JP2022515096A - 表面イメージセンサの基板の製造プロセス - Google Patents
表面イメージセンサの基板の製造プロセス Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 239000004065 semiconductor Substances 0.000 claims abstract description 43
- 238000000034 method Methods 0.000 claims abstract description 33
- 150000002500 ions Chemical class 0.000 claims abstract description 18
- 238000005304 joining Methods 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- -1 helium ion Chemical class 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 abstract description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 22
- 239000002184 metal Substances 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 19
- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 230000002411 adverse Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- 238000011109 contamination Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
- H01L21/2652—Through-implantation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H01L27/1463—Pixel isolation structures
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
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- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Facsimile Heads (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
BOXを形成することが意図される酸化シリコン層で覆われており、シリコンの薄層を画定する脆化区域を備える、シリコンドナー基板を用意するステップと、
イオン注入によりトラップ層が形成されているキャリア基板を用意するステップと、
酸化物層を介してドナー基板とキャリア基板を接合するステップと、
シリコン薄層及び酸化物層をキャリア基板に転写するために脆化区域に沿ってドナー基板を分離するステップと、
イメージセンサの活性層の所望の厚さが得られるまで、転写後の薄層の上面に追加のシリコン層をエピタキシャル成長させるステップと
を含む。
転写されるべき半導体層を備えるドナー基板を用意するステップと、
半導体キャリア基板を用意するステップと、
キャリア基板にドナー基板を接合し接合界面に電気絶縁層があるステップと、
半導体層をキャリア基板に転写するステップと、
ガス状イオンを転写後の半導体層と電気絶縁層を通ってキャリア基板に注入するステップと、
注入する前記ステップの後、転写後の半導体層の上面に追加の半導体層をエピタキシャル成長させるステップと
を含む、プロセスを提案する。
転写されるべき前記半導体層を画定するためにドナー基板に脆化区域を形成することと、
接合するステップの後に脆化区域に沿ってドナー基板を分離することと
を含む。
図5に示されるようなSOI基板が作製され、前記SOI基板のいくつかを950℃までの温度で40分間加熱することによって、注入されたガス状イオンからキャビティを作り出すことによってトラップ層が形成された(図7参照)。
米国特許第6083324号明細書
米国特許出願公開第2010/0090303号明細書
Claims (11)
- 表面イメージセンサの基板を製造するプロセスであって、
転写されるべき半導体層(3a)を備えるドナー基板(30)を用意するステップと、
半導体キャリア基板(1)を用意するステップと、
前記キャリア基板(1)に前記ドナー基板(30)を接合し接合界面に電気絶縁層(2)があるステップと、
前記半導体層(3a)を前記キャリア基板(1)に転写するステップと、
ガス状イオン(40)を転写後の前記半導体層(3a)と前記電気絶縁層(2)を通って前記キャリア基板(1)に注入するステップと、
注入する前記ステップの後、転写後の前記半導体層(3a)の上面に追加の半導体層(3b)をエピタキシャル成長させるステップと、
を含む、プロセス。 - 注入されたガス状イオンからキャビティを作り出すのに適した温度で実行される熱処理を含み、前記キャビティが、前記キャリア基板(1)に金属原子をトラップする層(4)を形成する、請求項1に記載のプロセス。
- 前記熱処理が、前記追加の半導体層(3b)のエピタキシャル成長中に実行される、請求項2に記載のプロセス。
- 前記トラップ層(4)のキャビティ密度が、1015キャビティ/cm3以上である、請求項2又は3に記載のプロセス。
- 各半導体層(3a、3b)が、シリコン層である、請求項1~4のいずれか一項に記載のプロセス。
- 前記電気絶縁層(2)が、酸化シリコン層である、請求項1~5のいずれか一項に記載のプロセス。
- 前記電気絶縁層(2)が、誘電材料及び/又は金属材料のスタック(21、22、23)からなる、請求項1~6のいずれか一項に記載のプロセス。
- 前記電気絶縁層(2)の厚さが、5nm~400nm、好ましくは30nm~150nmである、請求項1~7のいずれか一項に記載のプロセス。
- 前記ガス状イオン(40)が、ヘリウムイオンを含む、請求項1~8のいずれか一項に記載のプロセス。
- 前記半導体層(3a)を転写する前記ステップが、
転写されるべき前記半導体層を画定するために前記ドナー基板に脆化区域(31)を形成することと、
接合する前記ステップの後に前記脆化区域(31)に沿って前記ドナー基板(30)を分離することと、
を含む、請求項1~9のいずれか一項に記載のプロセス。 - 表面イメージセンサを製造するプロセスであって、請求項1~10のいずれか一項に記載のプロセスを用いて基板を製造するステップと、転写後の半導体層(3a)と追加の半導体層(3b)をあわせて前記イメージセンサの活性層を形成するステップと、複数のピクセルを画定するために複数の電気絶縁トレンチ(5)を前記活性層に形成するステップとを含む、プロセス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1874134 | 2018-12-24 | ||
