JP2022080348A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 76
- 238000003860 storage Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 18
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
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- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
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- 239000010949 copper Substances 0.000 description 4
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
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- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- -1 Metal Oxide Nitride Chemical class 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- OKZIUSOJQLYFSE-UHFFFAOYSA-N difluoroboron Chemical compound F[B]F OKZIUSOJQLYFSE-UHFFFAOYSA-N 0.000 description 1
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- PCLURTMBFDTLSK-UHFFFAOYSA-N nickel platinum Chemical compound [Ni].[Pt] PCLURTMBFDTLSK-UHFFFAOYSA-N 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
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- 238000005121 nitriding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42344—Gate electrodes for transistors with charge trapping gate insulator with at least one additional gate, e.g. program gate, erase gate or select gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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Abstract
Description
<メモリセルMC1の構造>
本実施の形態における不揮発性メモリセルであるメモリセルMC1を備える半導体装置について、図面を参照しながら説明する。図1は、本実施の形態の半導体装置の断面図であり、図4は、図1の要部を拡大した断面図である。
以下に、不揮発性メモリセルであるメモリセルMC1の動作例について、図2および図3を参照して説明する。なお、ここで説明するメモリセルMC1は、半導体装置内に存在している複数のメモリセルMC1のうち、選択メモリセルである。
図4は、図1に示される半導体装置の要部を拡大した断面図であり、ゲート絶縁膜MZの詳細な構造を示す断面図である。
不揮発性半導体装置においては、メモリ周辺回路の面積を縮小する観点から、メモリセルを動作させるための高電圧回路の動作電圧を下げることが重要である。すなわち、半導体装置を微細化するためには、メモリセルの低電圧動作を実現することが重要である。
以下に、図8~図13を用いて、本実施の形態の半導体装置の製造方法を説明する。
前記実施の形態1では、1つのトランジスタにより構成されたメモリセルについて説明したが、メモリセルは2つトランジスタ(制御ゲート電極およびメモリゲート電極)により構成されていてもよい。以下では、制御ゲート電極およびメモリゲート電極により構成され、メモリゲート電極の下のゲート絶縁膜内の電荷蓄積層を2層構造とすることについて、図13を用いて説明する。図13は、本実施の形態の半導体装置であるメモリセルを示す断面図である。なお、ここでは図1と異なり、層間絶縁膜、プラグおよび配線の図示を省略している。また、前記実施の形態1では、ゲート絶縁膜MZおよびメモリゲート電極MGを、ダミーゲート電極等を除去した溝に埋め込む場合について説明したが、ここでは、層間絶縁膜を形成する前にゲート絶縁膜MZおよびメモリゲート電極MGを形成する場合について説明する。
2つトランジスタによりメモリセルを構成する場合、図14に示す本変形例のように、制御ゲート電極CGとメモリゲート電極MGとは、電荷蓄積層を含むゲート絶縁膜MZを介して隣接していてもよい。図14は、本変形例の半導体装置であるメモリセルを示す断面図である。
2つトランジスタによりメモリセルを構成する場合、図15に示す本変形例のように、制御ゲート電極CGとメモリゲート電極MGとは、電荷蓄積層を含まないゲート絶縁膜GFを介して隣接していてもよい。図15は、本変形例の半導体装置であるメモリセルを示す断面図である。
CG 制御ゲート電極
CSL 電荷蓄積層
EXD エクステンション領域
EXS エクステンション領域
GF ゲート絶縁膜
HSO1、HSO2 絶縁膜
IL1~IL3 層間絶縁膜
MC1~MC4 メモリセル
MD 拡散領域
MG メモリゲート電極
MS 拡散領域
MZ ゲート絶縁膜
PG プラグ
PW ウェル領域
SB 半導体基板
SW サイドウォールスペーサ
TP 絶縁膜(トップ絶縁膜)
Claims (7)
- 半導体基板と、
前記半導体基板上に形成された第1絶縁膜と、
前記第1絶縁膜上に形成された、電荷の保持が可能な電荷蓄積層と、
前記電荷蓄積層上に形成された第2絶縁膜と、
前記第2絶縁膜上に形成された第1ゲート電極と、
を有する不揮発性メモリセルを備える半導体装置であって、
前記電荷蓄積層は、
前記第1絶縁膜上に形成され、かつ、ハフニウムおよびシリコンを含む第3絶縁膜と、
前記第3絶縁膜上に形成され、かつ、ハフニウムおよびシリコンを含む第4絶縁膜と、
を備え、
前記第3絶縁膜のハフニウム濃度は、前記第4絶縁膜のハフニウム濃度より低く、
前記第3絶縁膜のバンドギャップは、前記第4絶縁膜のバンドギャップより大きい、半導体装置。 - 請求項1に記載の半導体装置において、
前記第4絶縁膜のハフニウム濃度は、60%未満である、半導体装置。 - 請求項1に記載の半導体装置において、
前記第3絶縁膜の比誘電率は、前記第4絶縁膜の比誘電率より低い、半導体装置。 - 請求項1に記載の半導体装置において、
前記第3絶縁膜の膜厚は、1.5~3nmである、半導体装置。 - 請求項1に記載の半導体装置において、
前記不揮発性メモリセルは、
前記半導体基板上に形成された第5絶縁膜と、
前記第5絶縁膜上に形成された第2ゲート電極と、
をさらに有し、
前記第1ゲート電極は、前記第2ゲート電極と絶縁分離されている、半導体装置。 - 請求項5に記載の半導体装置において、
前記電荷蓄積層は、前記第1ゲート電極と前記第2ゲート電極との間から、前記第1ゲート電極と前記半導体基板との間に亘って形成されている、半導体装置。 - 請求項6に記載の半導体装置において、
前記第4絶縁膜は、前記第1ゲート電極と前記第2ゲート電極との間から、前記第2ゲート電極と前記半導体基板との間に亘って形成されている、半導体装置。
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JP2020191344A JP2022080348A (ja) | 2020-11-18 | 2020-11-18 | 半導体装置 |
US17/513,404 US20220157964A1 (en) | 2020-11-18 | 2021-10-28 | Semiconductor device |
TW110140565A TW202224158A (zh) | 2020-11-18 | 2021-11-01 | 半導體裝置 |
CN202111287019.5A CN114551465A (zh) | 2020-11-18 | 2021-11-02 | 半导体器件 |
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