SG11202103597SA - Device and method for tuning plasma distribution using phase control - Google Patents

Device and method for tuning plasma distribution using phase control

Info

Publication number
SG11202103597SA
SG11202103597SA SG11202103597SA SG11202103597SA SG11202103597SA SG 11202103597S A SG11202103597S A SG 11202103597SA SG 11202103597S A SG11202103597S A SG 11202103597SA SG 11202103597S A SG11202103597S A SG 11202103597SA SG 11202103597S A SG11202103597S A SG 11202103597SA
Authority
SG
Singapore
Prior art keywords
phase control
plasma distribution
tuning plasma
tuning
distribution
Prior art date
Application number
SG11202103597SA
Other languages
English (en)
Inventor
Xiaopu Li
Kallol Bera
Edward P Hammond
Jonghoon Baek
Amit Kumar Bansal
Jun Ma
Satoru Kobayashi
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of SG11202103597SA publication Critical patent/SG11202103597SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202103597SA 2018-11-21 2019-10-24 Device and method for tuning plasma distribution using phase control SG11202103597SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862770547P 2018-11-21 2018-11-21
PCT/US2019/057949 WO2020106408A1 (en) 2018-11-21 2019-10-24 Device and method for tuning plasma distribution using phase control

Publications (1)

Publication Number Publication Date
SG11202103597SA true SG11202103597SA (en) 2021-06-29

Family

ID=70727094

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202103597SA SG11202103597SA (en) 2018-11-21 2019-10-24 Device and method for tuning plasma distribution using phase control

Country Status (7)

Country Link
US (1) US11908662B2 (https=)
JP (1) JP7465265B2 (https=)
KR (1) KR102913190B1 (https=)
CN (1) CN112955997B (https=)
SG (1) SG11202103597SA (https=)
TW (1) TWI835901B (https=)
WO (1) WO2020106408A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023069211A1 (en) * 2021-10-18 2023-04-27 Lam Research Corporation Systems and methods for determining a phase difference between rf signals provided to electrodes
US12500106B2 (en) * 2022-05-03 2025-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
US20240331979A1 (en) * 2023-04-03 2024-10-03 Tokyo Electron Limited Apparatus and Methods for Plasma Processing
US20260011900A1 (en) * 2024-07-06 2026-01-08 Applied Materials, Inc. Wideband tem to tm01 mode converter for microwave plasma systems

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4557819A (en) * 1984-07-20 1985-12-10 Varian Associates, Inc. System for igniting and controlling a wafer processing plasma
JPH0627341B2 (ja) 1988-02-05 1994-04-13 株式会社半導体エネルギー研究所 薄膜形成方法
JPH0747820B2 (ja) * 1989-09-22 1995-05-24 株式会社日立製作所 成膜装置
JPH05205898A (ja) 1991-07-24 1993-08-13 Tokyo Electron Yamanashi Kk プラズマ処理装置
US5314603A (en) 1991-07-24 1994-05-24 Tokyo Electron Yamanashi Limited Plasma processing apparatus capable of detecting and regulating actual RF power at electrode within chamber
JPH0613196A (ja) 1992-06-25 1994-01-21 Matsushita Electric Ind Co Ltd プラズマ発生方法および発生装置
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JP3328625B2 (ja) 1994-04-28 2002-09-30 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US5885356A (en) * 1994-11-30 1999-03-23 Applied Materials, Inc. Method of reducing residue accumulation in CVD chamber using ceramic lining
US5846332A (en) * 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
JPH10237657A (ja) * 1997-02-26 1998-09-08 Furontetsuku:Kk プラズマ処理装置
TW507256B (en) 2000-03-13 2002-10-21 Mitsubishi Heavy Ind Ltd Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
JP4672169B2 (ja) 2001-04-05 2011-04-20 キヤノンアネルバ株式会社 プラズマ処理装置
US7972467B2 (en) * 2003-04-17 2011-07-05 Applied Materials Inc. Apparatus and method to confine plasma and reduce flow resistance in a plasma reactor
JP4773079B2 (ja) 2004-11-26 2011-09-14 株式会社日立ハイテクノロジーズ プラズマ処理装置の制御方法
US7988815B2 (en) * 2007-07-26 2011-08-02 Applied Materials, Inc. Plasma reactor with reduced electrical skew using electrical bypass elements
US20090236214A1 (en) * 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
JP5396256B2 (ja) 2009-12-10 2014-01-22 東京エレクトロン株式会社 プラズマ処理装置
TWI572043B (zh) * 2010-06-10 2017-02-21 應用材料股份有限公司 具增強的游離及ｒｆ功率耦合的低電阻率鎢ｐｖｄ
TW201325326A (zh) 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US20130284369A1 (en) 2012-04-26 2013-10-31 Applied Materials, Inc. Two-phase operation of plasma chamber by phase locked loop
US9388494B2 (en) 2012-06-25 2016-07-12 Novellus Systems, Inc. Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region
US9312106B2 (en) * 2013-03-13 2016-04-12 Applied Materials, Inc. Digital phase controller for two-phase operation of a plasma reactor
US10125422B2 (en) * 2013-03-27 2018-11-13 Applied Materials, Inc. High impedance RF filter for heater with impedance tuning device
US9543158B2 (en) * 2014-12-04 2017-01-10 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
JP5800964B1 (ja) * 2014-07-22 2015-10-28 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
US10395895B2 (en) 2015-08-27 2019-08-27 Mks Instruments, Inc. Feedback control by RF waveform tailoring for ion energy distribution
KR102158668B1 (ko) * 2016-04-22 2020-09-22 어플라이드 머티어리얼스, 인코포레이티드 플라즈마 한정 피쳐들을 갖는 기판 지지 페디스털
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber

Also Published As

Publication number Publication date
TW202038292A (zh) 2020-10-16
TWI835901B (zh) 2024-03-21
US11908662B2 (en) 2024-02-20
JP7465265B2 (ja) 2024-04-10
CN112955997B (zh) 2024-04-05
KR102913190B1 (ko) 2026-01-14
KR20210080555A (ko) 2021-06-30
JP2022507782A (ja) 2022-01-18
WO2020106408A1 (en) 2020-05-28
CN112955997A (zh) 2021-06-11
US20200161093A1 (en) 2020-05-21

Similar Documents

Publication Publication Date Title
HUE066012T2 (hu) Aeroszolképzõ eszköz és eljárás annak vezérlésére
GB2571611B (en) Electronic apparatus, method for controlling same, and program
SG11202007028XA (en) Methods and apparatus for controlled rf treatments and rf generator system
EP3268835A4 (en) Method and apparatus for controlling temperature adjustment device
ZA202005512B (en) System and method for composite-key based blockchain device control
EP3355552A4 (en) Method and apparatus for controlling electronic device
SG11202007848SA (en) Access control methods and apparatus for radio systems
SG11202103597SA (en) Device and method for tuning plasma distribution using phase control
EP3668137A4 (en) NETWORK ACCESS AND ACCESS CONTROL PROCESS AND DEVICE
GB2566347B (en) Computer device and method for controlling process components
EP3389226A4 (en) Method and apparatus for controlling device
PL4059029T3 (pl) Urządzenie do utrzymywania plazmy oraz sposób utrzymywania plazmy
EP3785689A4 (en) Control device for massager and method therefor
EP3371985A4 (en) METHOD AND DEVICE FOR IMPLEMENTING AN ACCESS CONTROL
EP3531831B8 (en) Method and apparatus for weed control with microwaves
EP3346653A4 (en) Method and device for pilot frequency distribution
GB201809225D0 (en) Method and apparatus for access control
GB2579116B (en) Electronic apparatus and control method for electronic apparatus
SG11202007238XA (en) Apparatus and method for configuring small satellites
EP3724977A4 (en) METHOD AND DEVICE FOR POWER FACTOR ADJUSTMENT BY PHASE CONTROL
PL3307418T3 (pl) Sposób kontroli fazy adsorpcji generatora gazu oraz generator gazu stosujący ten sposób
GB201813451D0 (en) Plasma apparatus
IL278483B (en) A microwave plasma cvd facility with a large area and suitable method for providing such deposition
GB2546324B (en) Method and device for correcting antenna phase
IL264463A (en) Device and method for disinfecting herbs using plasma