FR1874134A FR3091000B1 (fr) | 2018-12-24 | 2018-12-24 | Procede de fabrication d’un substrat pour un capteur d’image de type face avant |
PCT/FR2019/053281 WO2020136344A1 (fr) | 2018-12-24 | 2019-12-23 | Procede de fabrication d'un substrat pour un capteur d'image de type face avant |
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JP2022515096A true JP2022515096A (ja) | 2022-02-17 |
JP7392243B2 JP7392243B2 (ja) | 2023-12-06 |
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EP (1) | EP3903341B1 (ja) |
JP (1) | JP7392243B2 (ja) |
KR (1) | KR20210104876A (ja) |
FR (1) | FR3091000B1 (ja) |
IL (1) | IL284308B2 (ja) |
SG (1) | SG11202106829WA (ja) |
TW (1) | TWI810422B (ja) |
WO (1) | WO2020136344A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10256263A (ja) * | 1997-03-11 | 1998-09-25 | Nec Corp | Soi基板およびその製造方法 |
US20040097055A1 (en) * | 1997-07-18 | 2004-05-20 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
JP2006093175A (ja) * | 2004-09-21 | 2006-04-06 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2010062452A (ja) * | 2008-09-05 | 2010-03-18 | Sumco Corp | 半導体基板の製造方法 |
JP2013201188A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 固体撮像装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6083324A (en) | 1998-02-19 | 2000-07-04 | Silicon Genesis Corporation | Gettering technique for silicon-on-insulator wafers |
JP2010114409A (ja) | 2008-10-10 | 2010-05-20 | Sony Corp | Soi基板とその製造方法、固体撮像装置とその製造方法、および撮像装置 |
US8614112B2 (en) * | 2010-10-01 | 2013-12-24 | Omnivision Technologies, Inc. | Method of damage-free impurity doping for CMOS image sensors |
-
2018
- 2018-12-24 FR FR1874134A patent/FR3091000B1/fr active Active
-
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- 2019-12-23 JP JP2021535055A patent/JP7392243B2/ja active Active
- 2019-12-23 TW TW108147236A patent/TWI810422B/zh active
- 2019-12-23 WO PCT/FR2019/053281 patent/WO2020136344A1/fr unknown
- 2019-12-23 IL IL284308A patent/IL284308B2/en unknown
- 2019-12-23 SG SG11202106829WA patent/SG11202106829WA/en unknown
- 2019-12-23 KR KR1020217023211A patent/KR20210104876A/ko unknown
- 2019-12-23 EP EP19848983.3A patent/EP3903341B1/fr active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10256263A (ja) * | 1997-03-11 | 1998-09-25 | Nec Corp | Soi基板およびその製造方法 |
US20040097055A1 (en) * | 1997-07-18 | 2004-05-20 | Silicon Genesis Corporation | Gettering technique for wafers made using a controlled cleaving process |
JP2006093175A (ja) * | 2004-09-21 | 2006-04-06 | Sony Corp | 固体撮像素子及びその製造方法 |
JP2010062452A (ja) * | 2008-09-05 | 2010-03-18 | Sumco Corp | 半導体基板の製造方法 |
JP2013201188A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 固体撮像装置 |
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TW202101545A (zh) | 2021-01-01 |
EP3903341B1 (fr) | 2023-01-18 |
TWI810422B (zh) | 2023-08-01 |
IL284308B1 (en) | 2023-11-01 |
FR3091000A1 (fr) | 2020-06-26 |
IL284308A (en) | 2021-08-31 |
IL284308B2 (en) | 2024-03-01 |
CN113228248A (zh) | 2021-08-06 |
JP7392243B2 (ja) | 2023-12-06 |
WO2020136344A1 (fr) | 2020-07-02 |
EP3903341A1 (fr) | 2021-11-03 |
KR20210104876A (ko) | 2021-08-25 |
SG11202106829WA (en) | 2021-07-29 |
US20220059603A1 (en) | 2022-02-24 |
FR3091000B1 (fr) | 2020-12-04 |
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