JP2022507782A5 - - Google Patents

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Publication number
JP2022507782A5
JP2022507782A5 JP2021527838A JP2021527838A JP2022507782A5 JP 2022507782 A5 JP2022507782 A5 JP 2022507782A5 JP 2021527838 A JP2021527838 A JP 2021527838A JP 2021527838 A JP2021527838 A JP 2021527838A JP 2022507782 A5 JP2022507782 A5 JP 2022507782A5
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JP
Japan
Prior art keywords
grounding
bowl
support pedestal
conductive mesh
annular liner
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Application number
JP2021527838A
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English (en)
Japanese (ja)
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JP7465265B2 (ja
JP2022507782A (ja
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Priority claimed from PCT/US2019/057949 external-priority patent/WO2020106408A1/en
Publication of JP2022507782A publication Critical patent/JP2022507782A/ja
Publication of JP2022507782A5 publication Critical patent/JP2022507782A5/ja
Application granted granted Critical
Publication of JP7465265B2 publication Critical patent/JP7465265B2/ja
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JP2021527838A 2018-11-21 2019-10-24 位相制御を使用してプラズマ分布を調整するためのデバイス及び方法 Active JP7465265B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862770547P 2018-11-21 2018-11-21
US62/770,547 2018-11-21
PCT/US2019/057949 WO2020106408A1 (en) 2018-11-21 2019-10-24 Device and method for tuning plasma distribution using phase control

Publications (3)

Publication Number Publication Date
JP2022507782A JP2022507782A (ja) 2022-01-18
JP2022507782A5 true JP2022507782A5 (https=) 2022-11-01
JP7465265B2 JP7465265B2 (ja) 2024-04-10

Family

ID=70727094

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021527838A Active JP7465265B2 (ja) 2018-11-21 2019-10-24 位相制御を使用してプラズマ分布を調整するためのデバイス及び方法

Country Status (7)

Country Link
US (1) US11908662B2 (https=)
JP (1) JP7465265B2 (https=)
KR (1) KR102913190B1 (https=)
CN (1) CN112955997B (https=)
SG (1) SG11202103597SA (https=)
TW (1) TWI835901B (https=)
WO (1) WO2020106408A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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WO2023069211A1 (en) * 2021-10-18 2023-04-27 Lam Research Corporation Systems and methods for determining a phase difference between rf signals provided to electrodes
US12500106B2 (en) * 2022-05-03 2025-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
US20240331979A1 (en) * 2023-04-03 2024-10-03 Tokyo Electron Limited Apparatus and Methods for Plasma Processing
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Family Cites Families (30)

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JPH0747820B2 (ja) * 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
JPH05205898A (ja) 1991-07-24 1993-08-13 Tokyo Electron Yamanashi Kk プラズマ処理装置
US5314603A (en) 1991-07-24 1994-05-24 Tokyo Electron Yamanashi Limited Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber
JPH0613196A (ja) 1992-06-25 1994-01-21 Matsushita Electric Ind Co Ltd プラズマ発生方法および発生装置
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JP3328625B2 (ja) 1994-04-28 2002-09-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
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JPH10237657A (ja) * 1997-02-26 1998-09-08 Furontetsuku:Kk プラズマ処理装置
TW507256B (en) 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4672169B2 (ja) 2001-04-05 2011-04-20 キヤノンアネルバ株式会社 プラズマ処理装置
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
JP4773079B2 (ja) 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5396256B2 (ja) 2009-12-10 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
TWI572043B (zh) * 2010-06-10 2017-02-21 應用材料股份有限公司 具增強的游離及rf功率耦合的低電阻率鎢pvd
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