JP2022161979A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2022161979A5 JP2022161979A5 JP2022128939A JP2022128939A JP2022161979A5 JP 2022161979 A5 JP2022161979 A5 JP 2022161979A5 JP 2022128939 A JP2022128939 A JP 2022128939A JP 2022128939 A JP2022128939 A JP 2022128939A JP 2022161979 A5 JP2022161979 A5 JP 2022161979A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- silicon
- containing film
- film
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862683142P | 2018-06-11 | 2018-06-11 | |
| US62/683,142 | 2018-06-11 | ||
| US16/433,585 US12221692B2 (en) | 2016-02-26 | 2019-06-06 | Compositions and methods using same for deposition of silicon-containing film |
| US16/433,585 | 2019-06-06 | ||
| JP2020568739A JP7125515B2 (ja) | 2018-06-11 | 2019-06-11 | 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020568739A Division JP7125515B2 (ja) | 2018-06-11 | 2019-06-11 | 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022161979A JP2022161979A (ja) | 2022-10-21 |
| JP2022161979A5 true JP2022161979A5 (OSRAM) | 2023-01-20 |
| JP7485732B2 JP7485732B2 (ja) | 2024-05-16 |
Family
ID=68764690
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020568739A Active JP7125515B2 (ja) | 2018-06-11 | 2019-06-11 | 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 |
| JP2022128939A Active JP7485732B2 (ja) | 2018-06-11 | 2022-08-12 | 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020568739A Active JP7125515B2 (ja) | 2018-06-11 | 2019-06-11 | 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP3802913A4 (OSRAM) |
| JP (2) | JP7125515B2 (OSRAM) |
| KR (1) | KR102549427B1 (OSRAM) |
| CN (1) | CN112292479A (OSRAM) |
| IL (1) | IL279250B2 (OSRAM) |
| SG (1) | SG11202011890XA (OSRAM) |
| TW (2) | TWI720506B (OSRAM) |
| WO (1) | WO2019241183A1 (OSRAM) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11776846B2 (en) * | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
| JP7754923B2 (ja) * | 2020-09-30 | 2025-10-15 | ジェレスト， インコーポレイテッド | 炭化ケイ素薄膜及びその蒸着方法 |
| CN115747761A (zh) * | 2022-12-07 | 2023-03-07 | 拓荆科技(上海)有限公司 | 一种薄膜固化方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6436824B1 (en) * | 1999-07-02 | 2002-08-20 | Chartered Semiconductor Manufacturing Ltd. | Low dielectric constant materials for copper damascene |
| JP2007184611A (ja) | 2001-01-22 | 2007-07-19 | Tokyo Electron Ltd | プラズマ処理装置およびプラズマ処理方法 |
| US7491658B2 (en) * | 2004-10-13 | 2009-02-17 | International Business Machines Corporation | Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality |
| US9245739B2 (en) * | 2006-11-01 | 2016-01-26 | Lam Research Corporation | Low-K oxide deposition by hydrolysis and condensation |
| US7867923B2 (en) * | 2007-10-22 | 2011-01-11 | Applied Materials, Inc. | High quality silicon oxide films by remote plasma CVD from disilane precursors |
| US20130217240A1 (en) * | 2011-09-09 | 2013-08-22 | Applied Materials, Inc. | Flowable silicon-carbon-nitrogen layers for semiconductor processing |
| WO2015105633A1 (en) * | 2014-01-13 | 2015-07-16 | Applied Materials, Inc. | Carbon dioxide and carbon monoxide mediated curing of low k films to increase hardness and modulus |
| SG11201703195QA (en) * | 2014-10-24 | 2017-05-30 | Versum Materials Us Llc | Compositions and methods using same for deposition of silicon-containing film |
| TWI617693B (zh) * | 2015-12-21 | 2018-03-11 | Versum Materials Us, Llc | 用於沉積含矽膜的組合物及其方法 |
| CN114231947A (zh) * | 2016-02-26 | 2022-03-25 | 弗萨姆材料美国有限责任公司 | 组合物和使用其沉积含硅膜的方法 |
| KR102259262B1 (ko) * | 2016-07-19 | 2021-05-31 | 어플라이드 머티어리얼스, 인코포레이티드 | 유동성 실리콘-함유 막들의 증착 |
| US11735413B2 (en) * | 2016-11-01 | 2023-08-22 | Versum Materials Us, Llc | Precursors and flowable CVD methods for making low-k films to fill surface features |
| US20180148833A1 (en) * | 2016-11-25 | 2018-05-31 | Applied Materials, Inc. | Methods for depositing flowable silicon containing films using hot wire chemical vapor deposition |
-
2019
- 2019-06-11 SG SG11202011890XA patent/SG11202011890XA/en unknown
- 2019-06-11 JP JP2020568739A patent/JP7125515B2/ja active Active
- 2019-06-11 KR KR1020217000711A patent/KR102549427B1/ko active Active
- 2019-06-11 IL IL279250A patent/IL279250B2/en unknown
- 2019-06-11 EP EP19820430.7A patent/EP3802913A4/en active Pending
- 2019-06-11 TW TW108120022A patent/TWI720506B/zh active
- 2019-06-11 CN CN201980039035.7A patent/CN112292479A/zh active Pending
- 2019-06-11 WO PCT/US2019/036456 patent/WO2019241183A1/en not_active Ceased
- 2019-06-11 TW TW110105968A patent/TWI850530B/zh active
-
2022
- 2022-08-12 JP JP2022128939A patent/JP7485732B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7152576B2 (ja) | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 | |
| JP6777754B2 (ja) | ケイ素含有膜の堆積のための組成物及びそれを使用した方法 | |
| JP7855039B2 (ja) | 炭素ドープされた酸化ケイ素の堆積 | |
| JP6845252B2 (ja) | ケイ素含有膜の堆積のための組成物及びそれを用いた方法 | |
| JP6018149B2 (ja) | 窒化ケイ素膜被着方法 | |
| CN1244716C (zh) | 通过使用三(二甲基氨基)硅烷的原子层沉积形成含硅薄膜的方法 | |
| JP2024159770A5 (OSRAM) | ||
| JP2023182658A5 (OSRAM) | ||
| KR100961805B1 (ko) | 산화규소 함유 필름의 형성 방법 | |
| JP2004274052A5 (OSRAM) | ||
| TWI710659B (zh) | 矽氧烷組合物及使用該組合物沉積含矽膜的方法 | |
| JP2009111382A5 (OSRAM) | ||
| JP3627106B2 (ja) | 原子層吸着堆積法によるハフニウムシリケート薄膜の製造方法 | |
| JP2010507259A5 (OSRAM) | ||
| JP2018506185A5 (OSRAM) | ||
| CN106488924A (zh) | 新的氨基‑甲硅烷基胺化合物以及通过使用原子层沉积制造包含Si‑N键的介电膜的方法 | |
| WO2014203892A1 (ja) | ガスバリア性フィルム、およびその製造方法 | |
| KR20210047966A (ko) | 실리콘 및 질소 함유 막의 제조 방법 | |
| JP7485732B2 (ja) | 組成物、及びケイ素含有膜の堆積のための組成物を使用する方法 | |
| Lien et al. | Mechanism of dense silicon dioxide films deposited under 100° C via inductively coupled plasma chemical vapor deposition | |
| JP2022511822A5 (OSRAM) | ||
| TWI918082B (zh) | 穩定的有機矽烷組合物及使用其形成密低k膜的方法 | |
| JP4353379B2 (ja) | 膜形成材料、膜形成方法、及び素子 |