CN112714948A - 气体分配组件及其操作 - Google Patents

气体分配组件及其操作 Download PDF

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Publication number
CN112714948A
CN112714948A CN201980060100.4A CN201980060100A CN112714948A CN 112714948 A CN112714948 A CN 112714948A CN 201980060100 A CN201980060100 A CN 201980060100A CN 112714948 A CN112714948 A CN 112714948A
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China
Prior art keywords
process chamber
panel
gas distribution
angle
distribution assembly
Prior art date
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Pending
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CN201980060100.4A
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English (en)
Chinese (zh)
Inventor
P·达舍
蒋志钧
G·巴拉苏布拉马尼恩
Q·马
K·高希
K·阿拉亚瓦里
张宇星
D·黄
S·贾法里
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN112714948A publication Critical patent/CN112714948A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0612—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0616—Monitoring of warpages, curvatures, damages, defects or the like

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Automation & Control Theory (AREA)
CN201980060100.4A 2018-09-26 2019-08-20 气体分配组件及其操作 Pending CN112714948A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862736882P 2018-09-26 2018-09-26
US62/736,882 2018-09-26
PCT/US2019/047189 WO2020068299A1 (en) 2018-09-26 2019-08-20 Gas distribution assemblies and operation thereof

Publications (1)

Publication Number Publication Date
CN112714948A true CN112714948A (zh) 2021-04-27

Family

ID=69883686

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201980060100.4A Pending CN112714948A (zh) 2018-09-26 2019-08-20 气体分配组件及其操作

Country Status (7)

Country Link
US (1) US20200098547A1 (https=)
JP (1) JP2022502845A (https=)
KR (1) KR20210049946A (https=)
CN (1) CN112714948A (https=)
SG (1) SG11202101349SA (https=)
TW (1) TW202027194A (https=)
WO (1) WO2020068299A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7114763B1 (ja) 2021-02-15 2022-08-08 株式会社Kokusai Electric 半導体装置の製造方法、基板処理装置、プログラム、および基板処理方法
CN113130354A (zh) * 2021-04-09 2021-07-16 长鑫存储技术有限公司 半导体生产装置

Citations (21)

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Publication number Priority date Publication date Assignee Title
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US20010042511A1 (en) * 2000-05-12 2001-11-22 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020086118A1 (en) * 2000-12-29 2002-07-04 Chang Christopher C. Low contamination plasma chamber components and methods for making the same
US6460482B1 (en) * 2000-01-20 2002-10-08 Sumitomo Electric Industries, Ltd. Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
US20030132319A1 (en) * 2002-01-15 2003-07-17 Hytros Mark M. Showerhead assembly for a processing chamber
CN1681079A (zh) * 2004-02-26 2005-10-12 应用材料有限公司 用于前段工艺制造的原地干洗腔
JP2007335465A (ja) * 2006-06-12 2007-12-27 Hitachi High-Technologies Corp プラズマ処理装置
US20080072821A1 (en) * 2006-07-21 2008-03-27 Dalton Jeremic J Small volume symmetric flow single wafer ald apparatus
CN101194046A (zh) * 2004-06-09 2008-06-04 兰姆研究公司 用于等离子体处理腔的元件的石英表面的湿清洁方法
US20090179085A1 (en) * 2008-01-10 2009-07-16 Applied Materials, Inc. Heated showerhead assembly
CN101740298A (zh) * 2008-11-07 2010-06-16 东京毅力科创株式会社 等离子体处理装置及其构成部件
US20120009765A1 (en) * 2010-07-12 2012-01-12 Applied Materials, Inc. Compartmentalized chamber
TW201334020A (zh) * 2011-10-21 2013-08-16 Lam Res Corp 具備有刻紋的抗電漿塗層之電漿處理室的元件
US20140326276A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Cobalt removal for chamber clean or pre-clean process
CN204134770U (zh) * 2013-08-14 2015-02-04 应用材料公司 用于沉积聚合物材料的工艺腔室和该工艺腔室中用的喷头
CN104641457A (zh) * 2012-09-21 2015-05-20 应用材料公司 晶圆处理设备中的化学物质控制特征
TW201635330A (zh) * 2014-12-25 2016-10-01 Tokyo Electron Ltd 電漿處理裝置及電漿處理裝置之構件之交換判斷方法
CN106887380A (zh) * 2012-03-28 2017-06-23 应用材料公司 实现无缝钴间隙填充的方法
US20170365443A1 (en) * 2016-06-15 2017-12-21 Applied Materials, Inc. Gas distribution plate assembly for high power plasma etch processes
CN108475610A (zh) * 2015-12-18 2018-08-31 应用材料公司 在非对称的腔室环境中的均匀晶片温度实现

