JP2022502845A - ガス分配アセンブリおよびその動作 - Google Patents

ガス分配アセンブリおよびその動作 Download PDF

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Publication number
JP2022502845A
JP2022502845A JP2021516573A JP2021516573A JP2022502845A JP 2022502845 A JP2022502845 A JP 2022502845A JP 2021516573 A JP2021516573 A JP 2021516573A JP 2021516573 A JP2021516573 A JP 2021516573A JP 2022502845 A JP2022502845 A JP 2022502845A
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JP
Japan
Prior art keywords
face plate
processing chamber
angle
gas distribution
distribution assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021516573A
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English (en)
Japanese (ja)
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JPWO2020068299A5 (https=
JP2022502845A5 (https=
Inventor
プリヤンカー ダッシュ，
チーチュン チアン，
ガネーシュ バラスブラマニアン，
チアン マー，
カルヤンジット ゴーシュ，
カウシィク アラヤヴァッリ，
ユーシン チャン，
ダニエル ファン，
シャーヨン ジャファリ，
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Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2022502845A publication Critical patent/JP2022502845A/ja
Publication of JPWO2020068299A5 publication Critical patent/JPWO2020068299A5/ja
Publication of JP2022502845A5 publication Critical patent/JP2022502845A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Automation & Control Theory (AREA)
JP2021516573A 2018-09-26 2019-08-20 ガス分配アセンブリおよびその動作 Pending JP2022502845A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862736882P 2018-09-26 2018-09-26
US62/736,882 2018-09-26
PCT/US2019/047189 WO2020068299A1 (en) 2018-09-26 2019-08-20 Gas distribution assemblies and operation thereof

Publications (3)

Publication Number Publication Date
JP2022502845A true JP2022502845A (ja) 2022-01-11
JPWO2020068299A5 JPWO2020068299A5 (https=) 2022-08-31
JP2022502845A5 JP2022502845A5 (https=) 2022-08-31

Family

ID=69883686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021516573A Pending JP2022502845A (ja) 2018-09-26 2019-08-20 ガス分配アセンブリおよびその動作

Country Status (7)

Country Link
US (1) US20200098547A1 (https=)
JP (1) JP2022502845A (https=)
KR (1) KR20210049946A (https=)
CN (1) CN112714948A (https=)
SG (1) SG11202101349SA (https=)
TW (1) TW202027194A (https=)
WO (1) WO2020068299A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114763B1 (ja) 2021-02-15 2022-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113130354A (zh) * 2021-04-09 2021-07-16 长鑫存储技术有限公司 半导体生产装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
JP2007335465A (ja) * 2006-06-12 2007-12-27 Hitachi High-Technologies Corp プラズマ処理装置
US20100116437A1 (en) * 2008-11-07 2010-05-13 Tokyo Electron Limited Plasma processing apparatus and constituent part thereof
US20120222815A1 (en) * 2011-03-04 2012-09-06 Mohamed Sabri Hybrid ceramic showerhead
JP2017135170A (ja) * 2016-01-25 2017-08-03 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法

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US6553932B2 (en) * 2000-05-12 2003-04-29 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
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TW201204868A (en) * 2010-07-12 2012-02-01 Applied Materials Inc Compartmentalized chamber
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US20130102156A1 (en) * 2011-10-21 2013-04-25 Lam Research Corporation Components of plasma processing chambers having textured plasma resistant coatings
US9330939B2 (en) * 2012-03-28 2016-05-03 Applied Materials, Inc. Method of enabling seamless cobalt gap-fill
WO2013182878A2 (en) * 2012-06-07 2013-12-12 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
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TWI600786B (zh) * 2013-05-01 2017-10-01 應用材料股份有限公司 用於腔室清潔或預清潔製程之鈷移除
CN204134770U (zh) * 2013-08-14 2015-02-04 应用材料公司 用于沉积聚合物材料的工艺腔室和该工艺腔室中用的喷头
JP6156850B2 (ja) * 2014-12-25 2017-07-05 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理装置の部材の交換判断方法
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KR102251209B1 (ko) * 2016-06-15 2021-05-11 어플라이드 머티어리얼스, 인코포레이티드 고 전력 플라즈마 에칭 프로세스들을 위한 가스 분배 플레이트 조립체

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
JP2007335465A (ja) * 2006-06-12 2007-12-27 Hitachi High-Technologies Corp プラズマ処理装置
US20100116437A1 (en) * 2008-11-07 2010-05-13 Tokyo Electron Limited Plasma processing apparatus and constituent part thereof
JP2010135781A (ja) * 2008-11-07 2010-06-17 Tokyo Electron Ltd プラズマ処理装置及びその構成部品
US20120222815A1 (en) * 2011-03-04 2012-09-06 Mohamed Sabri Hybrid ceramic showerhead
JP2014509783A (ja) * 2011-03-04 2014-04-21 ノべラス・システムズ・インコーポレーテッド ハイブリッドセラミックシャワーヘッド
JP2017135170A (ja) * 2016-01-25 2017-08-03 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114763B1 (ja) 2021-02-15 2022-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
JP2022123942A (ja) * 2021-02-15 2022-08-25 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法

Also Published As

Publication number Publication date
SG11202101349SA (en) 2021-04-29
TW202027194A (zh) 2020-07-16
US20200098547A1 (en) 2020-03-26
WO2020068299A1 (en) 2020-04-02
CN112714948A (zh) 2021-04-27
KR20210049946A (ko) 2021-05-06

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