JP2022040090A5 - - Google Patents

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Publication number
JP2022040090A5
JP2022040090A5 JP2021138491A JP2021138491A JP2022040090A5 JP 2022040090 A5 JP2022040090 A5 JP 2022040090A5 JP 2021138491 A JP2021138491 A JP 2021138491A JP 2021138491 A JP2021138491 A JP 2021138491A JP 2022040090 A5 JP2022040090 A5 JP 2022040090A5
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JP
Japan
Prior art keywords
gas
reaction chamber
modifying
precursor
protective film
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JP2021138491A
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English (en)
Japanese (ja)
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JP7573501B2 (ja
JP2022040090A (ja
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Priority claimed from US17/005,401 external-priority patent/US11417527B2/en
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Publication of JP2022040090A publication Critical patent/JP2022040090A/ja
Publication of JP2022040090A5 publication Critical patent/JP2022040090A5/ja
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Publication of JP7573501B2 publication Critical patent/JP7573501B2/ja
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JP2021138491A 2020-08-28 2021-08-27 基板上の保護膜の膜厚を制御する方法及び装置 Active JP7573501B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/005,401 US11417527B2 (en) 2020-08-28 2020-08-28 Method and device for controlling a thickness of a protective film on a substrate
US17/005,401 2020-08-28

Publications (3)

Publication Number Publication Date
JP2022040090A JP2022040090A (ja) 2022-03-10
JP2022040090A5 true JP2022040090A5 (https=) 2024-05-17
JP7573501B2 JP7573501B2 (ja) 2024-10-25

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ID=80356967

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021138491A Active JP7573501B2 (ja) 2020-08-28 2021-08-27 基板上の保護膜の膜厚を制御する方法及び装置

Country Status (5)

Country Link
US (2) US11417527B2 (https=)
JP (1) JP7573501B2 (https=)
KR (1) KR20220029410A (https=)
CN (1) CN114121648A (https=)
TW (1) TWI899308B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240096641A1 (en) * 2022-09-20 2024-03-21 Applied Materials, Inc. In-situ carbon liner for high aspect ratio features

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0989595A3 (en) * 1998-09-18 2001-09-19 Ims-Ionen Mikrofabrikations Systeme Gmbh Device for processing a surface of a substrate
US6500357B1 (en) * 1999-12-28 2002-12-31 Applied Materials Inc. System level in-situ integrated dielectric etch process particularly useful for copper dual damascene
US20090191711A1 (en) * 2008-01-30 2009-07-30 Ying Rui Hardmask open process with enhanced cd space shrink and reduction
KR101725765B1 (ko) * 2009-09-18 2017-04-12 주성엔지니어링(주) 산화막 증착 방법 및 이를 이용한 비아 콘택 형성 방법
JP5616737B2 (ja) * 2009-11-20 2014-10-29 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理装置
KR20140143151A (ko) * 2012-03-15 2014-12-15 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
US8946076B2 (en) * 2013-03-15 2015-02-03 Micron Technology, Inc. Methods of fabricating integrated structures, and methods of forming vertically-stacked memory cells
US9054050B2 (en) * 2013-11-06 2015-06-09 Tokyo Electron Limited Method for deep silicon etching using gas pulsing
US9887097B2 (en) 2014-12-04 2018-02-06 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US9997373B2 (en) 2014-12-04 2018-06-12 Lam Research Corporation Technique to deposit sidewall passivation for high aspect ratio cylinder etch
US10170324B2 (en) * 2014-12-04 2019-01-01 Lam Research Corporation Technique to tune sidewall passivation deposition conformality for high aspect ratio cylinder etch
JP6759004B2 (ja) * 2016-08-29 2020-09-23 東京エレクトロン株式会社 被処理体を処理する方法
KR102659567B1 (ko) * 2017-03-03 2024-04-19 램 리써치 코포레이션 고종횡비 실린더 에칭을 위해 측벽 패시베이션 증착 컨포멀성을 튜닝하는 기법
JP6929209B2 (ja) * 2017-12-04 2021-09-01 東京エレクトロン株式会社 シリコン窒化膜の成膜方法及び成膜装置
US10843618B2 (en) * 2017-12-28 2020-11-24 Lam Research Corporation Conformality modulation of metal oxide films using chemical inhibition
CN110534402B (zh) * 2018-05-24 2022-06-14 北京北方华创微电子装备有限公司 复合介质层的刻蚀方法以及复合介质层
JP7257883B2 (ja) * 2018-07-25 2023-04-14 東京エレクトロン株式会社 プラズマ処理方法およびプラズマ処理装置
JP7079686B2 (ja) * 2018-07-27 2022-06-02 東京エレクトロン株式会社 成膜方法及び成膜装置
CN112640064A (zh) * 2018-08-24 2021-04-09 朗姆研究公司 用于高深宽比蚀刻的含金属钝化
JP7422557B2 (ja) * 2019-02-28 2024-01-26 東京エレクトロン株式会社 基板処理方法および基板処理装置

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