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101004903B1 (ko) * 2008-07-04 2010-12-28 삼성엘이디 주식회사 화학 기상 증착 장치
US20120052216A1 (en) * 2010-08-27 2012-03-01 Applied Materials, Inc. Gas distribution showerhead with high emissivity surface
CN106884157B (zh) * 2011-03-04 2019-06-21 诺发系统公司 混合型陶瓷喷淋头
WO2013182878A2 (en) * 2012-06-07 2013-12-12 Soitec Gas injection components for deposition systems, deposition systems including such components, and related methods
JP2017135170A (ja) * 2016-01-25 2017-08-03 株式会社ニューフレアテクノロジー 気相成長装置及び気相成長方法

Patent Citations (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0955374A (ja) * 1995-06-08 1997-02-25 Tokyo Electron Ltd プラズマ処理装置
US6176930B1 (en) * 1999-03-04 2001-01-23 Applied Materials, Inc. Apparatus and method for controlling a flow of process material to a deposition chamber
US6460482B1 (en) * 2000-01-20 2002-10-08 Sumitomo Electric Industries, Ltd. Gas shower unit for semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
US20010042511A1 (en) * 2000-05-12 2001-11-22 Applied Materials, Inc. Reduction of plasma edge effect on plasma enhanced CVD processes
US20020086118A1 (en) * 2000-12-29 2002-07-04 Chang Christopher C. Low contamination plasma chamber components and methods for making the same
US20030132319A1 (en) * 2002-01-15 2003-07-17 Hytros Mark M. Showerhead assembly for a processing chamber
CN1681079A (zh) * 2004-02-26 2005-10-12 应用材料有限公司 用于前段工艺制造的原地干洗腔
CN101194046A (zh) * 2004-06-09 2008-06-04 兰姆研究公司 用于等离子体处理腔的元件的石英表面的湿清洁方法
JP2007335465A (ja) * 2006-06-12 2007-12-27 Hitachi High-Technologies Corp プラズマ処理装置
US20080072821A1 (en) * 2006-07-21 2008-03-27 Dalton Jeremic J Small volume symmetric flow single wafer ald apparatus
US20090179085A1 (en) * 2008-01-10 2009-07-16 Applied Materials, Inc. Heated showerhead assembly
CN101740298A (zh) * 2008-11-07 2010-06-16 东京毅力科创株式会社 等离子体处理装置及其构成部件
JP2010135781A (ja) * 2008-11-07 2010-06-17 Tokyo Electron Ltd プラズマ処理装置及びその構成部品
US20120009765A1 (en) * 2010-07-12 2012-01-12 Applied Materials, Inc. Compartmentalized chamber
TW201334020A (zh) * 2011-10-21 2013-08-16 Lam Res Corp 具備有刻紋的抗電漿塗層之電漿處理室的元件
CN106887380A (zh) * 2012-03-28 2017-06-23 应用材料公司 实现无缝钴间隙填充的方法
CN104641457A (zh) * 2012-09-21 2015-05-20 应用材料公司 晶圆处理设备中的化学物质控制特征
US20140326276A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Cobalt removal for chamber clean or pre-clean process
CN204134770U (zh) * 2013-08-14 2015-02-04 应用材料公司 用于沉积聚合物材料的工艺腔室和该工艺腔室中用的喷头
TW201635330A (zh) * 2014-12-25 2016-10-01 Tokyo Electron Ltd 電漿處理裝置及電漿處理裝置之構件之交換判斷方法
CN108475610A (zh) * 2015-12-18 2018-08-31 应用材料公司 在非对称的腔室环境中的均匀晶片温度实现
US20170365443A1 (en) * 2016-06-15 2017-12-21 Applied Materials, Inc. Gas distribution plate assembly for high power plasma etch processes

Also Published As

Publication number Publication date
SG11202101349SA (en) 2021-04-29
TW202027194A (zh) 2020-07-16
US20200098547A1 (en) 2020-03-26
JP2022502845A (ja) 2022-01-11
WO2020068299A1 (en) 2020-04-02
KR20210049946A (ko) 2021-05-06

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