14 2020-02-14 Method of measuring misregistration in the manufacture of topographic semiconductor device wafers

Publications (3)

Publication Number Publication Date
JP2022530842A JP2022530842A (ja) 2022-07-01
JP2022530842A5 true JP2022530842A5 (https=) 2023-02-21
JP7595599B2 JP7595599B2 (ja) 2024-12-06

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JP2021573602A Active JP7254217B2 (ja) 2019-02-14 2020-02-14 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法
JP2021574301A Active JP7595599B2 (ja) 2019-02-14 2020-02-14 トポグラフィ半導体デバイスウェハの製造における位置ずれの測定方法

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JP2021573602A Active JP7254217B2 (ja) 2019-02-14 2020-02-14 誘導されたトポグラフィを利用した半導体デバイスウェハの位置ずれを測定するためのシステムと方法

Country Status (5)

Country Link
US (3) US11281112B2 (https=)
EP (2) EP3970184A4 (https=)
JP (2) JP7254217B2 (https=)
TW (2) TWI814987B (https=)
WO (2) WO2020168142A1 (https=)

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