JP2022113695A - フリップチップ形状の低フットプリント共振器 - Google Patents
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- 239000000758 substrate Substances 0.000 claims abstract description 126
- 239000002887 superconductor Substances 0.000 claims abstract description 7
- 239000002096 quantum dot Substances 0.000 claims description 71
- 230000010365 information processing Effects 0.000 claims description 22
- 230000004907 flux Effects 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 239000010955 niobium Substances 0.000 claims description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 29
- 239000000463 material Substances 0.000 description 28
- 239000010409 thin film Substances 0.000 description 23
- 230000008878 coupling Effects 0.000 description 10
- 238000010168 coupling process Methods 0.000 description 10
- 238000005859 coupling reaction Methods 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000003989 dielectric material Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000005233 quantum mechanics related processes and functions Effects 0.000 description 2
- 238000012216 screening Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000205 computational method Methods 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/80—Constructional details
- H10N60/805—Constructional details for Josephson-effect devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
- G06N10/40—Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- G06N10/00—Quantum computing, i.e. information processing based on quantum-mechanical phenomena
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
- H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/003—Coplanar lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
- H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/02—Coupling devices of the waveguide type with invariable factor of coupling
- H01P5/022—Transitions between lines of the same kind and shape, but with different dimensions
- H01P5/028—Transitions between lines of the same kind and shape, but with different dimensions between strip lines
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract
Description
200 導波路の第一部分
204 第一基板
206 第二基板
210 導波路の第二部分
220 導波路
222 第一トレース
224 第二トレース
226 バンプ接合
230 バリア層
Claims (20)
- 主面を有する第一基板と、
主面を有する第二基板であって、前記第一基板の主面が該第二基板の主面と向き合うように前記第一基板が該第二基板にバンプ接合されている、第二基板と、
マイクロ波周波数共振モードを有する回路素子であって、該回路素子の第一部分が前記第一基板の主面上に位置し、該回路素子の第二部分が前記第二基板の主面上に位置する、回路素子と、
前記回路素子の第一部分及び前記回路素子の第二部分に接続された第一バンプ接合と、を備え、第一超伝導バンプ接合が前記第一部分と前記第二部分との間の電気的接続を提供する、デバイス。 - 前記マイクロ波周波数共振モードが1GHzから20GHzの範囲内にある、請求項1に記載のデバイス。
- 前記回路素子が量子情報処理デバイスである、請求項1に記載のデバイス。
- 前記量子情報処理デバイスが量子ビットである、請求項3に記載のデバイス。
- 前記回路素子の第一部分がコプレーナ導波路を備え、前記回路素子の第二部分が超伝導量子干渉デバイスを備える、請求項4に記載のデバイス。
- 前記量子ビットがコプレーナ導波路磁束量子ビットである、請求項5に記載のデバイス。
- 前記回路素子の第一部分が、第一電極と、第二電極の第一部分と、ジョセフソン接合とを備え、前記回路素子の第二部分が前記第二電極の第二部分を備える、請求項4に記載のデバイス。
- 前記量子ビットがトランズモン量子ビットである、請求項7に記載のデバイス。
- 前記量子ビットが、コプレーナ導波路磁束量子ビット、トランズモン量子ビット、Gmon(Gモン)量子ビット、Fluxonium(フラクソニウム)量子ビット、電荷量子ビット、Quantronium(クオントロニウム)量子ビット、又は0‐π量子ビットである、請求項4に記載のデバイス。
- 前記回路素子がコプレーナ導波路共振器である、請求項1に記載のデバイス。
- 前記回路素子の第一部分が、前記第二基板上の前記回路素子の第二部分に対して前記第一基板の面に沿って横方向にずらされている、請求項10に記載のデバイス。
- 前記第一部分と前記第二部分の各々が、前記コプレーナ導波路共振器の略半分を備える、請求項10に記載のデバイス。
- 前記回路素子の第一部分が前記コプレーナ導波路の10%から50%を備える、請求項10に記載のデバイス。
- 前記回路素子の第一部分と前記回路素子の第二部分と前記第一バンプ接合の各々が超伝導体を備える、請求項1に記載のデバイス。
- 前記回路素子の第一部分及び前記回路素子の第二部分に接続された第二バンプ接合であって、前記回路素子の前記第一部分と前記第二部分との間の電気的接続を提供する第二バンプ接合を更に備える請求項1に記載のデバイス。
- 超伝導バンプ接合がインジウムとレニウムとパラジウムとニオブとのうちの一種以上を備える、請求項1に記載のデバイス。
- デバイスを製造する方法であって、
主面を有する第一基板であって、マイクロ波周波数共振モードを有する回路素子の第一部分を備える第一基板を提供することと、
主面を有する第二基板であって、前記マイクロ波周波数共振モードを有する回路素子の第二部分を備える第二基板を提供することと、
複数のバンプ接合を用いて前記第一基板を前記第二基板に接合することと、を備え、
前記複数のバンプ接合のうちの第一バンプ接合が前記回路素子の第一部分及び前記回路素子の第二部分に接続して、前記第一部分と前記第二部分との間の電気的接続を提供する、方法。 - 前記回路素子がコプレーナ導波路共振器である、請求項17に記載の方法。
- 前記回路素子が量子ビットである、請求項17に記載の方法。
- 前記回路素子の第一部分と前記回路素子の第二部分と前記複数のバンプ接合の各々が超伝導体を備える、請求項17に記載の方法。
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PCT/US2017/055265 WO2019070265A1 (en) | 2017-10-05 | 2017-10-05 | LOW-DIMENSIONAL RESONATOR IN RETURNED CHIP GEOMETRY |
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US10950778B2 (en) * | 2019-01-07 | 2021-03-16 | Northrop Grumman Systems Corporation | Superconducting bump bond electrical characterization |
CN113517530B (zh) * | 2020-07-22 | 2022-08-23 | 阿里巴巴集团控股有限公司 | 量子芯片的制备方法、装置、设备及量子芯片 |
US12015185B2 (en) * | 2021-03-03 | 2024-06-18 | International Business Machines Corporation | Quantum transducers with embedded optical resonators |
US11657314B1 (en) * | 2021-03-03 | 2023-05-23 | International Business Machines Corporation | Microwave-to-optical quantum transducers |
JP2024526085A (ja) | 2021-06-11 | 2024-07-17 | シーク, インコーポレイテッド | 超伝導量子回路のための磁束バイアスのシステム及び方法 |
CN115968251A (zh) * | 2021-10-08 | 2023-04-14 | 腾讯科技(深圳)有限公司 | 量子比特组件、量子比特组件制备方法、芯片及设备 |
US11777478B2 (en) | 2021-12-10 | 2023-10-03 | International Business Machines Corporation | DC conversion of half- to quarter-wave resonators for crosstalk suppression in superconducting qubits |
CN115241365B (zh) * | 2022-09-23 | 2022-12-13 | 材料科学姑苏实验室 | 一种超导量子比特芯片及其制备方法与量子计算机 |
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Publication number | Publication date |
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US11527696B2 (en) | 2022-12-13 |
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US20230056318A1 (en) | 2023-02-23 |
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