JP2022119382A - 光電変換装置、光電変換システム、移動体 - Google Patents

光電変換装置、光電変換システム、移動体 Download PDF

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Publication number
JP2022119382A
JP2022119382A JP2021016454A JP2021016454A JP2022119382A JP 2022119382 A JP2022119382 A JP 2022119382A JP 2021016454 A JP2021016454 A JP 2021016454A JP 2021016454 A JP2021016454 A JP 2021016454A JP 2022119382 A JP2022119382 A JP 2022119382A
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Japan
Prior art keywords
substrate
photoelectric conversion
conversion device
heat dissipation
region
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Pending
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JP2021016454A
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English (en)
Japanese (ja)
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JP2022119382A5 (https=
Inventor
哲也 板野
Tetsuya Itano
昌弘 小林
Masahiro Kobayashi
恒一 中村
Koichi Nakamura
篤 古林
Atsushi Furubayashi
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Canon Inc
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Canon Inc
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Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2021016454A priority Critical patent/JP2022119382A/ja
Priority to US17/590,672 priority patent/US20220246661A1/en
Publication of JP2022119382A publication Critical patent/JP2022119382A/ja
Publication of JP2022119382A5 publication Critical patent/JP2022119382A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N20/00—Machine learning
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/08—Learning methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/60—Arrangements for cooling, heating, ventilating or compensating for temperature fluctuations

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Software Systems (AREA)
  • Physics & Mathematics (AREA)
  • Artificial Intelligence (AREA)
  • General Engineering & Computer Science (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Medical Informatics (AREA)
  • Biomedical Technology (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Computational Linguistics (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2021016454A 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体 Pending JP2022119382A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2021016454A JP2022119382A (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体
US17/590,672 US20220246661A1 (en) 2021-02-04 2022-02-01 Photoelectric conversion apparatus, photoelectric conversion system, and mobile body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2021016454A JP2022119382A (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体

Publications (2)

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JP2022119382A true JP2022119382A (ja) 2022-08-17
JP2022119382A5 JP2022119382A5 (https=) 2024-02-01

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JP2021016454A Pending JP2022119382A (ja) 2021-02-04 2021-02-04 光電変換装置、光電変換システム、移動体

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US (1) US20220246661A1 (https=)
JP (1) JP2022119382A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024101204A1 (ja) * 2022-11-10 2024-05-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び積層基板

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2022119375A (ja) * 2021-02-04 2022-08-17 キヤノン株式会社 光電変換装置

Citations (11)

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JP2865099B1 (ja) * 1997-10-15 1999-03-08 日本電気株式会社 半導体装置
JP2004179309A (ja) * 2002-11-26 2004-06-24 New Japan Radio Co Ltd プリント回路基板の放熱構造とその製造方法
JP2008258578A (ja) * 2007-03-12 2008-10-23 Denso Corp 半導体装置
JP2009118145A (ja) * 2007-11-06 2009-05-28 Canon Inc 半導体ユニット及びカメラ
JP2010021451A (ja) * 2008-07-14 2010-01-28 Panasonic Corp 固体撮像装置およびその製造方法
WO2013118618A1 (ja) * 2012-02-08 2013-08-15 ソニー株式会社 高周波半導体装置およびその製造方法
JP2017504216A (ja) * 2014-01-23 2017-02-02 中国科学院蘇州納米技術与納米▲ファン▼生研究所 ウエハレベル半導体デバイス及びその製造方法
JP6214132B2 (ja) * 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2020025264A (ja) * 2018-07-31 2020-02-13 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び車載撮像装置
JP2020072410A (ja) * 2018-10-31 2020-05-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
JP2020182219A (ja) * 2018-07-31 2020-11-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器及び制御方法

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US7705342B2 (en) * 2005-09-16 2010-04-27 University Of Cincinnati Porous semiconductor-based evaporator having porous and non-porous regions, the porous regions having through-holes
US8083372B2 (en) * 2008-04-25 2011-12-27 Epson Imaging Devices Corporation Illumination system, electro-optic device, and electronic apparatus
US8039797B2 (en) * 2008-11-13 2011-10-18 Han Vision Co., Ltd. Semiconductor for sensing infrared radiation and method thereof
US8274101B2 (en) * 2009-10-20 2012-09-25 Omnivision Technologies, Inc. CMOS image sensor with heat management structures
JP5911201B2 (ja) * 2011-04-20 2016-04-27 キヤノン株式会社 カメラ装置の自動追尾制御装置及びそれを有する自動追尾カメラシステム
JP6090060B2 (ja) * 2013-08-23 2017-03-08 株式会社豊田中央研究所 シングルフォトンアバランシェダイオード
US10083499B1 (en) * 2016-10-11 2018-09-25 Google Llc Methods and apparatus to reduce compression artifacts in images
KR102430496B1 (ko) * 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
JP7527755B2 (ja) * 2018-02-09 2024-08-05 キヤノン株式会社 光電変換装置および撮像システム

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2865099B1 (ja) * 1997-10-15 1999-03-08 日本電気株式会社 半導体装置
JP2004179309A (ja) * 2002-11-26 2004-06-24 New Japan Radio Co Ltd プリント回路基板の放熱構造とその製造方法
JP2008258578A (ja) * 2007-03-12 2008-10-23 Denso Corp 半導体装置
JP2009118145A (ja) * 2007-11-06 2009-05-28 Canon Inc 半導体ユニット及びカメラ
JP2010021451A (ja) * 2008-07-14 2010-01-28 Panasonic Corp 固体撮像装置およびその製造方法
WO2013118618A1 (ja) * 2012-02-08 2013-08-15 ソニー株式会社 高周波半導体装置およびその製造方法
JP6214132B2 (ja) * 2012-02-29 2017-10-18 キヤノン株式会社 光電変換装置、撮像システムおよび光電変換装置の製造方法
JP2017504216A (ja) * 2014-01-23 2017-02-02 中国科学院蘇州納米技術与納米▲ファン▼生研究所 ウエハレベル半導体デバイス及びその製造方法
JP2020025264A (ja) * 2018-07-31 2020-02-13 ソニーセミコンダクタソリューションズ株式会社 積層型受光センサ及び車載撮像装置
JP2020182219A (ja) * 2018-07-31 2020-11-05 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、電子機器及び制御方法
JP2020072410A (ja) * 2018-10-31 2020-05-07 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024101204A1 (ja) * 2022-11-10 2024-05-16 ソニーセミコンダクタソリューションズ株式会社 光検出装置及び積層基板

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