JP2022189793A5 - - Google Patents

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Publication number
JP2022189793A5
JP2022189793A5 JP2022093745A JP2022093745A JP2022189793A5 JP 2022189793 A5 JP2022189793 A5 JP 2022189793A5 JP 2022093745 A JP2022093745 A JP 2022093745A JP 2022093745 A JP2022093745 A JP 2022093745A JP 2022189793 A5 JP2022189793 A5 JP 2022189793A5
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JP
Japan
Prior art keywords
group
control
semiconductor switches
terminal
power semiconductor
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Application number
JP2022093745A
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English (en)
Japanese (ja)
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JP2022189793A (ja
JP7819038B2 (ja
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Priority claimed from EP21178802.1A external-priority patent/EP4102559B1/en
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Publication of JP2022189793A publication Critical patent/JP2022189793A/ja
Publication of JP2022189793A5 publication Critical patent/JP2022189793A5/ja
Application granted granted Critical
Publication of JP7819038B2 publication Critical patent/JP7819038B2/ja
Active legal-status Critical Current
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JP2022093745A 2021-06-10 2022-06-09 パワー半導体モジュール Active JP7819038B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP21178802.1A EP4102559B1 (en) 2021-06-10 2021-06-10 Power semiconductor module
EP21178802 2021-06-10

Publications (3)

Publication Number Publication Date
JP2022189793A JP2022189793A (ja) 2022-12-22
JP2022189793A5 true JP2022189793A5 (https=) 2025-06-12
JP7819038B2 JP7819038B2 (ja) 2026-02-24

Family

ID=76421920

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022093745A Active JP7819038B2 (ja) 2021-06-10 2022-06-09 パワー半導体モジュール

Country Status (4)

Country Link
US (1) US12293973B2 (https=)
EP (1) EP4102559B1 (https=)
JP (1) JP7819038B2 (https=)
CN (1) CN115472594A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2025191974A1 (https=) * 2024-03-11 2025-09-18
CN119314974B (zh) * 2024-12-13 2025-04-11 北京怀柔实验室 功率半导体封装结构

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1298802A1 (de) * 2001-09-28 2003-04-02 ABB Schweiz AG Verfahren zum Ansteuern eines Leistungshalbleiters
US6939743B2 (en) 2002-01-29 2005-09-06 Advanced Power Technology, Inc. Split-gate power module and method for suppressing oscillation therein
CN103199017B (zh) 2003-12-30 2016-08-03 飞兆半导体公司 形成掩埋导电层方法、材料厚度控制法、形成晶体管方法
US8154874B2 (en) 2006-06-21 2012-04-10 International Rectifier Corporation Use of flexible circuits in a power module for forming connections to power devices
EP2182551A1 (en) * 2008-10-29 2010-05-05 ABB Research Ltd. Connection arrangement for semiconductor power modules
WO2014090685A1 (de) 2012-12-10 2014-06-19 Abb Technology Ag Leistungshalbleitermodul und kontaktierungsanordnung
US9355950B1 (en) * 2015-01-08 2016-05-31 Infineon Technologies Ag Power semiconductor module having low gate drive inductance flexible board connection
EP3113223A1 (en) 2015-07-02 2017-01-04 ABB Technology AG Power semiconductor module
EP3168873A1 (en) 2015-11-11 2017-05-17 ABB Technology AG Power semiconductor module
WO2017157486A1 (en) 2016-03-16 2017-09-21 Abb Schweiz Ag Semiconductor device
US10250115B2 (en) * 2016-11-02 2019-04-02 Ford Global Technologies, Llc Inverter switching devices with common source inductance layout to avoid shoot-through
JP6865838B2 (ja) * 2017-09-04 2021-04-28 三菱電機株式会社 半導体モジュール及び電力変換装置
US11075589B2 (en) * 2019-05-20 2021-07-27 Ford Global Technologies, Llc DC inverter/converter current balancing for paralleled phase leg switches
CN110867438A (zh) 2019-09-30 2020-03-06 臻驱科技（上海）有限公司 功率半导体模块衬底

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